“SUPER SOT” SOT23 PNP SILICON
POWER DARLINGTON TRANSISTOR
ISSUE 1 – AUGUST 1997
FEATURES
*625mW POWER DISSIPATION
* Very High hFE at High Current (5A)
* Extremely Low VCE(sat) at High Current (1A)
COMPLEMENTARY TYPE – FMMT634
PARTMARKING DETAIL – 734
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -12 V
Peak Pulse Current ICM -5 A
Continuous Collector Current IC-800 mA
Power Dissipation Ptot 625 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
C
B
E
SOT23
FMMT734
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V(BR)CBO -100 -130 V IC=-100µA
Collector-Emitter
Breakdown Voltage V(BR)CEO -100 -116 V IC=-5mA*
Emitter-Base
Breakdown Voltage V(BR)EBO -12 -17 V IE=-100µA
Collector Cut-Off
Current ICBO -10 nA VCB=-80V
Emitter Cut-Off
Current IEBO -10 nA VEB=-7V
Collector Emitter
Cut-Off Current ICES -200 nA VCES=-80V
Collector-Emitter
Saturation Voltage VCE(sat) -0.68
-0.72
-0.78
-0.86
-0.72
-0.90
-0.75
-0.80
-0.86
-0.97
—
-1.05
V
V
V
V
V
V
IC=-100mA, IB=-1mA*
IC=-250mA,IB=-1mA*
IC=-500mA, IB=-5mA*
IC=-800mA, IB=-5mA*
IC=-800mA, IB=-5mA †*
IC=-1A, IB=-5mA*
Base-Emitter
Saturation Voltage VBE(sat) -1.60 -1.75 V IC=-1A, IB=-5mA*
Base-Emitter
Turn-On Voltage VBE(on) -1.30 -1.75 V IC=-1A, VCE=-5V*
Static Forward
Current Transfer
Ratio
hFE 20K
15K
5K
60K
60K
50K
15K
150
20K
IC=-10mA, VCE
=-5V*
IC=-100mA, VCE
=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
IC=-5A, VCE=-5V*
IC=-1A, VCE=-2V*
Transition
Frequency fT140 MHz IC=-10mA, VCE
=-10V
f=100MHz
Output Capacitance Cobo 14 25 pF VCB=-10V, f=1MHz
Turn-On Time t(on) 460 ns IC=-500mA, VCC=-20V
IB=±1mA
Turn-Off Time t(off) 1200 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
† Tamb
=150°C
FMMT734
VCE(sat) -(V)
10A1A10mA 100mA
1mA
-55°C
+25°C
+100°C
IC/IB=500
VCE(sat) v IC
IC-Collector Current
IC-Collector Current
VBE(sat) v IC
VBE(sat) - (V)
0
100mA10mA
0.4
0.8
1.2
10A
1A
hFE VIC
IC-Collector Current
1mA 100mA10mA 10A1A
hFE - Typical Gain
0
50K
100K
10mA
1mA
IC-Collector Current
VBE(on) v IC
100mA 1A 10A
VBE(on) - (V)
0.8
1.2
0.4
0
IC-Collector Current
VCE(sat) v IC
VCE(sat) -(V)
1mA
0100mA10mA
+25°C
0.4
0.8
IC/IB=100
10A1A
0.8
+100°C
-55°C
+25°C
+100°C
-55°C
+25°C
-55°C
+25°C
+100°C
IC/IB=500
VCE=5V
VCE=5V
IC-Collector Current (A)
10
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
0.1V 10V 100V
1s
DC
100ms
10ms
100us
1ms
1V
0
0.4
1mA
0.01
1.2
1.6
IC/IB=500
IC/IB=1000
IC/IB=5000
1.2
1.6
150K
1.6
2.0
1.6
2.0
0.001
TYPICAL CHARACTERISTICS
FMMT734
