DSS4240T 40V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data * * * * * * * * NEW PRODUCT Ideal for Medium Power Amplification and Switching Ultra Low Collector-Emitter Saturation Voltage Complimentary NPN Type Available (DSS5240T) "Lead-Free", RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability * * * Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish -- Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) SOT23 Top view Top View Pin Configuration Device symbol Ordering Information (Note 3) Product DSS4240T-7 Notes: Marking ZN2 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposefully added lead. 2. Diodes Inc`s "Green" Policy can be found on our website at https://www.diodes.com/ 3. Devices with lot number starting from PID0155145 (March 2010) are "Green" products. ZN2 Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 DSS4240T Document number: DS31623 Rev. 4 - 2 Mar 3 YM Marking Information 2012 Z Apr 4 ZN2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) 2013 A May 5 Jun 6 1 of 5 www.diodes.com 2014 B Jul 7 2015 C Aug 8 Sep 9 2016 D Oct O 2017 E Nov N Dec D November 2011 (c) Diodes Incorporated DSS4240T NEW PRODUCT Maximum Ratings @TA = 25C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Collector Current Continuous Collector Current Peak Base Current Symbol VCBO VCEO VEBO ICM IC IBM Value 40 40 5 3 2 0.3 Unit V V V A A A Symbol PD RJA RJC TJ, TSTG Value 600 209 74.95 -55 to +150 Unit mW C/W C/W C Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Air (Note 4) Thermal Resistance, Junction to Lead (Note 5) Operating and Storage Temperature Range Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO 40 40 5 100 50 100 V V V nA A nA 30 60 70 100 180 180 320 200 1.1 0.75 m V V Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 6) IEBO Collector-Emitter Saturation Voltage VCE(sat) Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS RCE(sat) VBE(sat) VBE(on) 350 300 300 150 Transition Frequency fT 100 MHz Output Capacitance Cob 20 pF DC Current Gain Notes: hFE mV Test Conditions IC = 100A IC = 10mA IE = 100A VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = 150C VEB = 4V, IC = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A VCE = 2V, IC = 2A IC = 100mA, IB = 1mA IC = 500mA, IB = 50mA IC = 750mA, IB = 15mA IC = 1A, IB = 50mA IC = 2A, IB = 200mA IC = 500mA, IB = 50mA IC = 2A, IB = 200mA VCE = 2V, IC = 100mA VCE = 10V, IC = 100mA, f = 100MHz VCB = 10V, f = 1MHz 4. Device mounted on FR-4 PCB with minimum recommended pad layout. 5. Thermal resistance from junction to solder-point (at the end of the collector lead). 6. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. DSS4240T Document number: DS31623 Rev. 4 - 2 2 of 5 www.diodes.com November 2011 (c) Diodes Incorporated 2.0 700 1.8 IB = 5mA 1.6 IB = 4mA IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) 800 600 500 400 300 200 1.4 IB = 3mA 1.2 1.0 IB = 2mA 0.8 0.6 IB = 1mA 0.4 RJA = 209C/W 100 0.2 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4) 0 1,000 1 0 TA = 150C 2 4 6 8 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage IC/IB = 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) T A = 85C hFE, DC CURRENT GAIN T A = 25C T A = -55C 100 0.1 TA = 150C TA = 85C TA = 25C TA = -55C 0.01 VCE = 2V 10 0.001 0.001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 3 Typical DC Current Gain vs. Collector Current 1.2 VCE = 2V 1.0 0.8 TA = -55C 0.6 TA = 25C 0.4 0.2 TA = 85C T A = 150C 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current DSS4240T Document number: DS31623 Rev. 4 - 2 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) NEW PRODUCT DSS4240T 3 of 5 www.diodes.com 1.2 IC/IB = 10 1.0 0.8 T A = -55C 0.6 TA = 25C 0.4 TA = 85C TA = 150C 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current November 2011 (c) Diodes Incorporated DSS4240T 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 CAPACITANCE (pF) NEW PRODUCT f = 1MHz 100 Cibo 10 Cobo 1 100 10 VCE = 10V f = 100MHz 1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Y Z C X DSS4240T Document number: DS31623 Rev. 4 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E E 4 of 5 www.diodes.com November 2011 (c) Diodes Incorporated DSS4240T IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2011, Diodes Incorporated www.diodes.com DSS4240T Document number: DS31623 Rev. 4 - 2 5 of 5 www.diodes.com November 2011 (c) Diodes Incorporated