DSS4240T
Document number: DS31623 Rev. 4 - 2 1 of 5
www.diodes.com November 2011
© Diodes Incorporated
DSS4240T
NEW PRODUCT
40V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR
Features
• Ideal for Medium Power Amplification and Switching
• Ultra Low Collector-Emitter Saturation Voltage
• Complimentary NPN Type Available (DSS5240T)
• “Lead-Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, "Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS4240T-7 ZN2 7 8 3,000
Notes: 1. No purposefully added lead.
2. Diodes Inc‘s “Green” Policy can be found on our website at https://www.diodes.com/
3. Devices with lot number starting from PID0155145 (March 2010) are “Green” products.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Device symbol Top View
Pin Configuration
Top view
ZN2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
ZN2
YM
DSS4240T
Document number: DS31623 Rev. 4 - 2 2 of 5
www.diodes.com November 2011
© Diodes Incorporated
DSS4240T
NEW PRODUCT
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 5 V
Peak Pulse Collector Current ICM 3 A
Continuous Collector Current IC 2 A
Peak Base Current IBM 0.3 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 600 mW
Thermal Resistance, Junction to Ambient Air (Note 4) R
θ
JA 209 °C/W
Thermal Resistance, Junction to Lead (Note 5) R
θ
JC 74.95 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO 40 ⎯ ⎯ V IC = 100μA
Collector-Emitter Breakdown Voltage (Note 6) BVCEO 40 ⎯ ⎯ V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 5 ⎯ ⎯ V IE = 100μA
Collector-Base Cutoff Current ICBO ⎯ ⎯ 100 nA VCB = 30V, IE = 0
⎯ ⎯ 50 μA VCB = 30V, IE = 0, TA = 150°C
Emitter-Base Cutoff Current IEBO ⎯ ⎯ 100 nA
VEB = 4V, IC = 0
ON CHARACTERISTICS (Note 6)
DC Current Gain hFE
350 ⎯ ⎯
⎯
VCE = 2V, IC = 0.1A
300 ⎯ ⎯ V
CE = 2V, IC = 0.5A
300 ⎯ ⎯ V
CE = 2V, IC = 1A
150 ⎯ ⎯ V
CE = 2V, IC = 2A
Collector-Emitter Saturation Voltage VCE(sat)
⎯ ⎯ 70
mV
IC = 100mA, IB = 1mA
⎯ 30 100 IC = 500mA, IB = 50mA
⎯ ⎯ 180 IC = 750mA, IB = 15mA
⎯ ⎯ 180 IC = 1A, IB = 50mA
⎯ ⎯ 320 IC = 2A, IB = 200mA
Equivalent On-Resistance RCE
(
sat
)
⎯ 60 200
mΩ IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE
(
sat
)
⎯ ⎯ 1.1 V
IC = 2A, IB = 200mA
Base-Emitter Turn-on Voltage VBE
(
on
)
⎯ ⎯ 0.75 V
VCE = 2V, IC = 100mA
SMALL SIGNAL CHARACTERISTICS
Transition Frequency fT 100 ⎯ ⎯ MHz VCE = 10V, IC = 100mA,
f = 100MHz
Output Capacitance Cob ⎯ ⎯ 20 pF
VCB = 10V, f = 1MHz
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
5. Thermal resistance from junctio n to solder-point (at the end of the collector lead).
6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
DSS4240T
Document number: DS31623 Rev. 4 - 2 3 of 5
www.diodes.com November 2011
© Diodes Incorporated
DSS4240T
NEW PRODUCT
00
P , POWER D ISSI PATI ON (m W )
D
T , AMBIENT TEMPERATURE ( C)
A
°
R = 209°C/W
θ
JA
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4)
100
200
300
400
500
25 50 75 100 125 150
600
700
800
02 46810
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Vo ltage
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2.0
I,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
1.8
I = 1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 3 Typical DC Current Gain vs. Collector Current
10
100
1,000
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 2V
CE
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Col lector Cu r re nt
0.001
0.01
0.1
1
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SAT URATION
CE(SAT)
VOLT AGE (V)
I/I = 10
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 5 T ypical Base-Emitter T u rn-On Voltage
vs. Col lector Cur re nt
0
0.2
0.4
0.6
0.8
1.0
1.
2
V , BASE-EMI
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 2V
CE
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 6 Typical Base-Emitter Saturation V o lt age
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.2
V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N V
O
L
T
A
G
E (V)
BE(SAT)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I = 10
CB
/I
DSS4240T
Document number: DS31623 Rev. 4 - 2 4 of 5
www.diodes.com November 2011
© Diodes Incorporated
DSS4240T
NEW PRODUCT
0.1 1 10 100
V , REVERSE VOLT AGE (V)
R
Fig. 7 Typi cal Capa citance Char acterist ics
1
10
100
1,000
C
A
P
A
C
I
T
AN
C
E (p
F
)
C
ibo
C
obo
f = 1MHz
0102030405060708090100
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Ty pical Gain-Bandwidth Product
vs. Col lector Cur re nt
1
10
100
1,000
f,
G
AIN-BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 10V
f = 100MHz
CE
Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
DSS4240T
Document number: DS31623 Rev. 4 - 2 5 of 5
www.diodes.com November 2011
© Diodes Incorporated
DSS4240T
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
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