FW905 Ordering number : EN8754 N-Channel and P-Channel Silicon MOSFETs FW905 General-Purpose Switching Device Applications Features * * Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 2.5V supply voltage contained in a single package. High-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Symbol Conditions N-channel VDSS VGSS ID IDP Allowable Power Dissipation PD Total Dissipation PT Duty cycle1% Mounted on a ceramic board (1500mm20.8mm)1unit, PW10s Mounted on a ceramic board (1500mm20.8mm), PW10s P-channel Unit 20 --20 V 10 10 V 7 --6 A 52 --52 A 2.3 W 2.5 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS ID=1mA, VGS=0V 20 V VDS=20V, VGS=0V IGSS VGS(off) VGS=8V, VDS=0V VDS=10V, ID=1mA yfs RDS(on)1 VDS=10V, ID=7A 0.5 9 1 A 10 A 1.3 15 V S ID=7A, VGS=4V 18 24 m RDS(on)2 Ciss ID=3A, VGS=2.5V 20 33 m VDS=10V, f=1MHz 1530 pF Output Capacitance Coss VDS=10V, f=1MHz 230 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 215 pF Static Drain-to-Source On-State Resistance Input Capacitance Marking : W905 (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Continued on next page. www.onsemi.com Rev.0 I Page 1 of 6 I www.onsemi.com Publication Order Number: FW905/D FW905 Continued from preceding page. Parameter Symbol Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Ratings Conditions min typ Unit max td(on) tr See specified Test Circuit. 19 ns See specified Test Circuit. 225 ns td(off) tf See specified Test Circuit. 125 ns See specified Test Circuit. 125 ns Qg VDS=10V, VGS=4V, ID=7A VDS=10V, VGS=4V, ID=7A 18.5 nC 3.4 nC VDS=10V, VGS=4V, ID=7A IS=7A, VGS=0V 4.8 Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD 0.79 nC 1.2 V --1 A 10 A --1.4 V [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current ID=--1mA, VGS=0V VDS=--20V, VGS=0V --20 V VGS(off) yfs VGS=8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--6A RDS(on)1 RDS(on)2 ID=--6A, VGS=--4V ID=--3A, VGS=--2.5V 30 40 m 42 59 m Input Capacitance Ciss 1720 pF Output Capacitance Coss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 260 pF VDS=--10V, f=1MHz See specified Test Circuit. 245 pF 19 ns See specified Test Circuit. 390 ns ns Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD 7.8 110 145 ns VDS=--10V, VGS=--4V, ID=--6A VDS=--10V, VGS=--4V, ID=--6A 18.4 nC 3.2 nC VDS=--10V, VGS=--4V, ID=--6A IS=--6A, VGS=0V 5.2 --0.82 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 Top view 0.3 4.4 6.0 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.1 1.27 1.5 1.8 MAX 0.43 0.595 nC --1.2 Electrical Connection 4 5.0 S See specified Test Circuit. 5 1 13 See specified Test Circuit. Package Dimensions unit : mm 7005-003 8 --0.4 SANYO : SOP8 Rev.0 I Page 2 of 6 I www.onsemi.com V FW905 Switching Time Test Circuit [N-channel] [P-channel] VDD=10V VIN VDD= --10V VIN 4.5V 0V 0V --4V ID=5A RL=2 VIN D ID= --6A RL=1.67 VIN D VOUT PW=10s D.C.1% VOUT PW=10s D.C.1% G G FW905 3.0 VGS=1.5V 2.5 2.0 1.5 1.0 --4 --2 . --1.5V V 4.5V 3.5 [Pch] --5.0 Drain Current, ID -- A --5 V --6 2.5V 2.0 4.0 S ID -- VDS [Nch] V 3.0V 4.0V 4.5 50 0V ID -- VDS 5.0 Drain Current, ID -- A FW905 P.G S --4.0V --2.5 50 --8.0V --6.0V P.G --3 --2 --1 VGS= --1.0V 0.5 0 0 0.25 0.3 0.35 Drain-to-Source Voltage, VDS -- V ID -- VGS 0 [Nch] --6 Drain Current, ID -- A 6 25 C 2 --25C 4 1 --0.3 --0.4 --0.6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Gate-to-Source Voltage, VGS -- V 1.6 1.8 --0.8 --0.9 --1.0 IT09896 [Pch] --5 --4 --3 --2 0 0 --0.7 VDS= --10V --1 0 --0.5 ID -- VGS --8 --7 5 --0.2 Drain-to-Source Voltage, VDS -- V 7 3 --0.1 IT05892 VDS=10V Ta=7 5C Drain Current, ID -- A 8 0.4 --25 C 0.2 C 0.15 25 0.1 75 C 0.05 Ta = 0 0 --0.2 IT05893 Rev.0 I Page 3 of 6 I www.onsemi.com --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Gate-to-Source Voltage, VGS -- V --1.8 --2.0 IT09897 FW905 RDS(on) -- VGS [Nch] Ta=25C 45 40 35 30 6A 25 ID=3A 15 10 5 2 4 10 IT05894 RDS(on) -- Ta [Nch] 40 35 30 25 I D=3 20 =2.5V A, VGS =4.0V 6A, V GS I D= 15 10 5 --25 0 25 50 75 100 125 150 IT09899 yfs -- ID [Nch] VDS=10V 10 7 25 5 C 25 3 = Ta 2 C -- 75 C 1.0 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 10 7 5 IS -- VSD 40 30 20 10 --1 --2 --3 --4 --5 --6 --7 --8 IT09898 RDS(on) -- Ta [Pch] 80 70 60 V --2.5 S= VG , --3A I D= V = --4.0 , V GS A 6 -I D= 50 40 30 20 10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT09900 yfs -- ID [Pch] 3 VDS= --10V 2 10 7 C 25 5 3 2 = Ta 5 --2 C C 75 1.0 7 5 3 2 0.1 --0.01 5 7 10 IT05896 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A [Nch] IS -- VSD --10 7 5 VGS=0V 3 5 7 --10 IT09901 [Pch] VGS=0V 3 3 2 25 C --2 5C Ta = 75 C 1.0 7 5 Source Current, IS -- A 3 2 0.1 7 5 3 2 0.01 0.4 ID= --3A 90 175 Ambient Temperature, Ta -- C 50 2 --1.0 7 5 3 2 --0.1 7 5 --25 C 2 --50 --6A 60 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- m 45 0 --75 Source Current, IS -- A 12 Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- m 8 Gate-to-Source Voltage, VGS -- V 50 Forward Transfer Admittance, yfs -- S 6 70 25C 0 Ta=25C 80 0 --0 0 [Pch] 90 Ta= 75C 20 RDS(on) -- VGS 100 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 50 --0.5 --0.6 --0.7 3 2 0.5 0.6 0.7 0.8 0.9 Diode Forward Voltage, VSD -- V 1.0 --0.01 --0.3 IT05897 Rev.0 I Page 4 of 6 I www.onsemi.com --0.4 --0.8 --0.9 Diode Forward Voltage, VSD -- V --1.0 --1.1 IT09902 FW905 SW Time -- ID 1000 [Nch] VDD=10V VGS=4.5V 5 3 td(off) 2 tf 100 7 5 tr 3 td(on) 2 10 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 5 3 td(off) 2 tf 100 7 tr 5 3 td(on) 2 10 --0.01 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT09903 Drain Current, ID -- A IT05898 Ciss, Coss, Crss -- VDS 7 [Pch] VDD= --10V VGS= --4V 7 Switching Time, SW Time -- ns Switching Time, SW Time -- ns 7 SW Time -- ID 1000 [Nch] f=1MHz Ciss, Coss, Crss -- VDS 5 [Pch] f=1MHz 5 3 2 Ciss 1000 7 5 3 1000 7 5 2 100 100 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V IT05899 VGS -- Qg [Nch] VDS=10V ID=7A 3.5 0 --4.0 Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V 4.0 3.0 2.5 2.0 1.5 1.0 0.5 0 15 --10 --15 --20 IT09904 VGS -- Qg [Pch] VDS= --10V ID= --6A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 20 Total Gate Charge, Qg -- nC IT09905 ASO [Nch] 10s IDP=52A 1m DC 10 op era Operation in this area is limited by RDS(on). s tio n( Ta = 25 C ) Ta=25C Single pulse Mounted on a ceramic board (1500mm20.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 0 --100 7 5 3 2 s 10 ms 10 0m s ID=7A 1.0 7 5 3 2 0.1 7 5 3 2 10 Drain Current, ID -- A Drain Current, ID -- A 10 7 5 3 2 --5 Drain-to-Source Voltage, VDS -- V 0 5 0 100 7 5 3 2 Coss Crss 3 Coss Crss 2 Ciss 2 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 3 2 3 --10 7 5 3 2 2 6 8 10 12 14 16 18 20 Total Gate Charge, Qg -- nC IT09906 ASO [Pch] 10s IDP= --52A 1m DC s 10 ms 10 0m s ID= --6A 10 op era --1.0 7 5 3 2 --0.1 7 5 3 2 4 s tio Operation in this area is limited by RDS(on). n( Ta = 25 C ) Ta=25C Single pulse Mounted on a ceramic board (1500mm20.8mm) 1unit --0.01 --0.01 2 IT09907 Rev.0 I Page 5 of 6 I www.onsemi.com 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT09908 Drain-to-Source Voltage, VDS -- V FW905 PD -- Ta Allowable Power Dissipation, PD -- W 2.0 M 1.7 1.6 ou nt ed on ac 1.2 er am ic bo 0.8 ar d (1 50 [Nch, Pch] 0m 0.4 m2 0. 8m m )1 un it 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 IT09909 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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