6.42
2
IDT71028 CMOS Static RAM
1 Meg (256K x 4-Bit) Commercial and Industrial Temperature Ranges
VCC Supply Volt age 4.5 5.0 5.5 V
GND Ground 0 0 0 V
VIH Input High Voltage 2.2 ____ VCC+0.5 V
VIL Input Low Voltage –0. 5(1) ____ 0.8 V
2966 tbl 04
Recommended DC Operating
Conditions
Absolute Maximum Ratings(1)
Pin Configuration
Capacitance
(TA = +25°C, f = 1.0MHz, SOJ package)
SOJ
Top View
Truth Table(1,2)
5
6
7
8
9
12
13
14
GND
A0
A1
A2
1
2
3
4
28
27
26
25
24
23
22
21
20
17
16
15
SO28-6
A3
A4
A5
A7
A17
A16
A15
A14
NC
A13
OE
WE
I/O0
2966 drw 02
A810 19
A12
A911 18
A11
A10
VCC
A6
CS I/O1
I/O2
I/O3NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. VTERM must not exceed VCC + 0.5V.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
NOTE:
1. VIL (min.) = –1.5V for pulse width less than 10ns, once per cycle.
NOTES:
1. H = VIH, L = VIL, x = Don't care.
2. VLC = 0.2V, VHC = VCC -0.2V.
3. Other inputs ≥VHC or ≤VLC.
CS OE WE
LLHDATA
Read D at a
LXLDATA
Write Dat a
L H H High-Z Output D isabled
H X X High-Z Deselect ed – S tandby (I
)
V
(3) X X High-Z Deselect ed – S tandby (I
)
V
(2) Term in al Voltage wit h Respect to GND –0.5 to + 7.0 V
T
Operating Tem perature 0 to +70 oC
T
Tem perature Under Bias –55 to +125 oC
T
Sto rage Tem perat ure –55 to +125 oC
P
Pow er Dissipation 1.25 W
I
DC Output Current 50 m A
2966 tbl 02
C
Input Capacitance V
= 3dV 8 pF
C
I/O C apacitance V
= 3dV 8 pF
Recommended Operating
Temperature and Supply Voltage
O
O
O
O
2966 t bl 05