PD - 95071A IRFR3708PbF IRFU3708PbF SMPS MOSFET HEXFET(R) Power MOSFET Applications l l l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use VDSS RDS(on) max ID 30V 12.5m 61A High Frequency Buck Converters for Computer Processor Power Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3708 I-Pak IRFU3708 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. Units 30 12 61 51 244 87 61 0.58 -55 to + 175 V V A W W W/C C Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. Max. Units --- --- --- 1.73 50 110 C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes through are on page 9 www.irf.com 1 12/13/04 IRFR/U3708PbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- --- Gate Threshold Voltage 0.6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.028 8.5 10.0 15.0 --- --- --- --- --- Max. Units --- V --- V/C 12.5 14.0 m 30.0 2.0 V 20 A 100 200 nA -200 Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A VGS = 2.8V, ID = 7.5A VDS = VGS, ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 12V VGS = -12V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 49 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 24 6.7 5.8 14 7.2 50 17.6 3.7 2417 707 52 Max. Units Conditions --- S VDS = 15V, ID = 50A --- ID = 24.8A --- nC VDS = 15V --- VGS = 4.5V 21 VGS = 0V, ID = 24.8A, VDS = 15V --- VDD = 15V --- ID = 24.8A ns --- RG = 0.6 --- VGS = 4.5V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. Max. Units --- --- 213 62 mJ A Diode Characteristics Symbol IS ISM VSD trr Qrr trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units --- --- 61 --- --- 244 --- 0.88 --- 0.80 --- 41 --- 64 --- 43 --- 70 1.3 --- 62 96 65 105 A V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = 31A, VGS = 0V TJ = 125C, IS = 31A, VGS = 0V TJ = 25C, IF = 31A, VR=20V di/dt = 100A/s TJ = 125C, IF = 31A, VR=20V di/dt = 100A/s www.irf.com IRFR/U3708PbF 1000 VGS TOP 10.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 2.7V 10 VGS 10.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 100 2.7V 10 20s PULSE WIDTH Tj = 175C 20s PULSE WIDTH Tj = 25C 1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 TJ = 25 C TJ = 175 C V DS = 15V 20s PULSE WIDTH 10 2.0 3.0 4.0 5.0 6.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 100 1 VDS, Drain-to-Source Voltage (V) ID = 61A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR/U3708PbF 3500 10 2800 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) Ciss 2100 1400 Coss 700 Crss 0 1 10 ID = 24.8A 8 6 4 2 0 100 0 VDS , Drain-to-Source Voltage (V) 20 30 40 50 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 C 100 ID , Drain Current (A) ISD , Reverse Drain Current (A) 10 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage TJ = 25 C 10 10us 100 100us 1ms 10 1 10ms 0.1 0.2 TC = 25 C TJ = 175 C Single Pulse V GS = 0 V 0.8 1.4 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 15V 2.6 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR/U3708PbF RD VDS 70 LIMITED BY PACKAGE VGS 60 D.U.T. ID , Drain Current (A) RG + -VDD 50 10V 40 Pulse Width 1 s Duty Factor 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 90% 10 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 0.025 ( RDS(on), Drain-to -Source On Resistance) RDS ( on ) , Drain-to-Source On Resistance ( ) IRFR/U3708PbF 0.020 0.015 VGS = 4.5V 0.010 VGS = 10V 0.005 0 50 100 150 200 250 0.017 0.015 0.013 0.011 ID = 31A 0.009 0.007 2.0 300 ID , Drain Current ( A ) 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS QGS .3F D.U.T. + V - DS QGD 600 VG EAS , Single Pulse Avalanche Energy (mJ) 50K .2F 12V VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V tp I AS DRIVER + - VDD 0.01 Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 A ID 10A 20.7A BOTTOM 24.8A TOP 480 360 240 120 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRFR/U3708PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASSEMBLY LINE "A" PART NUMBER INTERNATIONAL RECTIFIER LOGO Note: "P" in assembly line position indicates "Lead-Free" IRFU120 12 916A 34 ASSEMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFU120 12 ASSEMBLY LOT CODE www.irf.com 34 DATE CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = ASSEMBLY SIT E CODE 7 IRFR/U3708PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRF U120 WIT H ASS EMBLY LOT CODE 5678 ASS EMB LED ON WW 19, 1999 IN T HE AS SEMBLY LINE "A" INT ERNAT IONAL RE CT IF IER LOGO PART NUMBER IRFU120 919A 56 78 AS SEMBLY LOT CODE Note: "P" in as s embly line pos ition indicates "Lead-Free" DAT E CODE YE AR 9 = 1999 WE EK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMB ER IRFU120 56 AS S EMBLY LOT CODE 8 78 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS SEMBLY SIT E CODE www.irf.com IRFR/U3708PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.7 mH RG = 25, IAS = 24.8 A. Pulse width 300s; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information12/04 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/