12/13/04
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SMPS MOSFET
HEXFET® Power MOSFET
VDSS RDS(on) max ID
30V 12.5mΩ61A
Notes through are on page 9
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 30 V
VGS Gate-to-Source Voltage ± 12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 61
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 51 A
IDM Pulsed Drain Current244
PD @TA = 25°C Maximum Power Dissipation87 W
PD @TA = 70°C Maximum Power Dissipation61 W
Linear Derating Factor 0.58 W/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.73
RθJA Junction-to-Ambient (PCB mount)* –– – 50 °C/W
RθJA Junction-to-Ambient ––– 110
Thermal Resistance
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
D-Pak I-Pak
IRFR3708 IRFU3708
lHigh Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
Benefits
Applications
lUltra-Low Gate Impedance
lVery Low RDS(on) at 4.5V VGS
lFully Characterized Avalanche Voltage
and Current
l High Frequency Buck Converters for
Computer Processor Power
PD - 95071A
lLead-Free
IRFR3708PbF
IRFU3708PbF
IRFR/U3708PbF
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Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 213 mJ
IAR Avalanche Current––– 62 A
Avalanche Characteristics
S
D
G
Diode Characteristics
61
244
A
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 49 ––– ––– S VDS = 15V, ID = 50A
QgTotal Gate Charge –– – 24 –– – I D = 24.8A
Qgs Gate-to-Source Charge ––– 6.7 ––– nC VDS = 15V
Qgd Gate-to-Drain ("Miller") Charge ––– 5.8 ––– VGS = 4.5V
Qoss Output Gate Charge ––– 14 21 VGS = 0V, ID = 24.8A, VDS = 15V
td(on) Turn-On Delay Time – –– 7.2 ––– VDD = 15V
trRise Time ––– 50 ––– ID = 24.8A
td(off) Turn-Off Delay Time ––– 17.6 ––– RG = 0.6Ω
tfFall Time ––– 3.7 ––– VGS = 4.5V
Ciss Input Capacitance ––– 2417 ––– VGS = 0V
Coss Output Capacitance ––– 707 ––– VDS = 15V
Crss Reverse Transfer Capacitance ––– 52 – –– pF ƒ = 1.0MHz
VSD Diode Forward Voltage
Symbol Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
––– 0.88 1.3 V TJ = 25°C, IS = 31A, VGS = 0V
––– 0.80 ––– TJ = 125°C, IS = 31A, VGS = 0V
trr Reverse Recovery Time ––– 41 62 ns TJ = 25°C, IF = 31A, VR=20V
Qrr Reverse Recovery Charge ––– 64 96 nC di/dt = 100A/µs
trr Reverse Recovery Time ––– 43 65 ns TJ = 125°C, IF = 31A, VR=20V
Qrr Reverse Recovery Charge ––– 70 105 nC di/dt = 100A/µs
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
––– 8.5 12.5 VGS = 10V, ID = 15A
––– 10.0 14.0 mΩVGS = 4.5V, ID = 12A
––– 15.0 30.0 VGS = 2.8V, ID = 7.5A
VGS(th) Gate Threshold Voltage 0.6 ––– 2.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 24V, VGS = 0V
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -12V
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
0.1 110 100
VDS, Drai n-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
2.7V
20µs PU LSE WIDTH
Tj = 175° C
VGS
TOP 10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
0.1 110 100
VDS, Drai n-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
2.7V
20µs PU LSE WIDTH
Tj = 25° C
VGS
TOP 10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
10
100
1000
2.0 3.0 4.0 5.0 6.0
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
61A
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage Fig 8. Maximum Safe Operating Area
1 10 100
0
700
1400
2100
2800
3500
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
010 20 30 40 50
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D24.8A V = 15V
DS
0.1
1
10
100
1000
0.2 0.8 1.4 2.0 2.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 175 C
= 25 C
°°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRFR/U3708PbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Du ty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Recta ngular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
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Fig 14a&b. Gate Charge Test Circuit
and Waveform
Fig 12. On-Resistance Vs. Drain Current
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
120
240
360
480
600
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
10A
20.7A
24.8A
Fig 13. On-Resistance Vs. Gate Voltage
0 50 100 150 200 250 300
ID , Drain Current ( A )
0.005
0.010
0.015
0.020
0.025
RDS ( on ) , Drain-to-Source On Resistance (
Ω )
VGS = 4.5V
VGS = 10V
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gat e -to -S ource Voltage (V)
0.007
0.009
0.011
0.013
0.015
0.017
RDS(on)
, Drain-to -Source On Resistance (
Ω)
ID = 31A
IRFR/U3708PbF
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D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
12
I N THE ASSEMBLY LINE " A"
ASSEMBLED ON WW 16, 1999
EXAMPLE: WITH ASSEMBLY
THIS IS AN IRFR120
LOT CODE 1234 YEAR 9 = 199
9
DATE CODE
WEEK 16
PART NUMBER
LOGO
INTERNATIONAL
RECTIFIER
ASSEMBLY
LOT CODE
916A
IRFU120
34
YEAR 9 = 1999
DATE CODE
OR
P = DES IGNAT ES LEAD-F REE
PRODUCT (OPTIONAL)
Note: "P" in assembly line position
indicates "Lead-Free"
12 34
WEEK 16
A = ASSE MB L Y SITE CODE
PART NUMBER
IRFU120
LINE A
LOGO
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
IRFR/U3708PbF
8www.irf.com
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
AS S E MB L Y
EXAMPLE: WITH AS S EMB LY
THIS IS AN IRFU120
YEAR 9 = 199
9
DATE CO DE
LIN E A
WE EK 19
IN THE ASS EMBLY LINE "A"
ASSEM BLED O N WW 19, 1999
LOT CODE 5678
PART NUMB ER
56
IRFU120
INTERNATIONAL
LOGO
RECTIFIER
LOT CODE
919A
78
Note: "P" in assembly line
pos ition indica tes "Lea d-Free"
OR
56 78
ASSEMBLY
LOT CODE
RECTIFIER
LOGO
INTERNATIONAL
IRFU120
PART NUMBER
WE EK 19
DATE CODE
YEAR 9 = 1999
A = AS S E MB L Y SIT E CO DE
P = DES IGNAT E S LE AD-F R EE
PROD UCT (OPTION AL)
IRFR/U3708PbF
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Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information12/04
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641
)
15.7 ( .619
)
TRR TRL
N
OTES :
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3
. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 0.7 mH
RG = 25 Ω, IAS = 24.8 A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
