TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP36 Series 125 W at 25C Case Temperature 25 A Continuous Collector Current 40 A Peak Collector Current Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) SYMBOL VALUE TIP35 80 TIP35A 100 E T E L O S B O TIP35B V CBO 120 TIP35C 140 TIP35 40 TIP35A TIP35B VCEO TIP35C UNIT 60 80 V V 100 VEBO 5 V IC 25 A ICM 40 A IB 5 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 125 W Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 3.5 W 1/2LIC2 90 mJ Tj -65 to +150 C Tstg -65 to +150 C TL 250 C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 1 W/C. Derate linearly to 150C free air temperature at the rate of 28 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) TIP35 40 TIP35A 60 TIP35B 80 TIP35C 100 TYP MAX V VCE = 80 V VBE = 0 TIP35 0.7 Collector-emitter VCE = 100 V VBE = 0 TIP35A 0.7 cut-off current VCE = 120 V VBE = 0 TIP35B 0.7 VCE = 140 V VBE = 0 TIP35C 0.7 Collector cut-off VCE = 30 V IB = 0 TIP35/35A 1 current VCE = 60 V IB = 0 TIP35B/35C 1 VEB = 5V IC = 0 Forward current VCE = 4V IC = 1.5 A transfer ratio VCE = 4V IC = 15 A Collector-emitter IB = 1.5 A IC = 15 A saturation voltage IB = 5A IC = 25 A VCE = 4V Emitter cut-off current Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio 10 50 1.8 (see Notes 5 and 6) 4 2 (see Notes 5 and 6) IC = 25 A mA 25 (see Notes 5 and 6) IC = 15 A 4V mA mA 1 E T E L O S B O VCE = UNIT VCE = 10 V IC = 1A f = 1 kHz 25 VCE = 10 V IC = 1A f = 1 MHz 3 V V 4 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN TYP MAX UNIT 1 C/W 35.7 C/W MAX UNIT resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN ton Turn-on time IC = 15 A IB(on) = 1.5 A IB(off) = -1.5 A 1.2 s toff Turn-off time VBE(off) = -4.15 V RL = 2 tp = 20 s, dc 2% 0.9 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS635AA VCE = 4 V TC = 25C tp = 300 s, duty cycle < 2% 100 10 1 0*1 1*0 TCS635AB 10 VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1*0 0*1 E T E L O S B O 10 100 IC = 300 mA IC = 1 A IC = 3 A 0*01 0*001 IC - Collector Current - A 0*01 0*1 VBE - Base-Emitter Voltage - V 100 Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1*8 10 25 A 20 A 15 A 10 A IB - Base Current - A Figure 1. 2*0 1*0 IC = IC = IC = IC = TCS635AC VCE = 4 V TC = 25C 1*6 1*4 1*2 1*0 0*8 0*6 0*1 1*0 10 100 IC - Collector Current - A Figure 3. JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS635AA tp = 300 s, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 10 1*0 0*1 TIP35 TIP35A TIP35B TIP35C E T E L O S B O 0*01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS635AA Ptot - Maximum Power Dissipation - W 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.