A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 30 mA 35 V
BVCES IC = 30 mA 65 V
BVEBO IE = 3.0 mA 4.0 V
ICBO VE = 30 V 3.0 mA
hFE VCE = 5.0 V IC = 1.5 A 20 80 ---
COB VCB = 30 V f = 1.0 MHz 30 40 pF
10
50 13.5
dB
%
PG
η
ηη
ηC
ψ
ψψ
ψ VCC = 28 V POUT = 30 W f = 150 MHz 30:1 all phase angles, no degadation in output.
NPN SILICON RF POWER TRANSISTOR
MRF314
DESCRIPTION:
The MRF314 is Designed for Class C
Power Amplifier Applications up to 200
MHz.
FEATURES:
PG = 10 dB min. at 30 W/ 150 MHz
Withstands 30:1 Load VSWR
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 3.4 A
VCBO 65 V
VCEO 35 V
VEBO 4.0 V
PDISS 82 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 2.13 °C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10872
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Advanced Semiconductor, Inc.:
MRF314