BC556 THRU BC559 Small Signal Transistors (PNP) TO-92 .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) max. .022 (0.55) .098 (2.5) FEATURES PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. These transistors are subdivided into three groups A, B and C according to their current gain. The type BC556 is available in groups A and B, however, the types BC557 and BC558 can be supplied in all three groups. The BC559 is a low-noise type available in all three groups. As complementary types, the NPN transistors BC546 ... BC549 are recommended. On special request, these transistors are also manufactured in the pin configuration TO-18. E C MECHANICAL DATA B Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Value Unit Collector-Base Voltage BC556 BC557 BC558, BC559 -VCBO -VCBO -VCBO 80 50 30 V V V Collector-Emitter Voltage BC556 BC557 BC558, BC559 -VCES -VCES -VCES 80 50 30 V V V Collector-Emitter Voltage BC556 BC557 BC558, BC559 -VCEO -VCEO -VCEO 65 45 30 V V V Emitter-Base Voltage -VEBO 5 V Collector Current -IC 100 mA Peak Collector Current -ICM 200 mA Peak Base Current -IBM 200 mA Peak Emitter Current IEM 200 mA Power Dissipation at Tamb = 25 C Ptot 5001) mW Junction Temperature Tj 150 C Storage Temperature Range TS -65 to +150 C 1) 4/98 Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. BC556 THRU BC559 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit hfe hfe hfe hie hie hie hoe hoe hoe - - - 1.6 3.2 6 - - - 220 330 600 2.7 4.5 8.7 18 30 60 - - - 4.5 8.5 15 30 60 110 - - - k k k S S S hre hre hre - - - 1.5 * 10-4 2 * 10-4 3 * 10-4 - - - - - - hFE hFE hFE - - - 90 150 270 - - - - - - hFE hFE hFE 110 200 420 180 290 500 220 450 800 hFE hFE hFE - - - 120 200 400 - - - Thermal Resistance Junction to Ambient Air RthJA - - 2501) K/W Collector Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA at -IC = 100 mA, -IB = 5 mA -VCEsat -VCEsat - - 80 250 300 650 mV mV Base Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA at -IC = 100 mA, -IB = 5 mA -VBEsat -VBEsat - - 700 900 - - mV mV Base-Emitter Voltage at -VCE = 5 V, -IC = 2 mA at -VCE = 5 V, -IC = 10 mA -VBE -VBE 600 - 660 - 750 800 mV mV Collector-Emitter Cutoff Current BC556 at -VCE = 80 V at -VCE = 50 V BC557 BC558 at -VCE = 30 V BC556 at -VCE = 80 V, Tj = 125 C at -VCE = 50 V, Tj = 125 C BC557 BC558, BC559 at -VCE = 30 V, Tj = 125 C -ICES -ICES -ICES -ICES -ICES -ICES - - - - - - 0.2 0.2 0.2 - - - 15 15 15 4 4 4 nA nA nA A A A h-Parameters at -VCE = 5 V, -IC = 2 mA, f = 1 kHz Current Gain Current Gain Group A B C Input Impedance Current Gain Group A B C Output Admittance Current Gain Group A B C Reverse Voltage Transfer Ratio Current Gain Group A B C DC Current Gain at -VCE = 5 V, -IC = 10 A Current Gain Group A B C at -VCE = 5 V, -IC = 2 mA Current Gain Group A B C at -VCE = 5 V, -IC = 100 mA Current Gain Group A B C 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. - - - - - - BC556 THRU BC559 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit Gain-Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz fT - 150 - MHz Collector-Base Capacitance at -VCB = 10V, f = 1 MHz CCBO - - 6 pF Noise Figure at -VCE = 5 V, -IC = 200 A, RG = 2 k, f = 1 kHz, f = 200 Hz BC556, BC557, BC558 BC559 F F - - 2 1 10 4 dB dB Noise Figure at -VCE = 5 V, -IC = 200 A, RG = 2 k, f = 30...15000 Hz BC559 F - 1.2 4 dB RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559 RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559 RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559 Relative h-parameters versus collector current BC556...BC559 10 2 6 he (-IC) 4 he (-IC = 2 mA) 2 hie 10 6 4 2 hre 1 6 hfe 4 2 10 -VCE = 5 V Tamb = 25 C hoe -1 10 -1 2 4 1 2 4 -IC 10 mA RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559