FEATURES
MECHAN IC AL DATA
Case: TO -92 Plasti c Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Small Signal Transistors (PNP)
B
E
C
.181 (4.6)
min. .492 (12.5) .181 (4.6)
.142 (3.6)
Dimensions in inches and (millimeters)
TO-92
Ratings at 25 °C ambient temperature unless otherwise specified
.098 (2.5)
max. .022 (0.55)
4/98
BC556 THRU BC559
Symbol Value Unit
Collector-Base Voltage BC556
BC557
BC558, BC 559
–VCBO
–VCBO
–VCBO
80
50
30
V
V
V
Collector-Emitter Voltage BC556
BC557
BC558, BC 559
–VCES
–VCES
–VCES
80
50
30
V
V
V
Collector-Emitter Voltage BC556
BC557
BC558, BC 559
–VCEO
–VCEO
–VCEO
65
45
30
V
V
V
Emitter-Base Voltage –VEBO 5V
Collector Current –IC100 mA
Peak Collector Current –ICM 200 mA
Peak Base Current –IBM 200 mA
Peak Emitter Current IEM 200 mA
Pow e r Dissipation at Tamb = 25 °C Ptot 5001) mW
Junction Temperature Tj150 °C
Storage Temperature Range TS–65 to +150 °C
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
PNP Silicon Epitaxial Planar Transistors fo r
s witching and AF amplifier applications.
These transistors are subdivided into
three groups A, B and C according to
their current gain. The type BC556 is avail-
able in groups A and B, however, the types
BC557 and BC558 can be supplied in all three
groups. The BC559 is a low-noise type available
in all three groups. As complementary types, the
NPN transistors BC54 6 BC549 ar e recom m end ed.
On special request, these transistors are also manufac-
tured in the pin configuration TO-18.
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
BC556 THRU BC559
Symbol Min. Typ. Max. Unit
h-Parameters
at –VCE = 5 V, –IC = 2 mA, f = 1 kH z
Current Gain Cu rren t Gain Grou p A
B
C
Input Impedan ce Cu rren t Gain Grou p A
B
C
Output Admittanc e Cu rren t Gain Grou p A
B
C
Reverse Voltage Transfer Ratio
Cu rren t Gain Grou p A
B
C
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
1.6
3.2
6
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10–4
2 · 10–4
3 · 10–4
4.5
8.5
15
30
60
110
k
k
k
µS
µS
µS
DC Current Gain
at –VCE = 5 V, –IC = 10 µA
Cu rren t Gain Grou p A
B
C
at –VCE = 5 V, –IC = 2 mA
Cu rren t Gain Grou p A
B
C
at –VCE = 5 V, –IC = 100 mA
Cu rren t Gain Grou p A
B
C
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
110
200
420
90
150
270
180
290
500
120
200
400
220
450
800
Thermal Resistance Junction to Ambient Air RthJA ––250
1) K/W
Collect or Sa turation Voltage
at –IC = 10 mA, –IB = 0.5 mA
at –IC = 100 mA, –IB = 5 mA –VCEsat
–VCEsat
80
250 300
650 mV
mV
Base Satur ation Voltage
at –IC = 10 mA, –IB = 0. 5 mA
at –IC = 100 mA, –IB = 5 mA –VBEsat
–VBEsat
700
900
mV
mV
Base-Emitter Voltage
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 10 mA –VBE
–VBE 600
660
750
800 mV
mV
Collector-Emitter Cutoff Current
at –VCE = 80 V BC556
at –VCE = 50 V BC557
at –VCE = 30 V BC558
at –VCE = 80 V, Tj = 125 °C BC556
at –VCE = 50 V, Tj = 125 °C BC557
at –VCE = 30 V, Tj = 125 °C BC558 , BC559
–ICES
–ICES
–ICES
–ICES
–ICES
–ICES
0.2
0.2
0.2
15
15
15
4
4
4
nA
nA
nA
µA
µA
µA
1) Valid provided that leads are kept at ambient temper at ure at a distance of 2 mm from case.
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
BC556 THRU BC559
Symbol Min. Typ. Max. Unit
Gain- Bandw id th Product
at –VCE = 5 V, –IC = 10 mA, f = 100 MHz fT 150 MHz
Collec tor -B a se Capac itanc e
at –VCB = 10V, f = 1 MHz CCBO ––6pF
Noise Figur e
at –VCE = 5 V, –IC = 200 µA, RG = 2 k,
f = 1 kHz, f = 200 Hz BC556, BC 557, BC55 8
BC559 F
F
2
110
4dB
dB
Noise Figur e
at –VCE = 5 V, –IC = 200 µA, RG = 2 k,
f = 3015000 Hz BC559 F–1.24dB
RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559
RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559
RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559
Relative h-parameters
versus collector current
10
1
10
1
-IC
10 mA
BC556...BC559
102
6
4
2
6
4
2
6
4
2
-1
10-1 24 24
h (-I = 2 mA)
eC
h (-I )
eC
hie
hoe
hre
hfe
-V = 5 V
CE
T = 25 °C
amb
RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559