SEMiX241DH16s
© by SEMIKRON Rev. 29 – 05.03.2010 1
SEMiX® 13
DH
Bridge Rectifier Module
(halfcontrolled)
SEMiX241DH16s
Features
• Terminal height 17 mm
• Chips soldered directly to isolated
substrate
Typical Applications*
• Input Bridge Rectifier for AC/DC motor
control
• Power supply
Absolute Maximum Ratings
Symbol Conditions Values Unit
Chip
IT(AV) sinus 180° Tc=85°C 240 A
Tc= 100 °C 200 A
ITSM 10 ms Tj=25°C 2250 A
Tj= 130 °C 1900 A
i2t10 ms Tj=25°C 25300 A2s
Tj= 130 °C 18000 A2s
VRSM 1700 V
VRRM 1600 V
VDRM 1600 V
(di/dt)cr Tj= 130 °C 100 A/µs
(dv/dt)cr Tj= 130 °C 1000 V/µs
Tj-40 ... 130 °C
Module
Tstg -40 ... 125 °C
Visol AC sinus 50Hz 1min 4000 V
1s 4800 V
Characteristics
Symbol Conditions min. typ. max. Unit
Chip
VTTj=25°C, I
T= 300 A 1.9 V
VT(TO) Tj= 130 °C 0.85 V
rTTj= 130 °C 4mΩ
IDD;IRD Tj= 130 °C, VDD = VDRM; VRD = VRRM 24 mA
tgd Tj=25°C, I
G=1A, di
G/dt = 1 A/µs 1µs
tgr VD = 0.67 * VDRM 2µs
tqTj= 130 °C 150 µs
IHTj=25°C 150 250 mA
ILTj=25°C, R
G=33Ω300 600 mA
VGT Tj=25°C, d.c. 3V
IGT Tj=25°C, d.c. 150 mA
VGD Tj= 130 °C, d.c. 0.25 V
IGD Tj= 130 °C, d.c. 6mA
Rth(j-c) per thyristor K/W
per module K/W
Rth(j-c) sin. 180° per thyristor 0.32 K/W
per module 0.32 K/W
Rth(j-c) per thyristor K/W
per module K/W
Module
Rth(c-s) per chip K/W
per module 0.04 K/W
Msto heat sink (M5) 3 5 Nm
Mtto terminals (M6) 2.5 5 Nm
a5 * 9,81 m/s2
w350g
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