MITSUBISHI RF POWE R MOS FET
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
RD12MVP1 MITSUBISHI ELECTRIC 1st Jun. 2006
1/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
INDEX MARK
[Gate]
1.8+/-0.1
0.7+/-0.1
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
(b)
(b)
0.95+/-0.2 2.6+/-0.2
4.2+/-0.2
5.6+/-0.2
7.0+/-0.2
(c)
0.65+/-0.2
(a)
8.0+/-0.2
6.2+/-0.2
NOTES:
1. ( ) Typical value
UNIT:mm
(d)
0.2+/-0.05
TOP VIEW SIDE VIEW BOTTOM VIEW
SIDE VIEW
(3.6)
(4.5)
Standoff = max 0.05
DETAIL A
DETAIL A
DESCRIPTION
RD12MVP1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
FEATURES
•High Power Gain
Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
•High Efficiency: 55%min. (175MHz)
•No gate protection diode
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
RoHS COMPLIANT
RD12MVP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to Source Voltage VGS=0V 60 V
VGSS Gate to Source Voltage VDS=0V -5 to +20 V
ID Drain Current 4.0 A
Pin Input Power Zg=Zl=50Ω 1.0 W
Pch Channel Dissipation Tc=25°C 125 W
Tj Junction Temperature +150
°C
Tstg Storage Temperature -40 to +125 °C
Rthj-c Thermal Resistance Junction to Case 1.5 °C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX.
IDSS Zero Gate Voltage Drain Current VDS=17V, VGS=0V - - 10 uA
IGSS Gate to Source Leak Current VGS=10V, VDS=0V - - 1.0 uA
VTH Gate Threshold Voltage VDS=12V, IDS=1mA 1.8 - 4.4 V
Pout Output Power 10 12 - W
ηD Drain Efficiency
f=175MHz,VDD=7.2V
Pin=0.5W,Idq=1.0A 55 57 - %
VSWRT Load VSWR tolerance
VDD=9.5V,Po=10W(Pin Control)
f=175MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy -
Note: Above parameters, ratings, limits and conditions are subject to change.
OUTLINE DRAWING
MITSUBISHI RF POWE R MOS FET
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
RD12MVP1 MITSUBISHI ELECTRIC 1st Jun. 2006
2/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
0
10
20
30
40
50
60
0 40 80 120 160 200
A MBIENT TEMPERATURE Ta( deg:C.)
CHANNEL DISSIPATION Pch(
W
On PCB with Ter mal sheet
and Heat-sink
(Size : 41 x 55mm, t= 7.2 mm)
*PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm)
Ther mal sheet: GELTEC COOH-4000( t= 0.5mm)
Vgs-Ids CHARACTERIS TICS
0
1
2
3
4
5
6
7
01234567
Vgs(V)
Ids(A)
Ta= + 25°C
Vds= 10V
Ids
Vds VS. Ciss CHARACTERIS TICS
0
20
40
60
80
100
120
140
160
0 5 10 15 20
Vds(V)
Ciss(pF)
Ta= + 25°C
f=1MHz
Vds VS. Coss CHARACTERIS TICS
0
20
40
60
80
100
120
140
160
0 5 10 15 20
Vds(V)
Coss(pF)
Ta=+ 25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20
Vds(V)
Crss(pF)
Ta= + 25°C
f=1MHz
Vds-Ids CHARACTERISTICS
0
1
2
3
4
5
6
7
8
9
0123456789
Vds(V)
Ids(A)
Ta=+ 25°C
Vg s= 7.5V
Vg s= 6.5V
Vg s= 5.5V
Vg s= 4.5V
MITSUBISHI RF POWE R MOS FET
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
RD12MVP1 MITSUBISHI ELECTRIC 1st Jun. 2006
3/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
0
10
20
30
40
0 5 10 15 20 25 30
Pin(dBm)
Po(dBm) , Gp(dB) , Idd(A
)
0
20
40
60
80
ηd(%)
Ta=+ 25°C
f= 175MHz
Vdd=7.2V
Idq = 1.0A
Po
ηｄ
Ｉｄｄ
Gp
Pin-Po CHARACTERISTICS @f=175MHz
0
2
4
6
8
10
12
14
0.0 0.5 1.0 1.5
Pin( W)
Pout(W) , Idd(A)
20
30
40
50
60
70
80
90
ηd(%)
Po
ηd
Idd
Ta=25°C
f=175MHz
Vdd=7.2V
Idq = 1.0A
Vdd-Po CHARACTERISTICS @f=175MHz
5
10
15
20
25
30
4681012
Vdd(V)
Po(W)
1
2
3
4
5
6
Idd(A)
Po
Idd
Ta=25°C
f=175MHz
Pin= 0.6W
Idq = 1.0A
Zg = Z I= 50 ohm
MITSUBISHI RF POWE R MOS FET
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
RD12MVP1 MITSUBISHI ELECTRIC 1st Jun. 2006
4/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TEST CIRCUIT (f=175MHz)
47pF
L2:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter)
W
W
RD12MVP1
14mm
9.5mm
24pF
100pF
330pF
RF-in
330pF
Vdd
Vgg
19mm
4.7k Ohm
3mm
9.5mm
3mm
22uF,50V
C2
C1
L1
RF-out
19mm
54pF
W:Line width=1.0mm
L1:10.8nH,4Turns,D:0.43mm,1.66mm(outside diameter)
C1,C2:2200pF
Note:Board material= glass-Epoxy Substrate
Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm
175MHz
9mm
47pF L2
17mm 3.5mm
MITSUBISHI RF POWE R MOS FET
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
RD12MVP1 MITSUBISHI ELECTRIC 1st Jun. 2006
5/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)
Freq.
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 0.782 -165.5 6.105 69.0 0.024 -16.8 0.743 -162.7
125 0.801 -166.9 4.716 62.4 0.022 -20.5 0.766 -164.0
150 0.817 -168.0 3.724 56.4 0.021 -25.7 0.783 -165.6
175 0.833 -168.8 3.023 51.6 0.019 -27.3 0.799 -166.4
200 0.847 -169.7 2.519 47.5 0.016 -31.1 0.825 -167.2
225 0.860 -170.6 2.137 43.5 0.015 -30.0 0.845 -167.7
250 0.872 -171.6 1.828 39.6 0.013 -34.0 0.864 -168.6
275 0.882 -172.4 1.569 36.0 0.012 -30.9 0.871 -169.6
300 0.894 -173.0 1.361 33.4 0.010 -31.7 0.879 -170.4
325 0.901 -173.5 1.193 31.0 0.008 -24.1 0.888 -171.3
350 0.910 -174.2 1.062 28.5 0.007 -20.9 0.901 -172.1
375 0.917 -175.2 0.947 25.9 0.006 -13.8 0.915 -172.9
400 0.918 -176.1 0.844 23.5 0.005 -1.5 0.918 -173.6
425 0.923 -176.7 0.756 21.5 0.004 16.0 0.917 -174.4
450 0.930 -177.2 0.683 20.4 0.005 35.4 0.922 -174.8
475 0.933 -177.7 0.623 18.7 0.005 43.3 0.928 -175.5
500 0.938 -178.1 0.568 17.2 0.006 53.6 0.935 -176.3
525 0.939 -178.8 0.520 15.7 0.007 58.5 0.943 -176.8
550 0.942 -179.3 0.477 14.3 0.008 63.6 0.941 -177.1
575 0.943 179.7 0.439 13.3 0.009 68.8 0.941 -177.8
600 0.946 179.5 0.407 12.2 0.011 73.9 0.945 -178.3
625 0.950 179.1 0.378 11.3 0.011 72.4 0.949 -178.9
650 0.950 178.8 0.350 10.4 0.012 74.8 0.950 -179.5
675 0.953 178.3 0.327 9.8 0.013 79.1 0.952 -179.8
700 0.952 177.9 0.306 8.9 0.014 77.0 0.954 179.8
725 0.954 177.5 0.286 8.3 0.015 77.2 0.951 179.4
750 0.955 176.9 0.268 7.7 0.016 79.2 0.955 178.9
775 0.954 176.4 0.252 7.2 0.018 78.9 0.957 178.6
800 0.955 176.3 0.238 7.0 0.018 79.9 0.958 178.1
825 0.958 175.9 0.225 6.4 0.020 78.9 0.961 177.7
850 0.958 175.6 0.213 5.9 0.021 80.1 0.954 177.5
875 0.956 175.1 0.203 5.5 0.022 79.0 0.960 177.3
900 0.958 174.5 0.192 5.3 0.023 79.6 0.958 176.8
925 0.956 174.3 0.182 5.3 0.024 79.3 0.962 176.4
950 0.958 174.0 0.175 5.3 0.025 78.3 0.964 176.0
975 0.957 173.8 0.166 5.2 0.026 80.7 0.964 176.0
1000 0.959 173.6 0.158 5.7 0.026 78.8 0.962 175.8
S11 S21 S12 S22
MITSUBISHI RF POWE R MOS FET
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
RD12MVP1 MITSUBISHI ELECTRIC 1st Jun. 2006
6/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 0.799 -169.4 5.980 72.2 0.021 -11.2 0.757 -166.6
125 0.813 -170.7 4.690 65.9 0.020 -14.9 0.780 -167.5
150 0.825 -171.3 3.726 60.1 0.019 -17.2 0.785 -168.8
175 0.835 -171.9 3.045 55.9 0.017 -21.5 0.794 -169.3
200 0.846 -172.5 2.569 52.3 0.016 -22.4 0.821 -169.3
225 0.857 -173.4 2.206 48.4 0.015 -21.1 0.846 -169.5
250 0.868 -174.3 1.904 44.3 0.013 -21.2 0.863 -170.4
275 0.877 -174.9 1.648 40.7 0.011 -21.3 0.864 -170.9
300 0.886 -175.3 1.436 38.2 0.010 -19.9 0.864 -171.4
325 0.895 -175.7 1.270 35.8 0.009 -15.8 0.876 -172.0
350 0.900 -176.4 1.141 33.1 0.008 -11.9 0.891 -172.6
375 0.907 -177.3 1.023 30.4 0.007 -7.2 0.906 -173.1
400 0.909 -178.1 0.917 27.7 0.007 1.3 0.915 -173.9
425 0.913 -178.7 0.820 25.8 0.005 20.2 0.908 -174.4
450 0.921 -179.1 0.745 24.6 0.006 27.4 0.910 -174.5
475 0.925 -179.6 0.683 23.0 0.006 36.9 0.921 -175.2
500 0.932 -180.0 0.627 21.2 0.007 50.8 0.933 -175.9
525 0.931 179.2 0.575 19.4 0.007 53.6 0.937 -176.6
550 0.933 178.6 0.529 18.1 0.008 57.3 0.935 -176.8
575 0.937 178.0 0.486 16.6 0.009 67.9 0.931 -177.0
600 0.943 177.7 0.452 16.1 0.010 70.4 0.935 -177.4
625 0.943 177.3 0.422 14.9 0.011 70.9 0.945 -178.0
650 0.946 177.0 0.391 14.0 0.013 73.8 0.948 -178.6
675 0.947 176.6 0.366 12.7 0.013 75.6 0.946 -179.0
700 0.946 175.9 0.341 12.0 0.015 76.9 0.946 -179.3
725 0.951 175.5 0.322 11.3 0.015 75.8 0.945 -179.6
750 0.949 175.0 0.302 10.5 0.016 76.4 0.949 179.9
775 0.951 174.7 0.284 9.6 0.017 77.8 0.952 179.4
800 0.950 174.5 0.269 9.3 0.019 79.0 0.955 179.0
825 0.956 174.3 0.253 9.2 0.020 77.8 0.954 178.9
850 0.956 173.7 0.240 8.7 0.020 78.7 0.950 178.9
875 0.956 173.3 0.228 7.9 0.021 78.7 0.952 178.4
900 0.953 172.8 0.218 7.1 0.023 77.3 0.953 177.9
925 0.948 172.5 0.206 6.6 0.024 76.8 0.958 177.4
950 0.955 172.2 0.196 7.0 0.024 78.3 0.959 177.3
975 0.955 172.0 0.186 7.3 0.025 78.6 0.958 177.4
1000 0.957 171.8 0.178 7.1 0.026 79.1 0.956 177.1
S11 S21 S12 S22
MITSUBISHI RF POWE R MOS FET
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
RD12MVP1 MITSUBISHI ELECTRIC 1st Jun. 2006
7/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
Warning!
