2N5322 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)75 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (oC)175o I(CBO) Max. (A)100u/ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.130 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)4.0 f(T) Min. (Hz) Transition Freq50M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) t(d) Max. (s) Delay time. t(r) Max. (s) Rise time t(on) Max. (s) On time.100n