UBA2030T_N1 - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Preliminary speciﬁcation

Supersedes data of 1997 Sep 16

File under Integrated Circuits, IC11

1999 Aug 10

INTEGRATED CIRCUITS

UBA2030T

Full bridge driver IC

1999 Aug 10 2

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

FEATURES

•Full bridge driver

•Integrated bootstrap diodes

•Integrated high voltage level shift function

•High voltage input (570 V maximum) for the internal

supply

•Adjustable ‘dead time’

•Adjustable oscillator frequency

•High voltage level shifter for the bridge enable function

•Shut-down function.

APPLICATIONS

•The UBA2030T can drive the MOSFETs in any type of

load configured as a full bridge

•The circuit is intended as a commutator for High

Intensity Discharge (HID) lamps.

GENERAL DESCRIPTION

The UBA2030T is a high voltage integrated circuit

fabricated using the BCD750 power logic process.

The circuit is designed for driving the MOSFETs in a full

bridge configuration. In addition, it features a shut-down

function,anadjustableoscillatorandaPMOShighvoltage

level shifter to control the bridge enable function.

To guarantee an accurate 50% duty factor, the oscillator

signal passes through a divider before being fed to the

output drivers.

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

UBA2030T SO24 plastic small outline package; 24 leads; body width 7.5 mm SOT137-1

1999 Aug 10 3

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

High voltage

VHV high voltage supply 0 −570 V

Start-up; powered via pin HV

Istrtu start-up current −0.7 1.0 mA

Vth(osc strt) start oscillating threshold

voltage at fbridge = 500 Hz; no load 14.0 15.5 17.0 V

Vth(osc stp) stop oscillating threshold voltage 11.5 13.0 14.5 V

Output drivers

Io(source) output source current VDD =V

FSL =V

FSR =15V;

GHR =V

GHL =V

GLR =V

GLL =0V 140 190 240 mA

Io(sink) output sink current VDD =V

FSL =V

FSR =15V;

GHR =V

GHL =V

GLR =V

GLL =15V 200 260 320 mA

Internal oscillator

fbridge bridge oscillating frequency EXO pin connected to SGND 50 −50000 Hz

External oscillator

fosc(ext) external oscillator frequency RC pin connected to SGND; 100 −100000 Hz

Dead time control

tdead dead time control range

(adjusted externally) 0.4 −4µs

Bridge enable

IIH HIGH-level input current bridge enable active 100 −700 µA

IIL LOW-level input current bridge enable not active 0 −20 µA

Shut-down

VIH HIGH-level input voltage shut-down active; 4.5 −VDD V

VIL LOW-level input voltage shut-down not active; 0 −0.5 V

fbridge fosc(ext)

-----------------

∆VSD

∆t

-------------- 5 V/ms>

∆VSD

∆t

-------------- 5 V/ms>

1999 Aug 10 4

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

BLOCK DIAGRAM

Fig.1 Block diagram.

handbook, full pagewidth

MGK590

LOW VOLTAGE

LEVEL SHIFTER

LOW VOLTAGE

SUPPLY

HIGH VOLTAGE

LEVEL SHIFTER

HIGHER LEFT

DRIVER

LOWER LEFT

DRIVER

LOWER RIGHT

DRIVER

HIGHER RIGHT

DRIVER

BRIDGE ENABLE

OSCILLATOR

LOGIC

÷ 2

24 23 5 20 22

HV BER BE

SGND VDD RC EXO DTC

4, 6, 9, 16, 17, 19

n.c.

1GLR

2PGND

3GLL

13 SHR

14 GHR

11 GHL

15 FSR

12 SHL

10 FSL

UBA2030T

1999 Aug 10 5

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

PINNING

SYMBOL PIN DESCRIPTION

GLR 1 gate of lower right MOSFET

PGND 2 power ground for sources of lower

left and right MOSFETs

GLL 3 gate of lower left MOSFET

n.c. 4 not connected

RC 5 RC input for internal oscillator

n.c. 6 not connected

BE 7 bridge enable control input

BER 8 bridge enable reference input

n.c. 9 not connected

FSL 10 ﬂoating supply voltage left output

GHL 11 gate of higher left MOSFET

SHL 12 source of higher left MOSFET

SHR 13 source of higher right MOSFET

GHR 14 gate of higher right MOSFET

FSR 15 ﬂoating supply voltage right output

n.c. 16 not connected

n.c. 17 not connected

HV 18 high voltage supply input

n.c. 19 not connected

EXO 20 external oscillator input

SD 21 shut-down input

DTC 22 ‘dead time’ control input

VDD 23 internal (low voltage) supply

SGND 24 signal ground Fig.2 Pin configuration.

handbook, halfpage

GLR

PGND

GLL

n.c.

BER

n.c.

FSL

GHL

SHL

SGND

VDD

DTC

n.c.

EXO

n.c.

FSR

GHR

SHR

UBA2030T

MGK589

1999 Aug 10 6

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

FUNCTIONAL DESCRIPTION

Supply voltage

The UBA2030T is powered by a single supply voltage

connected to the HV pin (the full bridge supply could be

used, for example). The IC generates its own low voltage

supply for driving the internal circuitry and the MOSFETs

in the full bridge, removing the need for an additional low

voltage supply. A capacitor must be connected between

the VDD pin and SGND to obtain a ripple-free internal

supply voltage.

Start-up

When the power is turned on, the UBA2030T enters a

start-up phase; the high side MOSFETs are switched off

and the low side MOSFETs switched on. During start-up,

thebootstrapcapacitorsarecharged andthebridgeoutput

current is zero.

Oscillation

Atthe pointwherethesupplyvoltageattheHV pincrosses

the ‘start oscillating threshold’, the bridge begins

commutating between the following two defined states:

Higher left and lower right MOSFETs on,

higher right and lower left MOSFETs off

Higher left and lower right MOSFETs off,

higher right and lower left MOSFETs on.

When the internal oscillator is used, the bridge

commutating frequency is determined by the values of an

external resistor and capacitor. In this mode, the EXO pin

must be connected to SGND.

When an external oscillator is used, its output must be

connected to the EXO pin; the internal oscillator must be

disabled by connecting the RC pin to SGND. The bridge

commutatingfrequency is half the oscillator frequency due

to a ÷2 circuit which guarantees an accurate 50% duty

factor.

The time between turning off the conducting pair of

MOSFETs and turning on the other pair, the ‘dead time’,

can be adjusted using an external resistor. If the supply

voltage at the HV pin falls below the ‘stop oscillating

threshold’, the UBA2030T re-enters the start-up phase.

Bridge enable

The bridge enable function allows the bridge to be held in

its current state. When active, it connects the RC pin to

SGND,disablingthe internal oscillator.Ifthebridgeenable

function is activated during ‘dead time’, the bridge is

allowed to enter the next conducting state before being

held. Oscillations resume the instant the bridge enable

function is turned off. A timing diagram is shown in Fig.3.

To hold the bridge, an external control circuit is required to

provide a source current to the bridge enable control input

(pin BE), and to supply a reference voltage to pin BER,

(see Fig.6).

Shut-down

The active HIGH shut-down input (pin SD) can be used at

any time to turn off all four MOSFETs. However, if the

supply voltage drops below the ‘stop oscillating threshold’,

the bridge re-enters the start-up phase even if the

shut-down function is active.

1999 Aug 10 7

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

Fig.3 Timing diagram.

handbook, full pagewidth

MGK594

dead time

VRC

VBE

VGHL

VGLR

VGHR

VGLL

off

time

1999 Aug 10 8

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. This value is guaranteed down to Tj=−25 °C. From Tj=−25 to −40 °C, the voltage on pin HV is limited to 530 V and

the floating supply voltage (VFSL,V

FSR) is limited to a maximum value of 548 V.

2. In accordance with the human body model: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series

resistor.

THERMAL CHARACTERISTICS

QUALITY SPECIFICATION

In accordance with

“SNW-FQ-611 part E”

. The numbers of the quality specification can be found in the

“Quality

Reference Handbook”

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VDD supply voltage (low voltage) 0 18 V

VHV supply voltage (high voltage) note 1 0 570 V

VFSL;V

FSR ﬂoating supply voltage VSHL =V

SHR = 570 V, note 1 570 588 V

VSHL =V

SHR = 0 V 0 18 V

VSHL;V

SHR source voltage for higher right and left

MOSFETs with reference to PGND and SGND −10 +570 V

VPGND power ground voltage with reference to SGND −7 +10 V

Vi(BER) bridge enable reference input voltage 0 570 V

Vi(BE) bridge enable control input voltage Vi(BER) = 570 V 570 580 V

Vi(BER) =0V 0 10 V

i(BE) bridge enable control input current 0 700 µA

Vi(EXO) input voltage from external oscillator

on pin EXO 0V

DD V

VSD shut-down input voltage on pin SD 0 VDD V

SR slew rate at output pins repetitive −4 +4 V/ns

Tjjunction temperature −40 +150 °C

Tamb ambient temperature −40 +150 °C

Tstg storage temperature −55 +150 °C

Ves electrostatic handling note 2

pin HV −±1250 V

pins BE, BER, FSL, GHL, SHL,

SHR, GHR and FSR −±1500 V

SYMBOL PARAMETER VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient 70 K/W

1999 Aug 10 9

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

CHARACTERISTICS

Tj=25°C; all voltages with respect to PGND; positive currents ﬂow into the IC.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

High voltage

VHV high voltage supply 0 −570 V

ILleakage current with HV = 570 V applied to pins

BER, SHR and SHL −−5µA

PGND(ﬂoat);

VSGND(ﬂoat)

ﬂoating ground voltage 0 −5V

Start-up, powered via the HV pin; note 1

Istrtu start-up current −0.7 1.0 mA

Vstrtu start-up voltage high left and right MOSFETs off; low

left and right MOSFETs on −6−V

Vth(osc strt) start oscillating threshold

voltage fbridge = 500 Hz; no load 14.0 15.5 17.0 V

Vth(osc stp) stop oscillating threshold

voltage 11.5 13.0 14.5 V

Vhys hysteresis voltage between oscillation start and stop

levels 2.0 2.5 3.0 V

IHV supply current fbridge = 500 Hz; no load; VHV = 50 V 0.3 0.5 0.7 mA

VDD internal supply voltage (low

voltage) fbridge = 500 Hz; no load; VHV = 50 V 14.0 15.3 16.5 V

fbridge = 500 Hz; no load; at start

oscillating threshold 10.5 11 11.5 V

fbridge = 500 Hz; no load; at stop

oscillating threshold 8.0 8.5 9.0 V

Output drivers

Vo(GHL,GHR) output voltage on pins GHL

and GHR for gates of higher

right and left MOSFETs

at power-up; no load; VHV =50V;

bridge = 500 Hz; 13.2 14.5 16.5 V

Vo(GLL,GLR) output voltage on pins GLL

and GLR for gates of lower

right and left MOSFETs

14.0 15.3 16.5 V

∆t time difference between

diagonally placed output

drivers

0−100 ns

RonH higher MOSFETs on

resistance VFSR =V

FSL = 15 V; Isource =50mA 33 39 46 Ω

offH higher MOSFETs off

resistance VFSR =V

FSL = 15 V; Isink =50mA 11 14 17 Ω

onL lower MOSFETs on

resistance VDD =15V; I

source =50mA 333946Ω

offL lower MOSFETs off

resistance VDD =15V; I

sink =50mA 111417Ω

diode bootstrap diode voltage

drop Idiode = 1 mA 0.8 1.0 1.2 V

1999 Aug 10 10

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

Io(source) output source current VDD =V

FSL =V

FSR =15V;

GHR =V

GHL =V

GLR =V

GLL =0V 140 190 240 mA

Io(sink) output sink current VDD =V

FSL =V

FSR =15V;

GHR =V

GHL =V

GLR =V

GLL =15V 200 260 320 mA

IFSL(ﬂoat);

IFSR(ﬂoat)

ﬂoating supply current VFSR =V

FSL =15V −15 −µA

Internal oscillator; notes 2 and 3

fbridge bridge oscillating frequency EXO pin connected to SGND 50 −50000 Hz

∆fosc/∆T oscillator frequency

dependency with respect to

temperature

ﬁxed RC; ∆T=−40 °C to +150 °C0 −10 %

∆fosc/∆VDD oscillator frequency

dependency with respect to

VDD

ﬁxed RC; ∆VDD =12to16V 0 −10 %

kHHIGH-level trip point VRCH =k

H×V

DD 0.67 0.71 0.75

kLLOW-level trip point VRCL =k

L×V

DD −0.01 −

kosc oscillator constant 2.34 2.49 2.64

External oscillator; note 2

fosc(ext) external oscillator frequency RC pin connected to SGND; 100 −100000 Hz

VIH HIGH-level input voltage 4.5 −VDD V

VIL LOW-level input voltage 0 −0.5 V

Ii(EXO) input current 0 −50 µA

Dead time control; notes 2 and 4

tdead dead time control range

(adjusted externally) 0.4 −4µs

kDT dead time variable RDT =k

DT ×tdead −70 kΩ180 270 380 kΩ/µs

Bridge enable; notes 2 and 5

IIH HIGH-level input current;

note 6 bridge enable active 100 −700 µA

VBE −VBER =5V −1.1 −mA

IIL LOW-level input current bridge enable not active 0 −20 µA

VBE −VBER threshold voltage IIH = 100 µA

with reference to HV

with reference to PGND 2.1

3.5

2.6

5.5

3.0

7.5

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

fbridge 1

kosc Rosc

×Cosc

×()

--------------------------------------------------

fbridge fosc(ext)

-----------------

∆VEXO

∆t

----------------- 5 V/ms>

∆VEXO

∆t

----------------- 5 V/ms>

1999 Aug 10 11

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

Notes

1. The current into pin HV is internally limited to 15 mA at Tj=25°C and to 10 mA at Tj= 150 °C.

2. VDD =15V.

3. The bridge frequency can be calculated using Equation (1).

4. The ‘dead time’ is adjusted using an external resistor; see Equation (2).

5. This function is disabled when using an external oscillator.

6. IIH < 2.1 mA when the condition is VBE −VBER = 5 V at Tj= 150 °C.

Shut-down; note 2

VIH HIGH-level input voltage shut-down active; 4.5 −VDD V

VIL LOW-level input voltage shut-down not active; 0 −0.5 V

Ii(SD) input current 0 −50 µA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

∆VSD

∆t

-------------- 5 V/ms>

∆VSD

∆t

-------------- 5 V/ms>

Design equations

BRIDGE COMMUTATION FREQUENCY

The internal ÷2 circuit requires the frequency of the

internal or external oscillator to be twice the bridge

frequency. When the internal oscillator is used, the bridge

frequency can be adjusted using an external resistor and

capacitor:

(1)

Where:

Rosc(min) = 200 kΩ

Rosc(max) =2MΩ (with low leakage current).

DEAD TIME (2)

The ‘dead time’ (tdead) can be adjusted using an external

resistor (RDT) connected between DTC and SGND:

Units are kΩ for RDT and µs for tdead.

Where:

RDT(min) =50kΩ

DT(max) =1MΩ.

bridge 1

2.8 Rosc Cosc

××

--------------------------------------------

RDT 270 tdead 70–×=

1999 Aug 10 12

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

APPLICATION INFORMATION

Basic application

Abasicfullbridgeconfiguration with an HID lamp is shown

in Fig.4. The bridge enable and shut-down functions are

not used in this application. The EXO, BE, BER and

SD pins are connected to system ground. The IC is

When the internal oscillator is used; the bridge

commutating frequency is determined by the values of

Rosc and Cosc. The bridge starts oscillating when the HV

supply voltage exceeds the ‘start oscillating threshold’

(typically 15.5 V). If the supply voltage at the HV pin falls

below the ‘stop oscillating threshold’ (typically 13 V), the

UBA2030T enters the start-up state.

Fig.4 Basic configuration.

handbook, full pagewidth

UBA2030T

SHR

GHR

FSR

VDD

SGND

EXO

DTC

SHL

GHL

FSL

PGND

GLR

BER

GLL

IGNITOR LAMP

C3 RDT

high voltage

570 V (max)

system

ground

Cosc Rosc

MGK592

1999 Aug 10 13

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

Application with external control

Figure 5 shows an application containing an external

oscillator control circuit referenced to system ground.

The RC, BER and BE pins are connected to system

ground. The bridge commutation frequency is determined

by the external oscillator. The shut-down input (pin SD)

can be used to quickly turn off all four MOSFETs in the full

bridge.

Fig.5 External control configuration.

handbook, full pagewidth

UBA2030T

SHR

GHR

FSR

VDD

SGND

EXO

DTC

SHL

GHL

FSL

PGND

GLR

BER

GLL

IGNITOR LAMP

C3 RDT

system

ground

MGK593

EXTERNAL

OSCILLATOR

CONTROL

CIRCUIT

high voltage

570 V (max)

1999 Aug 10 14

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

Automotive application

The life of an HID lamp depends on the rate of sodium

migration through its quartz wall. To minimize this, the

lamp must be operated negative with respect to system

ground.

Figure 6 shows a full bridge with an HID lamp in an

automotive environment, and a control circuit referenced

to the high side of the bridge. The BER and HV pins are

connected to system ground. The bridge can be held in its

current state using the BE pin. See the timing diagram in

Fig.3.

Fig.6 Automotive configuration (example 1).

handbook, full pagewidth

UBA2030T

SHR

GHR

FSR

VDD

SGND

EXO

DTC

SHL

GHL

FSL

PGND

GLR

BER

GLL

IGNITOR LAMP

C3 RDT

high voltage

−570 V (max)

system

ground

CONTROL

UNIT

Cosc Rosc

MGK591

1999 Aug 10 15

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

Additional application information

The UBA2030T is the commutator part in a complete

system for driving an HID lamp. The life of the HID lamp

can depend on the amount of sodium that migrates

through its quartz wall. To minimize this migration, the

lamp must be operated negative with respect to system

ground.

Figure 7 shows a full bridge with an HID lamp in a typical

automotive configuration using a control unit referenced to

the high side of the bridge. Pin BER is connected to

system ground. The bridge can be held in its current state

by pin BE. The supply current to the internal low voltage

circuit is fed to pin HV which can be connected to either

system ground or to a low voltage DC supply, such as a

battery, as indicated by the dotted lines in Fig.7.

The diode in series with the supply to pin HV prevents Ci

being discharged if the lamp is shorted during the ignition

phase. C6 should be positioned as close as possible to

pin DTC. The control unit drives the MOSFETs relatively

hard which can cause radiation. To prevent switching the

MOSFETs hard, a resistor can be connected in series with

each gate.

In all applications, the voltage on pin HV must not be

allowed to become lower than the voltage at pin VDD

during the start-up phase or during normal operation,

otherwise the full bridge will not operate correctly. During

the start-up phase, pin EXO and pin SD should both be

LOW. The voltage as a function of time at pin EXO and

pin SD should be >5 V/ms.

Fig.7 Automotive configuration (example 2).

handbook, full pagewidth

UBA2030T

SHR

GHR

FSR

VDD

SGND

EXO

DTC

SHL

GHL

FSL

PGND

GLR

BER

GLL

IGNITOR LAMP

RDT

high voltage

−570 V (max)

system

ground

CONTROL

UNIT

from

low voltage

DC supply

Cosc Rosc

MGL763

C1 = 150 nF.

C2 = 150 nF.

C3 = 220 nF.

C6 = 100 pF.

Cosc =10nF.

osc = 147 kΩ.

RDT =50to1000kΩ (220 kΩ= a ‘dead time’ of 1 µs).

1999 Aug 10 16

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

PACKAGE OUTLINE

UNIT A

max. A1A2A3bpcD

(1) E(1) (1)

ELL

pQZ

ywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

inches

2.65 0.30

0.10 2.45

2.25 0.49

0.36 0.32

0.23 15.6

15.2 7.6

7.4 1.27 10.65

10.00 1.1

1.0 0.9

0.4 8

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1.1

0.4

SOT137-1

detail X

vMA

(A )

0.25

075E05 MS-013AD

pin 1 index

0.10 0.012

0.004 0.096

0.089 0.019

0.014 0.013

0.009 0.61

0.60 0.30

0.29 0.050

1.4

0.055

0.419

0.394 0.043

0.039 0.035

0.016

0.01

0.25

0.01 0.004

0.043

0.016

0.01

0 5 10 mm

scale

SO24: plastic small outline package; 24 leads; body width 7.5 mm SOT137-1

95-01-24

97-05-22

1999 Aug 10 17

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

SOLDERING

Introduction to soldering surface mount packages

Thistextgives a verybriefinsighttoa complex technology.

A more in-depth account of soldering ICs can be found in

our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).

There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering is not always suitable

for surface mount ICs, or for printed-circuit boards with

high population densities. In these situations reflow

soldering is often used.

Reﬂow soldering

Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied

totheprinted-circuitboardbyscreenprinting,stencillingor

pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,

infrared/convection heating in a conveyor type oven.

Throughput times (preheating, soldering and cooling) vary

between 100 and 200 seconds depending on heating

method.

Typical reflow peak temperatures range from

215 to 250 °C. The top-surface temperature of the

packages should preferable be kept below 230 °C.

Wave soldering

Conventional single wave soldering is not recommended

forsurfacemount devices(SMDs)orprinted-circuit boards

with a high component density, as solder bridging and

non-wetting can present major problems.

To overcome these problems the double-wave soldering

method was specifically developed.

If wave soldering is used the following conditions must be

observed for optimal results:

•Use a double-wave soldering method comprising a

turbulent wave with high upward pressure followed by a

smooth laminar wave.

•For packages with leads on two sides and a pitch (e):

– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the

transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the

printed-circuit board.

The footprint must incorporate solder thieves at the

downstream end.

•Forpackageswith leadsonfoursides, thefootprintmust

be placed at a 45°angle to the transport direction of the

printed-circuit board. The footprint must incorporate

solder thieves downstream and at the side corners.

During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or

less) soldering iron applied to the flat part of the lead.

Contact time must be limited to 10 seconds at up to

300 °C.

When using a dedicated tool, all other leads can be

soldered in one operation within 2 to 5 seconds between

270 and 320 °C.

1999 Aug 10 18

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

Suitability of surface mount IC packages for wave and reﬂow soldering methods

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package

cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the

Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink

(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;

it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

PACKAGE SOLDERING METHOD

WAVE REFLOW(1)

BGA, SQFP not suitable suitable

HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS not suitable(2) suitable

PLCC(3), SO, SOJ suitable suitable

LQFP, QFP, TQFP not recommended(3)(4) suitable

SSOP, TSSOP, VSO not recommended(5) suitable

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1999 Aug 10 19

Philips Semiconductors Preliminary speciﬁcation

Full bridge driver IC UBA2030T

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

1999 67

Philips Semiconductors – a w orldwide compan y

For all other countries apply to: Philips Semiconductors,

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,

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Printed in The Netherlands 295002/02/pp20 Date of release: 1999 Aug 10 Document order number: 9397 750 05309