GaAlAs-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480, SFH 481, SFH 482 SFH 480 SFH 481 SFH 482 Wesentliche Merkmale Features * Hergestellt im Schmezepitaxieverfahren * Anode galvanisch mit dem Gehauseboden verbunden * Hohe Zuverlassigkeit * Gute spektrale Anpassung an Si-Fotoempfanger * Hermetisch dichtes Metallgehause * SFH 480: Gehausegleich mit SFH 216 * SFH 481: Gehausegleich mit BPX 43 * SFH 482: Gehausegleich mit BPX 38, BPX 65 * GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process * Anode is electrically connected to the case * High reliability * Matches all Si-Photodetectors * Hermetically sealed package * SFH 480: Same package as SFH 216 * SFH 481: Same package as BPX 43 * SFH 482: Same package as BPX 38, BPX 65 Anwendungen Applications * Lichtschranken fur Gleich- und Wechsellichtbetrieb * IR-Geratefernsteuerungen * Sensorik * Lichtgitter * * * * 2001-10-01 1 Photointerrupters IR remote control of various equipmet Sensor technology Light-grille barrier SFH 480, SFH 481, SFH 482 Typ Type Bestellnummer Ordering Code Gehause Package SFH 480 Q62703-Q1087 SFH 480-2/3 Q62703-Q5195 SFH 481 Q62703-Q1088 18 A3 DIN 41876 (TO-18), Anschlusse im 2.54-mm-Raster (1/10''), Kathodenkennzeichnung: Nase am Gehauseboden 18 A3 DIN 41876 (TO-18), lead spacing 2.54 mm (1/10''), cathode marking: projection at package SFH 481-1/2 Q62703-Q4752 SFH 481-2/3 Q62703-Q4753 SFH 482 Q62703-Q1089 SFH 482-1/2 Q62703-Q4771 SFH 482-2/3 Q62703-Q4754 SFH 482-M E7800 Q62703-Q2186 2001-10-01 2 SFH 480, SFH 481, SFH 482 Grenzwerte (TC = 25 C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range SFH 480, SFH 482 Top; Tstg - 40 ... + 125 C Betriebs- und Lagertemperatur Operating and storage temperature range SFH 481 Top; Tstg - 40 ... + 100 C Sperrschichttemperatur Junction temperature Tj 100 C Sperrspannung Reverse voltage VR 5 V Durchlastrom Forward current IF 200 mA Stostrom, tp = 10 s, D = 0 Surge current IFSM 2.5 A Verlustleistung Power dissipation Ptot 470 mW Warmewiderstand Thermal resistance RthJA RthJC 450 160 K/W K/W Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA peak 880 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA 80 nm 6 15 30 Grad deg. Kennwerte (TA = 25 C) Characteristics Abstrahlwinkel Half angle SFH 480 SFH 481 SFH 482 2001-10-01 3 SFH 480, SFH 481, SFH 482 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Aktive Chipflache Active chip area A 0.16 mm2 Abmessungen der aktiven Chipflache Dimension of the active chip area LxB LxW 0.4 x 0.4 mm Abstand Chipoberflache bis Linsenscheitel Distance chip front to lens top SFH 480 SFH 481 SFH 482 H H H 4.0 ... 4.8 2.8 ... 3.7 2.1 ... 2.7 mm mm mm Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 tr, tf 0.6/0.5 s Kapazitat Capacitance VR = 0 V, f = 1 MHz Co 25 pF VF VF 1.50 ( 1.8) 2.4 (< 3.0) V V Sperrstrom, Reverse current VR = 5 V IR 0.01 ( 1) A Gesamtstrahlungsflu Total radiant flux IF = 100 mA, tp = 20 ms e 12 mW Temperaturkoeffizient von Ie bzw. e, TCI - 0.5 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV -2 mV/K Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TC + 0.25 nm/K Durchlaspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA 2001-10-01 4 SFH 480, SFH 481, SFH 482 Gruppierung der Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Grouping of Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit SFH 480-2 SFH 480-3 SFH 481 SFH 481-1 SFH 481-2 Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie max > 40 - > 63 - 10 - 10 20 16 - mW/sr mW/sr Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Ie typ. 540 630 220 130 220 mW/sr Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit SFH 482 SFH 482-1 SFH 482-2 SFH 482-3 SFH 482-M E 78001) Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie max 3.15 - 3.15 6.3 5 10 8 - 1.6 ... 3.2 mW/sr - mW/sr Strahlstarke Radiant intensity IF = 1 A, tp = 100 s - 40 65 80 - Ie typ. mW/sr 1) Die Messung der Strahlstarke und des Halbwinkels erfolgt mit einer Lochblende vor dem Bauteil (Durchmesser der Lochblende: 2.0 mm; Abstand Lochblende zu Gehauseruckseite: 5.4 mm). Dadurch wird sichergestellt, da bei der Strahlstarkemessung nur diejenige Strahlung in Achsrichtung bewertet wird, die direkt von der Chipoberflache austritt. Von der Bodenplatte reflektierte Strahlung (vagabundierende Strahlung) wird dagegen nicht bewertet. Diese Reflexionen sind besonders bei Abbildungen der Chipoberflache uber Zusatzoptiken storend (z.B. Lichtschranken groer Reichweite). In der Anwendung werden im allgemeinen diese Reflexionen ebenfalls durch Blenden unterdruckt. Durch dieses, der Anwendung entsprechende Meverfahren ergibt sich fur den Anwender eine besser verwertbare Groe. Diese Lochblendenmessung ist gekennzeichnet durch den Eintrag E 7800", der an die Typenbezeichnung angehangt ist. 1) An aperture is used in front of the component for measurement of the radiant intensity and the half angle (diameter of the aperture: 1.1 mm; distance of aperture to case back side: 4 mm). This ensures that solely the radiation in axial direction emitting directly from the chip surface will be evaluated during measurement of the radiant intensity. Radiation reflected by the bottom plate (stray radiation) will not be evaluated. These reflections impair the projection of the chip surface by additional optics (e.g. long-range light reflection switches). In respect of the application of the component, these reflections are generally suppressed by apertures as well. This measuring procedure corresponding with the application provides more useful values. This aperture measurement is denoted by "E 7800" added to the type designation. 2001-10-01 5 SFH 480, SFH 481, SFH 482 Radiation Characteristics, SFH 480 Irel = f () 40 30 20 10 0 OHR01888 1.0 50 0.8 60 0.6 70 0.4 0.2 80 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Radiation Characteristics, SFH 481 Irel = f () 40 30 20 10 0 OHR01889 1.0 50 0.8 60 0.6 70 0.4 0.2 80 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Radiation Characteristics, SFH 482 Irel = f () 40 30 20 10 0 OHR01890 1.0 50 0.8 60 0.6 70 0.4 0.2 80 0 90 100 1.0 2001-10-01 0.8 0.6 0.4 0 20 40 60 80 100 6 120 SFH 480, SFH 481, SFH 482 Relative Spectral Emission Irel = f () Single pulse, tp = 20 s OHR00877 100 Max. Permissible Forward Current SFH 481, IF = f (TA, TC) OHR00878 10 2 OHR00946 240 e % rel Ie = f (IF ) Ie 100 mA Radiant Intensity e (100mA) F mA 1 80 10 60 10 0 200 R thJC = 160 K/W 160 120 10 -1 40 R thJA = 450 K/W 80 10 -2 20 0 750 10 -3 800 850 900 950 nm 1000 Forward Current, IF = f (VF) Single pulse, tp = 20 s F 10 1 10 2 10 3 mA 10 4 F 10 4 OHR00948 tp F mA 5 A 10 10 0 Permissible Pulse Handling Capability IF = f (), TC = 25 C, duty cycle D = parameter OHR01173 10 1 40 0 D= tp T D = 0.005 0.01 0.02 F 0 0 20 40 60 80 C 100 T A, T C Max. Permissible Forward Current SFH 480, SFH 482, IF = f (TA, TC) OHR00396 240 F mA 200 T 160 R thJC = 160 K/W 0.05 10 3 10 -1 0.1 120 0.2 5 10 -2 R thJA = 450 K/W 80 0.5 40 DC 10 -3 0 1 2 3 4 5 VF 2001-10-01 10 2 10 -5 10 -4 10 -3 7 10 -2 10 -1 s 10 0 tp 0 0 20 40 60 80 100 C 130 T A, T C SFH 480, SFH 481, SFH 482 Mazeichnung Package Outlines SFH 480 Radiant Sensitive area 5.3 (0.209) 5.0 (0.197) ) 43 ) 0.0 .035 ( 1.1 .9 (0 0 1. 0.9 1 (0 (0 .043 .03 ) 5) 14.5 (0.571) 12.5 (0.492) 7.4 (0.291) 6.6 (0.260) o5.6 (0.220) o5.3 (0.209) o4.8 (0.189) o4.6 (0.181) o0.45 (0.018) 2.54 (0.100) spacing Cathode (SFH 480) Anode (SFH 216, SFH 400) Chip position 2.7 (0.106) GEOY6314 SFH 481 5.6 (0.220) GETY6091 5) o5.3 (0.209) o5.0 (0.197) ) (0 .0 2.54 (0.100) spacing 3) .03 (0 .04 (0 0.9 12.5 (0.492) Cathode (SFH 402, BPX 65) Anode (SFH 482) 35 .04 0.9 1.1 (0 Radiant sensitive area 1.1 14.5 (0.571) 5) 0.9 o5.6 (0.220) o5.3 (0.209) 3) 5.5 (0.217) 5.0 (0.197) o4.8 (0.189) o4.6 (0.181) o0.45 (0.018) .03 (0 .04 12.5 (0.492) (2.7 (0.106)) (0 1.1 o4.8 (0.189) o4.6 (0.181) 5) 6.4 (0.252) Chip position 3) .03 (0 glass lens 5.0 (0.197) 14.5 (0.571) SFH 482 .04 (0 0.9 welded 5.3 (0.209) Anode = SFH 481 Cathode = SFH 401 (package) 1.1 2.54 (0.100) spacing o0.45 (0.018) 3) (2.7 (0.106)) Chip position o5.6 (0.220) o5.3 (0.209) GETY6013 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2001-10-01 8 SFH 480, SFH 481, SFH 482 Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-10-01 9