SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR 2N5333 * Low Saturation Voltage * Fast Switching * Hermetic TO39 Metal package. * For power amplifier and high speed Switching Applications * High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO VCEO VEBO IC ICM IB IE PD PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Peak Collector Current Base Current Emitter Current Total Power Dissipation at -100V -80V -6V -2A -5A -1A -3A 1.0W 0.15W/C 15W -65 to +200C -65 to +200C 260C TA = 25C Derate Above 25C TC = 100C Total Power Dissipation at Junction Temperature Range Storage Temperature Range Lead Temperature (1/16 Inch from Case for 10 seconds) THERMAL PROPERTIES Symbols Parameters RJC RJA Min. Typ. Max. Units Thermal Resistance, Junction To Case 6.66 C/W Thermal Resistance, Junction To Ambient 175 C/W Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing an order. Semelab Ltd Telephone +44 (0) 1455 556565 Email: sales@semelab-tt.com Coventry Road, Lutterworth, Leicestershire, LE17 4JB Fax +44 (0) 1455 552612 Website: http://www.semelab-tt.com Document Number 8333 Issue 1 Page 1 of 3 SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR 2N5333 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO(1) Collector-Emitter Breakdown Voltage Min. IC = -30mA IB = 0 ICEO Collector Cut-Off Current VCE = -40V IB = 0 -50 ICES Collector Cut-Off Current VCE = -90V VBE = 0V -10 VCE = -50V TC = 150C -500 IEBO Emitter Cut-Off Current VEB = -4V IC = 0 -1.0 VEB = -6V IC = 0 -100 hFE(1) Static Forward Current Transfer Ratio VCE = -4V IC = -1.0A 30 VCE = -4V IC = -2.0A 10 VBE(1) Base-Emitter Voltage VCE = -4V IC = -2.0A -1.5 Max. IC = -1.0A IB = -0.1A -0.45 IC = -2.0A IB = -0.4A -1.0 -80 VCE(sat) Collector-Emitter Saturation Voltage hfe Small-Signal Common-Emitter Forward Current Transfer Ratio VCE = -10V, IC = -1.0A, f = 1.0KHz 30 |hfe| Small-Signal Common-Emitter Forward Current Transfer Ratio VCE = -10V, IC = -1.0A, f = 15MHz 2 (1) Typ. Units V A 150 V SWITCHING CHARACTERISTICS (TC = 25C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ. ton Turn-On Time IC = -1.0A IB1 = -IB2 = 0.1A 150 toff Turn-Off Time VBE(off) = 3.7V RL = 20 450 Max. Units ns Notes (1) Pulse Width 300us, 2% Semelab Ltd Telephone +44 (0) 1455 556565 Email: sales@semelab-tt.com Coventry Road, Lutterworth, Leicestershire, LE17 4JB Fax +44 (0) 1455 552612 Website: http://www.semelab-tt.com Document Number 8333 Issue 1 Page 2 of 3 SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR 2N5333 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45 TO-39 (TO-205AD) Pin 1 - Emitter Semelab Ltd Telephone +44 (0) 1455 556565 Email: sales@semelab-tt.com Pin 2 - Base Coventry Road, Lutterworth, Leicestershire, LE17 4JB Fax +44 (0) 1455 552612 Website: http://www.semelab-tt.com Pin 3 - Collector Document Number 8333 Issue 1 Page 3 of 3