S9012
PNP Silicon
Transistors
TO-92
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.46 4.70
C .500 --- 12.7 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
G .095 .105 2.42 2.67
A
E
B
C
D
G
www.mccsemi.com
Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 0.5A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55OC to +150OC
omponents
21201 Itasca Street Chatsworth
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MCC
• Marking Code: S9012
Pin Configuration
Bottom View CB E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0) 40 --- Vdc
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0) 25 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0) 5.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=40Vdc, IE=0) --- 0.1 uAdc
ICEO Collector Cutoff Current
(VCE=20Vdc, IB=0) --- 0.2 uAdc
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0) --- 0.1 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(IC=50mAdc, VCE=1.0Vdc) 64 300 ---
hFE(2) DC Current Gain
(IC=500mAdc, VCE=1.0Vdc) 40 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc) --- 0.6 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc) --- 1.2 Vdc
VEB Base- Emitter Voltage
(IE=100mAdc) --- 1.4 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency
(IC=20mAdc, VCE=6.0Vdc, f=30MHz) 150 --- MHz
CLASSIFICATION OF HFE (1)
Rank D E F G H I
Range 64-91 78-112 96-135 112-166 144-202 190-300
