VEMD5110X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES * Package type: surface mount * Package form: top view * Dimensions (L x W x H in mm): 5 x 4 x 0.9 * Radiant sensitive area (in mm2): 7.5 * AEC-Q101 qualified * High radiant sensitivity * Daylight blocking filter matched with 870 nm to 950 nm emitters * Fast response times DESCRIPTION * Angle of half sensitivity: = 65 VEMD5110X01 is a high speed and high sensitive PIN photodiode. It is a low profile surface mount device (SMD) including the chip with a 7.5 mm2 sensitive area and a daylight blocking filter matched with IR emitters operating at wavelength 870 nm or 950 nm. * Floor life: 72 h, MSL 4, according to J-STD-020 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS * High speed detector for infrared radiation * Infrared remote control and free air transmissionsystems, e.g. road cash systems data * Photodiode for smoke detectors * Photodiode for rain sensors PRODUCT SUMMARY COMPONENT Ira (A) (deg) 0.5 (nm) VEMD5110X01 48 65 790 to 1050 Note * Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD5110X01 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view VEMD5110X01-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view Note * MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb 25 C Junction temperature Operating temperature range Storage temperature range Soldering temperature Acc. reflow sloder profile fig. 8 Thermal resistance junction/ambient ESD safety HBM Rev. 1.1, 21-Mar-16 2000 V, 1.5 k, 100 pF, 3 pulses SYMBOL VALUE UNIT VR 20 V PV 215 mW Tj 110 C Tamb -40 to +110 C Tstg -40 to +110 C Tsd 260 C RthJA 350 K/W ESDHBM 2 kV Document Number: 84204 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5110X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) TEST CONDITION PARAMETER IF = 50 mA VF IR = 100 A, E = 0 V(BR) Forward voltage Breakdown voltage MIN. TYP. MAX. UNIT 1 1.3 V 20 V VR = 10 V, E = 0 Iro 2 VR = 0 V, f = 1 MHz, E = 0 CD 70 VR = 3 V, f = 1 MHz, E = 0 CD 25 Reverse dark current Diode capacitance SYMBOL 30 nA 40 pF pF Open circuit voltage Ee = 1 mW/cm2, = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, = 950 nm TKVo -2.6 mV/K Short circuit current Ee = 1 mW/cm2, = 950 nm Ik 45 A TKIk 0.1 %/K 48 A mW/cm2, = 950 nm Temperature coefficient of Ik Ee = 1 Reverse light current Ee = 1 mW/cm2, = 950 nm, VR = 5 V 40 Ira Angle of half sensitivity 65 deg Wavelength of peak sensitivity p 940 nm 0.5 790 to 1050 nm VR = 10 V, = 950 nm NEP 4 x 10-14 W/Hz Rise time VR = 10 V, RL = 1 k, = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 k, = 820 nm tf 100 ns Range of spectral bandwidth Noise equivalent power BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Basic characteristics graphs to be extended to 110 C ambient temperatures where applicable. I ra rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 Tamb - Ambient Temperature (C) VR = 5 V = 950 nm 1.2 1.0 0.8 0.6 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.1, 21-Mar-16 1.4 0 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 84204 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5110X01 www.vishay.com Vishay Semiconductors 1.2 S()rel - Relative Spectral Sensivity 100 10 VR = 5 V = 950 nm 1 0.1 0.01 0.1 1 0.8 0.6 0.4 0.2 0.0 750 10 Ee - Irradiance (mW/cm2) 12787 1.0 850 Fig. 3 - Reverse Light Current vs. Irradiance 950 0 Srel - Relative Radiant Sensitivity Ira - Reverse Light Current (A) 0.5 mW/cm 2 0.2 mW/cm 2 10 0.1 mW/cm 2 0.05 mW/cm 2 = 950 nm 0.1 1 10 10 20 30 1 mW/cm 2 40 1.0 0.9 50 0.8 60 70 0.7 100 VR - Reverse Voltage (V) 12788 1150 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 100 1 1050 - Wavelength (nm) 94 8426 - Angular Displacement Ira - Reverse Light Current (A) 1000 80 0.6 0.4 0.2 0 94 8406 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 80 E=0 f = 1 MHz 60 40 20 0 0.1 948407 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 1.1, 21-Mar-16 Document Number: 84204 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5110X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 4 Bottom view 2.1 1.8 3 5 1.8 0.2 0.1 3 0.9 0.15 Optical center Optical window Top view C (20 : 1) C Tie bar, electrically connected to cathode 2 Recommended footprint 0.65 1.2 4.1 1 0.6 Cathode 0.9 1.2 0.8 1 5.2 2.5 Exposed pad (cathode) 3.1 NC 1 0.8 0.4 (4 x) Center of device 0.8 2 Anode 0.6 (4 x) Drawing- No.: 6.550-5329.01-4 Issue: 2; 03.03.2016 Rev. 1.1, 21-Mar-16 Not indicated tolerances 0.1 Technical drawings according to DIN specification Document Number: 84204 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5110X01 www.vishay.com Vishay Semiconductors TAPE AND REEL DIMENSIONS in millimeters Reel-design is reperesentative for different types Unreel direction X Label posted here O 1.55 B-B ( 2 : 1 ) 0.3 B O 1.5 8 2 X Anode 1.75 B Drawing-No.: 9.800-5129.01-4; Issue: 1; 20.07.2015 Rev. 1.1, 21-Mar-16 1.42 5.5 Document Number: 84204 5 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5110X01 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK 300 Temperature (C) max. 260 C 245 C 255 C 240 C 217 C 250 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp down 6 C/s 50 0 19841 50 100 150 200 250 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D Rev. 1.1, 21-Mar-16 FLOOR LIFE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: Level 4 Floor life: 72 h Conditions: Tamb < 30 C, RH < 60 % DRYING max. ramp up 3 C/s 0 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or recommended conditions: 192 h at 40 C (+ 5 C), RH < 5 % or 96 h at 60 C (+ 5 C), RH < 5 %. Document Number: 84204 6 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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