VEMD5110X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 21-Mar-16 1Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VEMD5110X01 is a high speed and high sensitive PIN
photodiode. It is a low profile surface mount device (SMD)
including the chip with a 7.5 mm2 sensitive area and a
daylight blocking filter matched with IR emitters operating at
wavelength 870 nm or 950 nm.
FEATURES
Package type: surface mount
Package form: top view
Dimensions (L x W x H in mm): 5 x 4 x 0.9
Radiant sensitive area (in mm2): 7.5
AEC-Q101 qualified
High radiant sensitivity
Daylight blocking filter matched with 870 nm
to 950 nm emitters
Fast response times
Angle of half sensitivity: ϕ = ± 65°
Floor life: 72 h, MSL 4, according to J-STD-020
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
High speed detector for infrared radiation
Infrared remote control and free air data
transmissionsystems, e.g. road cash systems
Photodiode for smoke detectors
Photodiode for rain sensors
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm)
VEMD5110X01 48 ± 65 790 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD5110X01 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view
VEMD5110X01-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR20 V
Power dissipation Tamb 25 °C PV215 mW
Junction temperature Tj110 °C
Operating temperature range Tamb -40 to +110 °C
Storage temperature range Tstg -40 to +110 °C
Soldering temperature Acc. reflow sloder profile fig. 8 Tsd 260 °C
Thermal resistance junction/ambient RthJA 350 K/W
ESD safety HBM ± 2000 V, 1.5 kΩ, 100 pF, 3 pulses ESDHBM 2 kV
VEMD5110X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 21-Mar-16 2Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF11.3V
Breakdown voltage IR = 100 μA, E = 0 V(BR) 20 V
Reverse dark current VR = 10 V, E = 0 Iro 230nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD70 pF
VR = 3 V, f = 1 MHz, E = 0 CD25 40 pF
Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo350 mV
Temperature coefficient of VoEe = 1 mW/cm2, λ = 950 nm TKVo -2.6 mV/K
Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik45 μA
Temperature coefficient of IkEe = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K
Reverse light current Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V Ira 40 48 μA
Angle of half sensitivity ϕ± 65 deg
Wavelength of peak sensitivity λp940 nm
Range of spectral bandwidth λ 0.5 790 to 1050 nm
Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/Hz
Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr100 ns
Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf100 ns
20 40 60 80
1
10
100
1000
100
94 8403
VR = 10 V
Tamb - Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
94 8409
V
R
=5V
λ = 950 nm
100806040200
I - Relative Reverse Light Current
T - Ambient Temperature (°C)
amb
ra rel
VEMD5110X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 21-Mar-16 3Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
I
ra
- Reverse Light Current (µA)
E
e
- Irradiance (mW/cm
2
)
10
12787
VR = 5 V
λ = 950 nm
0.1 1 10
1
10
100
V
R
- Reverse Voltage (V)
100
12788
I
ra
- Reverse Light Current (µA)
1mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
= 950 nm
λ
0
20
40
60
80
948407
E = 0
f = 1 MHz
CD - Diode Capacitance (pF)
VR - Reverse Voltage (V)
0.1 100
110
94 8426
S(λ)rel - Relative Spectral Sensivity
0.0
0.2
0.4
0.6
0.8
1.0
1.2
750 850 950 1050 1150
λ - Wavelength (nm)
0.4 0.2 0
S
rel
- Relative Radiant Sensitivity
94 8406
0.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
VEMD5110X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 21-Mar-16 4Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
Drawing- No.: 6.550-5329.01-4
Issue: 2; 03.03.2016
C
Not indicated tolerances ± 0.1 Technical drawings
according to DIN
specication
1
1
5.2
1
Center of device
Recommended footprint
Optical
window
Top view
Bottom view
4
5
0.9 ± 0.15
Tie bar, electrically connected to cathode
2.1
0.8 1.2
0.9
1.2
2.5
0.8
0.8
0.6 (4 x)
3.1
Exposed pad
(cathode)
1.8
3
3
0.4 (4 x)
2
2
Optical
center
C (20 : 1)
0.2
0.1
1.8
4.1
Cathode
0.6
NC
Anode
0.65
VEMD5110X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 21-Mar-16 5Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPE AND REEL DIMENSIONS in millimeters
Drawing-No.: 9.800-5129.01-4;
Issue: 1; 20.07.2015
X
B-B ( 2 : 1 )
X
B
B
Reel-design is reperesentative for different types
Unreel direction
Label posted
here
0.3
1.42
Ø 1.5
Ø 1.55
8
2
1.75
5.5
Anode
VEMD5110X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 21-Mar-16 6Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOLDER PROFILE
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
acc. J-STD-020D
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: Level 4
Floor life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
In case of moisture absorption devices should be
baked before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
96 h at 60 °C (+ 5 °C), RH < 5 %.
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
19841
255 °C
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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