SI3415A
P-Channel
Enhancement Mode
Field Effect Transistor
Features
Maximum Ratings @ 25
OC Unless Otherwise Specified
Symbol Parameter Rating Unit
VDS Drain-source Voltage -20
IDDrain Current-Continuous-4.0
VGS Gate-source Voltage
PDMaximum Power Dissipation 1.40W
R©JA Thermal Resistance Junction to Ambient(Note2)
TJ Operating Junction Temperature -55 to +150 к
TSTG Storage Temperature -55 to +150 к
Internal Block Diagram
Revision: B
2016/09/01
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SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
A
B
C
D
E
F
GH
J
.079
2.000 in
c
h
es
mm
.
03
1
.800
.035
.900
.037
.950
.037
.950
K
2
3
1
1.GATE
2. SOURCE
3. DRAIN
V
A
V
к/W
89.3
•Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
•Epoxy meets UL 94 V-0 flammability rating
•Moisture Sensitivity Level 1
D
S
G
Halogen free available upon request by adding suffix "-HF"
•
Micro Commercial Components
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Micro Commercial Components
20736 Marilla Street Chatsworth
CA 91311
Phone:(818) 701-4933
Fax: (818) 701-4939
•High Power and current handing capability
•Lead free product is acquired
IDM Drain Current-Pulsed(Note1) -30 A
±10
Marking：R15 / 3415
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Notes:
Revision: B
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS GS=0VV ID=-250μA --20- V
Zero Gate Voltage Drain Current IDSS DS=-V20V,VGS=0V - - 1 μA
Gate-Body Leakage Current IGSS GS=±V10V,VDS=0V - - ±10 μA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) DS=VV
GS,ID=-250μA --0.35--0.55--0.9V
VGS=-4.5V, ID=-4A - 34 45 mΩ
Drain-Source On-State Resistance RDS(ON) VGS=-2.5V, ID=-4A - 44 60 mΩ
Forward Transconductance gFS DS=-5VV,ID=-4A 8 - - S
Dynamic Characteristics (No t e4)
Input Capacitance Clss - - 950 PF
Output Capacitance Coss - - PF 165
Reverse Transfer Capacitance Crss
VDS=-10V,VGS=0V,
F=1.0MHz
- 120 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) - 12 nS
Turn-on Rise Time tr- 10 nS
Turn-Off Delay Time td(off) - 19 nS
Turn-Off Fall Time tf
VDD=-
10V,RL=2. 5Ω
VGS=-4.5V,R
GEN=3Ω
- 25 nS
Total Gate Charge Qg- 12 nC
Gate-Source Charge Qgs - - 1.4 nC
Gate-Drain Charge Qgd
VDS=-10V,ID=-4A,
VGS=-4.5V - 3.6 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD GS=0VV,IS=-4A - - --1.2 V
Diode Forward Current (Note 2) IS- -- - A4
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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Typical characteristics
Vgs Rgen
Vin
G
Vdd
Rl
Vout
S
D
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
VV
ININ
VV
OUTOUT
1010%%
1010%%
5050%% 5050%%
PPUULLSE WIDSE WIDTTHH
ININVERVERTTEEDD
tt
d(d(onon))
909090%%%
tt
rr
tt
onon
9090%%
1010%%
tt
offoff
tt
d(ofd(off)f)
tt
ff
9090%%
Figure 2:Switching Waveforms
Vds Drain-Source Voltage (V)
Figure 4 Safe Operation Area
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
PD Power(W)
ID- Drain Current (A） Rdson On-Resistance(mΩ)
ID- Drain Current (A)
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Device Packing
Part Number-TPTape&Reel: 3Kpcs/Reel
Ordering Information :
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MCC's products are not authorized for use as critical components in life support devices or systems without the express written
approval of Micro Commercial Components Corporation.
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our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine
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distributors.
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
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