BAT54H-G
SURFACE MOUNT SCHOTTKY DIODE
Data Sheet 3859, Rev. —
Features
Designed for mounting on small surface.
Extremely thin/leadless package.
Low drop-down voltage.
Majority carrier conduction.
Mechanical Data
Case: 1005 (2512) Standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026
Polarity: Indicated by cathode band.
Mounting Position: Any
Weight: 0.006 grams (approx.)
Maximum Ratings @TA=25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit
Repetitive Peak Reverse Voltage VRRM, VR 30 V
Average Rectified Output Current IO 100 mA
Peak Forward Surge Current (Note 1) IFSM 500 mA
Power Dissipation Pd 150 mW
Storage Temperature Range TSTG -40 +125 °C
Junction Temperature Range Tj -40 +125 °C
Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage 1 VF 0.24 V @ IF = 0.1mA DC
Forward Voltage 2 VF 0.32 V @ IF = 1mA DC
Forward Voltage 3 VF 0.40 V @ IF = 10mA DC
Forward Voltage 4 VF 0.50 V @ IF = 30mA DC
Forward Voltage 5 VF 1.00 V @ IF = 100mA DC
Reverse Leakage Current IR 2 µA @ VR = 25V
Capacitance between terminals CT 6 pF F = 1.0MHz, and 10 VDC reverse voltage
Note: 1. 8.3 ms single half sine-wave superimposed on rate load(JEDEC method).
0.102(2.60)
0.095(2.40)
0.021(0.55) Typ.
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
Dimensions in inches and (millimeter)
1005(2512)
0.012 (0.30) Typ.
0.039(1.00) Typ.
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SENSITRON
SEMICONDUCTOR
Green Products
Green Products in Compliance with the RoHS Directive
BAT54H-G
SURFACE MOUNT SCHOTTKY DIODE
Data Sheet 3859, Rev. —
Green Products
SENSITRON
SEMICONDUCTOR
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Forward current (mA )
Fig. 1 - Forward characteristics
Forward voltage (V)
Reverse voltage (V)
Fig. 2 - Reverse characteristics
Reverse current ( A )
Fig. 4 - Current derating curve
Ambient temperature ( C )
0
20
40
60
80
100
025 50 75 100 125 150
Mounting on glass epoxy PCBs
Average forward current ( % )
Fig. 3 - Capacitance between
terminals characteristics
Reverse voltage (V)
Capacitance between terminals (pF)
1
10
20
75 C
25 C
125 C
30
0 5 10
15
20 25 35
-25 C
75 C
25 C
125 C
0.1 0.2 0.4 0.6
00.50.3
100u
10u
1m
100n
1u
0 10 20 30 40 50
1000
1
10
100
f = 1 MHz
Ta = 25 C
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3859, -
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DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
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