HCPL-M601#500E - AVAGO TECHNOLOGIES

1. General description

The SA58631 is a one channel audio ampliﬁer in an HVSON8 package. It provides power

output of 3 W with an 8 Ω load at 9 V supply. The internal circuit is comprised of a BTL

(Bridge Tied Load) ampliﬁer with a complementary PNP-NPN output stage and

standby/mute logic. The SA58631 is housed in an 8-pin HVSON package which has an

exposed die attach paddle enabling reduced thermal resistance and increased power

dissipation.

2. Features

nLow junction-to-ambient thermal resistance using exposed die attach paddle

nGain can be ﬁxed with external resistors from 6 dB to 30 dB

nStandby mode controlled by CMOS-compatible levels

nLow standby current < 10 µA

nNo switch-on/switch-off plops

nHigh power supply ripple rejection: 50 dB minimum

nElectroStatic Discharge (ESD) protection

nOutput short circuit to ground protection

nThermal shutdown protection

3. Applications

nProfessional and amateur mobile radio

nPortable consumer products: toys and games

nPersonal computer remote speakers

SA58631

3 W BTL audio ampliﬁer

Rev. 02 — 12 October 2007 Product data sheet

Product data sheet Rev. 02 — 12 October 2007 2 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

4. Quick reference data

[1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase

being equal to the DC output offset voltage divided by RL.

[2] Supply voltage ripple rejection is measured at the output with a source impedance of Rs=0Ωat the input.

The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is

applied to the positive supply rail.

[3] Supply voltage ripple rejection is measured at the output, with a source impedance of Rs=0Ωat the input.

The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of

100 mV (RMS), which is applied to the positive supply rail.

5. Ordering information

Table 1. Quick reference data

=5V;T

amb

=25

C; R

Ω

; f = 1 kHz; V

MODE

= 0 V; measured in test circuit Figure 3; unless

otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage operating 2.2 9 18 V

Iqquiescent current RL=∞Ω [1] - 8 12 mA

Istb standby current VMODE =V

CC --10µA

Pooutput power THD+N = 10 % 1 1.2 - W

THD+N = 0.5 % 0.6 0.9 - W

THD+N = 10 %;

VCC =9V - 3.0 - W

THD+N total harmonic distortion-plus-noise Po= 0.5 W - 0.15 0.3 %

PSRR power supply rejection ratio [2] 50--dB

[3] 40--dB

Table 2. Ordering information

Type

number Package

Name Description Version

SA58631TK HVSON8 plastic thermal enhanced very thin small outline package;

no leads; 8 terminals; body 4 x 4 x 0.85 mm SOT909-1

Product data sheet Rev. 02 — 12 October 2007 3 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

6. Block diagram

7. Pinning information

7.1 Pinning

Fig 1. Block diagram of SA58631

SA58631

VCC

OUT−

IN+

IN−

GND

SVR

OUT+

002aac005

MODE

20 kΩ

STANDBY/MUTE LOGIC

Fig 2. Pin conﬁguration for HVSON8

002aac006

OUT−IN−

VCC

IN+

GNDSVR

OUT+MODE

Transparent top view

terminal 1

index area

SA58631TK

Product data sheet Rev. 02 — 12 October 2007 4 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

7.2 Pin description

8. Functional description

The SA58631 is a single-channel BTL audio ampliﬁer capable of delivering 3 W output

power to an 8 Ω load at THD+N = 10 % using a 9 V power supply. Using the MODE pin,

the device can be switched to standby and mute condition. The device is protected by an

internal thermal shutdown protection mechanism. The gain can be set within a range of

6 dB to 30 dB by external feedback resistors.

8.1 Power ampliﬁer

The power ampliﬁer is a Bridge Tied Load (BTL) ampliﬁer with a complementary

PNP-NPN output stage. The voltage loss on the positive supply line is the saturation

voltage of a PNP power transistor, on the negative side the saturation voltage of an NPN

power transistor. The total voltage loss is < 1 V. With a supply voltage of 9 V and an 8 Ω

loudspeaker, an output power of 3 W can be delivered to the load.

8.2 Mode select pin (MODE)

The device is in Standby mode (with a very low current consumption) if the voltage at the

MODE pin is greater than VCC −0.5 V, or if this pin is ﬂoating. At a MODE voltage in the

range between 1.5 V and VCC −1.5 V the ampliﬁer is in a mute condition. The mute

condition is useful to suppress plop noise at the output, caused by charging of the input

capacitor.

Table 3. Pin description

Symbol Pin Description

MODE 1 operating mode select (standby, mute, operating)

SVR 2 half supply voltage, decoupling ripple rejection

IN+ 3 positive input

IN−4 negative input

OUT−5 negative output terminal

VCC 6 supply voltage

GND 7 ground

OUT+ 8 positive output terminal

Product data sheet Rev. 02 — 12 October 2007 5 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

9. Limiting values

[1] AC and DC short-circuit safe voltage.

10. Thermal characteristics

[1] Thermal resistance is 28 K/W with DAP soldered to 32 cm2 (5 in2), 35 µm copper (1 ounce copper) heat

spreader.

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage operating −0.3 +18 V

VIinput voltage −0.3 VCC + 0.3 V

IORM repetitive peak output current - 1 A

Tstg storage temperature non-operating −55 +150 °C

Tamb ambient temperature operating −40 +85 °C

VP(sc) short-circuit supply voltage [1] -10 V

Ptot total power dissipation HVSON8 - 2.3 W

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-a) thermal resistance from junction to

ambient free air 80 K/W

9.7 cm2 (1.5 in2)

heat spreader [1] 32 K/W

32 cm2 (5 in2)

heat spreader [1] 28 K/W

Rth(j-sp) thermal resistance from junction to

solder point 5 K/W

Product data sheet Rev. 02 — 12 October 2007 6 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

11. Static characteristics

[1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output

offset voltage divided by RL.

[2] The DC output voltage with respect to ground is approximately 0.5 ×VCC.

12. Dynamic characteristics

[1] Gain of the ampliﬁer is 2 ×(R2 / R1) in test circuit of Figure 3.

[2] The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance

of RS=0Ω at the input.

[3] Supply voltage ripple rejection is measured at the output with a source impedance of Rs=0Ω at the input. The ripple voltage is a

sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.

[4] Supply voltage ripple rejection is measured at the output, with a source impedance of Rs=0Ω at the input. The ripple voltage is a

sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.

[5] Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, which includes noise.

Table 6. Static characteristics

=5V; T

amb

=25

C; R

Ω

; V

MODE

= 0 V; measured in test circuit Figure 3; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage operating 2.2 9 18 V

Iqquiescent current RL=∞Ω [1] - 8 12 mA

Istb standby current VMODE =V

CC --10µA

VOoutput voltage [2] - 2.2 - V

∆VO(offset) differential output voltage offset - - 50 mV

IIB(IN+) input bias current on pin IN+ - - 500 nA

IIB(IN−)input bias current on pin IN−- - 500 nA

VMODE voltage on pin MODE operating 0 - 0.5 V

mute 1.5 - VCC −1.5 V

standby VCC −0.5 - VCC V

IMODE current on pin MODE 0 V < VMODE <V

CC --20µA

Table 7. Dynamic characteristics

=5V; T

amb

=25

C; R

Ω

; f = 1 kHz; V

MODE

= 0 V; measured in test circuit Figure 3; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Pooutput power THD+N = 10 % 1 1.2 - W

THD+N = 0.5 % 0.6 0.9 - W

THD+N = 10 %; VCC =9V - 3.0 - W

THD+N total harmonic

distortion-plus-noise Po= 0.5 W - 0.15 0.3 %

Gv(cl) closed-loop voltage gain [1] 6 - 30 dB

∆Zidifferential input

impedance - 100 - kΩ

Vn(o) noise output voltage [2] - - 100 µV

PSRR power supply rejection

ratio [3] 50--dB

[4] 40--dB

Vooutput voltage mute condition [5] - - 200 µV

Product data sheet Rev. 02 — 12 October 2007 7 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

13. Application information

14. Test information

14.1 Test conditions

The junction to ambient thermal resistance, Rth(j-a) = 27.7 K/W for the HVSON8 package

when the exposed die attach paddle is soldered to 32 cm2(5 in2) area of 35 µm (1 ounce)

copper heat spreader on the demo PCB. The maximum sine wave power dissipation for

Tamb =25°C is:

Thus, for Tamb = +85 °C the maximum total power dissipation is:

The power dissipation versus ambient temperature curve (Figure 5) shows the power

derating proﬁles with ambient temperature for three sizes of heat spreaders. For a more

modest heat spreader using 9.7 cm2 (1.5 in2) area on the top side of the PCB, the

Rth(j-a) is 31.25 K/W. When the package is not soldered to a heat spreader, the Rth(j-a)

increases to 83.3 K/W.

Fig 3. Application diagram of SA58631 BTL differential output conﬁguration

002aac007

56 kΩ

SA58631

OUT−

IN+

IN−

GND

SVR OUT+

MODE 7

47 µF

11 kΩ

1 µF

VIRL

100 µF100 nF

VCC

Gain 2R2

-------

×=

150 25–

27.7

---------------------4.5 W=

150 85–

27.7

---------------------2.35 W=

Product data sheet Rev. 02 — 12 October 2007 8 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

14.2 BTL application

Tamb =25°C, VCC = 9 V, f = 1 kHz, RL=8Ω, Gv= 20 dB, audio band-pass 20 Hz to

20 kHz. The BTL diagram is shown in Figure 3.

The quiescent current has been measured without any load impedance. The total

harmonic distortion + noise (THD+N) as a function of frequency was measured with a

low-pass ﬁlter of 80 kHz. The value of capacitor C2 inﬂuences the behavior of PSRR at

low frequencies; increasing the value of C2 increases the performance of PSRR. Figure 6

shows three areas: operating, mute and standby. It shows that the DC switching levels of

the mute and standby respectively depends on the supply voltage level.

The following characterization curves show the room temperature performance for

SA58631 using the demo PCB shown in Figure 21. The 8 curves for power dissipation

versus output power (Figure 10 through Figure 17) as a function of supply voltage, heat

spreader area, load resistance and voltage gain show that there is very little difference in

performance with voltage gain; however, there are signiﬁcant differences with supply

voltage and load resistance.

The curves for THD+N versus output power (Figure 18) show that the SA58631 yields the

best power output using an 8 Ω load at 9 V supply. Under these conditions the part

delivers typically 3 W output power for THD+N = 10 %.

(1) No heat spreader.

(2) Top only heat spreader (9.7 cm2 (1.5 in2), 35 µm

(1 ounce) copper).

(3) Both top and bottom heat spreader (approximately

32 cm2 (5 in2), 35 µm (1 ounce) copper).

Fig 4. Output power versus supply voltage @

THD+N = 10 %; 32 cm2 (5 in2) heat spreader Fig 5. Power dissipation versus ambient temperature

2.0

4.0

6.0

(W)

VCC (V)

0 20.015.05.0 10.0

002aac008

RL = 8 Ω

16 Ω

002aac009

Tamb (°C)

0 15010050

2.0

3.0

1.0

4.0

5.0

(W)

(1)

(2)

(3)

Product data sheet Rev. 02 — 12 October 2007 9 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

Fig 6. VMODE versus VCC Fig 7. Iq versus VCC

VCC =5V; R

L=8Ω; Rs=0Ω; VI= 100 mV.

(1) Gv=30dB

(2) Gv=20dB

(3) Gv=6dB

Band-pass = 22 Hz to 22 kHz.

(1) VCC =3V

(2) VCC =5V

(3) VCC =12V

Fig 8. SVRR versus frequency Fig 9. Vo versus VMODE

VMODE

(V)

VCC (V)

0161248

002aac042

mute

operating

standby

(mA)

VCC (V)

020168124

002aac043

002aac044

f (Hz)

10 105

104

102103

−60

−40

−20

SVRR

(dB)

−80

(1)

(2)

(3)

VMODE (V)

10−1102

101

002aac045

(1) (2) (3)

10−6

10−5

10−4

10−3

10−2

10−1

(V)

Product data sheet Rev. 02 — 12 October 2007 10 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

Fig 10. Power dissipation versus output power;

RL= 4.0 Ω; Gv= 10 dB; 9.7 cm2 (1.5 in2)

heat spreader

Fig 11. Power dissipation versus output power;

RL= 4.0 Ω; Gv= 20 dB; 9.7 cm2 (1.5 in2)

heat spreader

Fig 12. Power dissipation versus output power;

RL= 8.0 Ω; Gv= 10 dB; 9.7 cm2 (1.5 in2)

heat spreader

Fig 13. Power dissipation versus output power;

RL= 8.0 Ω; Gv= 20 dB; 9.7 cm2 (1.5 in2)

heat spreader

Fig 14. Power dissipation versus output power;

RL=16Ω; Gv= 10 dB; 9.7 cm2 (1.5 in2)

heat spreader

Fig 15. Power dissipation versus output power;

RL=16Ω; Gv= 20 dB; 9.7 cm2 (1.5 in2)

heat spreader

2.0

3.0

1.0

4.0

5.0

(W)

Po (W)

0 2.41.80.6 1.2

002aac027

VCC = 9.0 V

7.5 V

5.0 V 2.0

3.0

1.0

4.0

5.0

(W)

Po (W)

0 2.41.80.6 1.2

002aac028

VCC = 9.0 V

7.5 V

5.0 V

1.0

2.0

3.0

(W)

Po (W)

0 4.03.01.0 2.0

002aac029

VCC = 9.0 V

5.0 V

7.5 V

1.0

2.0

3.0

(W)

Po (W)

0 4.03.01.0 2.0

002aac030

VCC = 9.0 V

5.0 V

7.5 V

002aac031

Po (W)

0 3.02.01.0

1.2

0.8

0.4

1.6

(W) VCC = 9.0 V

5.0 V

7.5 V

002aac032

Po (W)

0 3.02.01.0

1.2

0.8

0.4

1.6

(W) VCC = 9.0 V

5.0 V

7.5 V

Product data sheet Rev. 02 — 12 October 2007 11 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

Fig 16. Power dissipation versus output power;

RL= 8.0 Ω; Gv= 20 dB; 32 cm2 (5 in2)

heat spreader

Fig 17. Power dissipation versus output power;

RL=16Ω; Gv= 20 dB; 32 cm2 (5 in2)

heat spreader

1.0

2.0

3.0

(W)

Po (W)

0 4.03.01.0 2.0

002aac033

VCC = 9.0 V

5.0 V

7.5 V

002aac034

Po (W)

0 3.02.01.0

1.2

0.8

0.4

1.6

(W) VCC = 9.0 V

5.0 V

7.5 V

a. f = 1 kHz; RL =4Ωb. f = 1 kHz; RL =8Ω

c. f = 1 kHz; RL =16Ω

Fig 18. THD+N versus output power

002aac035

Po (W)

10−2101

110−1

10−1

101

102

THD+N

(%)

10−2

VCC = 5.0 V

9.0 V

7.5 V

002aac036

Po (W)

10−2101

110−1

10−1

101

102

THD+N

(%)

10−2

VCC = 5.0 V

9.0 V

7.5 V

10−210−1

10−1

101

102

10−2

002aac037

Po (W) 101

THD+N

(%) VCC = 5.0 V

9.0 V

7.5 V

Product data sheet Rev. 02 — 12 October 2007 12 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

a. RL =4Ωb. RL =8Ω

c. RL =16Ω

Fig 19. THD+N versus frequency

002aac038

f (kHz)

10−1101

0.8

1.2

0.4

1.6

2.0

THD+N

(%)

002aac039

f (kHz)

10−1101

0.4

0.8

1.2

THD+N

(%)

002aac040

f (kHz)

10−1101

0.4

0.6

0.2

0.8

1.0

THD+N

(%)

Product data sheet Rev. 02 — 12 October 2007 13 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

14.3 Single-ended application

Tamb =25°C; VCC = 7.5 V; f = 1 kHz; RL=8Ω; Gv= 20 dB; audio band-pass 20 Hz to

20 kHz.

The Single-Ended (SE) application diagram is shown in Figure 20.

The capacitor value of C3 in combination with the load impedance determines the low

frequency behavior. The total harmonic distortion + noise as a function of frequency was

measured with a low-pass ﬁlter of 80 kHz. The value of the capacitor C2 inﬂuences the

behavior of the PSRR at low frequencies; increasing the value of C2 increases the

performance of PSRR.

14.4 General remarks

The frequency characteristics can be adapted by connecting a small capacitor across the

feedback resistor. To improve the immunity of HF radiation in radio circuit applications, a

small capacitor can be connected in parallel with the feedback resistor (56 kΩ); this

creates a low-pass ﬁlter.

Fig 20. SE application circuit conﬁguration

002aac041

110 kΩ

SA58631

OUT−

IN+

IN−

GND

SVR OUT+

MODE 7

47 µF

11 kΩ

1 µF

VIRL

100 µF

100 nF

VCC

470 µF

Gain R2

-------

Product data sheet Rev. 02 — 12 October 2007 14 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

14.5 SA58631TK PCB demo

The application demo board may be used for evaluation in either BTL or SE conﬁguration

as shown in the schematics in Figure 3 and Figure 20. The demo PCB is laid out for the

32 cm2 (5 in2) heat spreader (total of top and bottom heat spreader area).

Fig 21. SA58631TK PCB demo

top layer bottom layer

SA58631TK

Rev3

100 µF

11 k

GND

VCC

VCC/2

GND

INPUT

002aac047

6.8 k

100 nF

OUT+

1 µF

47 µF

OUT−

GND

VCC

Product data sheet Rev. 02 — 12 October 2007 15 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

15. Package outline

Fig 22. Package outline SOT909-1 (HVSON8)

0.80.21 0.05

0.00

A1Eh

UNIT D(1) ye

2.4

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 4.1

3.9

2.35

2.05

4.1

3.9

3.25

2.95

0.4

0.3 0.05 0.1

DIMENSIONS (mm are the original dimensions)

SOT909-1 MO-229

E(1)

0.65

0.40

0.1

0.05

0 2 mm1

scale

SOT909-1

HVSON8: plastic thermal enhanced very thin small outline package; no leads;

8 terminals; body 4 x 4 x 0.85 mm

A(1)

max.

05-09-26

05-09-28

Note

1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.

terminal 1

index area

terminal 1

index area C

B A

eAC B

vMC wMy

detail X

A1c

exposed tie bar (4×)

Product data sheet Rev. 02 — 12 October 2007 16 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

16. Soldering

This text provides a very brief insight into a complex technology. A more in-depth account

of soldering ICs can be found in Application Note

AN10365 “Surface mount reﬂow

soldering description”

16.1 Introduction to soldering

Soldering is one of the most common methods through which packages are attached to

Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both

the mechanical and the electrical connection. There is no single soldering method that is

ideal for all IC packages. Wave soldering is often preferred when through-hole and

Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not

suitable for ﬁne pitch SMDs. Reﬂow soldering is ideal for the small pitches and high

densities that come with increased miniaturization.

16.2 Wave and reﬂow soldering

Wave soldering is a joining technology in which the joints are made by solder coming from

a standing wave of liquid solder. The wave soldering process is suitable for the following:

•Through-hole components

•Leaded or leadless SMDs, which are glued to the surface of the printed circuit board

Not all SMDs can be wave soldered. Packages with solder balls, and some leadless

packages which have solder lands underneath the body, cannot be wave soldered. Also,

leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,

due to an increased probability of bridging.

The reﬂow soldering process involves applying solder paste to a board, followed by

component placement and exposure to a temperature proﬁle. Leaded packages,

packages with solder balls, and leadless packages are all reﬂow solderable.

Key characteristics in both wave and reﬂow soldering are:

•Board speciﬁcations, including the board ﬁnish, solder masks and vias

•Package footprints, including solder thieves and orientation

•The moisture sensitivity level of the packages

•Package placement

•Inspection and repair

•Lead-free soldering versus PbSn soldering

16.3 Wave soldering

Key characteristics in wave soldering are:

•Process issues, such as application of adhesive and ﬂux, clinching of leads, board

transport, the solder wave parameters, and the time during which components are

exposed to the wave

•Solder bath speciﬁcations, including temperature and impurities

Product data sheet Rev. 02 — 12 October 2007 17 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

16.4 Reﬂow soldering

Key characteristics in reﬂow soldering are:

•Lead-free versus SnPb soldering; note that a lead-free reﬂow process usually leads to

higher minimum peak temperatures (see Figure 23) than a PbSn process, thus

reducing the process window

•Solder paste printing issues including smearing, release, and adjusting the process

window for a mix of large and small components on one board

•Reﬂow temperature proﬁle; this proﬁle includes preheat, reﬂow (in which the board is

heated to the peak temperature) and cooling down. It is imperative that the peak

temperature is high enough for the solder to make reliable solder joints (a solder paste

characteristic). In addition, the peak temperature must be low enough that the

packages and/or boards are not damaged. The peak temperature of the package

depends on package thickness and volume and is classiﬁed in accordance with

Table 8 and 9

Moisture sensitivity precautions, as indicated on the packing, must be respected at all

times.

Studies have shown that small packages reach higher temperatures during reﬂow

soldering, see Figure 23.

Table 8. SnPb eutectic process (from J-STD-020C)

Package thickness (mm) Package reﬂow temperature (°C)

Volume (mm3)

< 350 ≥ 350

< 2.5 235 220

≥ 2.5 220 220

Table 9. Lead-free process (from J-STD-020C)

Package thickness (mm) Package reﬂow temperature (°C)

Volume (mm3)

< 350 350 to 2000 > 2000

< 1.6 260 260 260

1.6 to 2.5 260 250 245

> 2.5 250 245 245

Product data sheet Rev. 02 — 12 October 2007 18 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

For further information on temperature proﬁles, refer to Application Note

AN10365

“Surface mount reﬂow soldering description”

17. Abbreviations

MSL: Moisture Sensitivity Level

Fig 23. Temperature proﬁles for large and small components

001aac844

temperature

time

minimum peak temperature

= minimum soldering temperature

maximum peak temperature

= MSL limit, damage level

peak

temperature

Table 10. Abbreviations

Acronym Description

BTL Bridge Tied Load

CMOS Complementary Metal Oxide Silicon

DAP Die Attach Paddle

ESD ElectroStatic Discharge

NPN Negative-Positive-Negative

PCB Printed-Circuit Board

PNP Positive-Negative-Positive

RMS Root Mean Squared

THD Total Harmonic Distortion

Product data sheet Rev. 02 — 12 October 2007 19 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

18. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

SA58631_2 20071012 Product data sheet - SA58631_1

Modiﬁcations: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Figure 4: changed incorrect character font

•Soldering information updated

SA58631_1 20060308 Product data sheet - -

Product data sheet Rev. 02 — 12 October 2007 20 of 21

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

19. Legal information

19.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

19.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

19.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of a NXP Semiconductors product can reasonably be expected to

result in personal injury, death or severe property or environmental damage.

NXP Semiconductors accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or applications and therefore

such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

19.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

20. Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors SA58631

3 W BTL audio ampliﬁer

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 12 October 2007

Document identifier: SA58631_2

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

21. Contents

1 General description. . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

5 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3

7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Functional description . . . . . . . . . . . . . . . . . . . 4

8.1 Power ampliﬁer. . . . . . . . . . . . . . . . . . . . . . . . . 4

8.2 Mode select pin (MODE) . . . . . . . . . . . . . . . . . 4

9 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5

10 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5

11 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6

12 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6

13 Application information. . . . . . . . . . . . . . . . . . . 7

14 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

14.1 Test conditions . . . . . . . . . . . . . . . . . . . . . . . . . 7

14.2 BTL application. . . . . . . . . . . . . . . . . . . . . . . . . 8

14.3 Single-ended application . . . . . . . . . . . . . . . . 13

14.4 General remarks. . . . . . . . . . . . . . . . . . . . . . . 13

14.5 SA58631TK PCB demo . . . . . . . . . . . . . . . . . 14

15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15

16 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

16.1 Introduction to soldering . . . . . . . . . . . . . . . . . 16

16.2 Wave and reﬂow soldering . . . . . . . . . . . . . . . 16

16.3 Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 16

16.4 Reﬂow soldering. . . . . . . . . . . . . . . . . . . . . . . 17

17 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 18

18 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 19

19 Legal information. . . . . . . . . . . . . . . . . . . . . . . 20

19.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20

19.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

19.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 20

19.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20

20 Contact information. . . . . . . . . . . . . . . . . . . . . 20

21 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21