DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA0912-250 Avionics LDMOS transistor Preliminary specification 2003 Oct 24 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PINNING - SOT502A FEATURES * High power gain PIN DESCRIPTION * Easy power control 1 drain * Excellent ruggedness 2 gate * Source on mounting base eliminates DC isolators, reducing common mode inductance. 3 source, connected to flange APPLICATIONS handbook, halfpage 1 * Avionics transmitter applications in the 960 to 1215 MHz frequency range such as Mode-S, TCAS and JTIDS, DME / TACAM. 3 2 DESCRIPTION Top view Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. MBK394 Fig.1 Simplified outline SOT502A. QUICK REFERENCE DATA Typical RF performance measured in common source class-AB circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band. Ths = 25 ; ZTH = 0.15 K/W; unless specified otherwise. VDS (V) PL (W) Gp (dB) Gp (dB) D (%) pD (dB) tr (ns) tf (ns) zth j-h (K/W) R () tp = 32 s; = 0.1 %; TCAS: 1030 to 1090 MHz 36 250 14.0 0.8 50 0 25 6 0.07 5 tp = 100 s; = 10 % 36 250 13.5 0.8 50 0.1 25 6 0.18 5 tp = 128 s; =2 %; Mode-S: 1030 to 1090 MHz 36 250 13.5 0.8 50 0.1 25 6 0.15 5 tp = 340s; =1 %; Mode-S: 1030 to 1090 MHz 36 250 13.5 0.8 50 0.2 25 6 0.20 5 tp = 3.3 ms; = 22 %; JTIDS: 960 to 1215 MHz 36 200 13.0 1.2 45 0.2 25 6 0.45 5 MODE OF OPERATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - 75 V VGS gate-source voltage - 22 V Ptot total power dissipation - 700 W Tstg storage temperature -65 +150 C Tj junction temperature - 200 C 2003 Oct 24 Ths 25 C; tp = 50 s; = 2 % 2 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 THERMAL CHARACTERISTICS SYMBOL Zth j-h PARAMETER thermal impedance from junction to heatsink CONDITIONS VALUE UNIT 0.18 K/W Ths = 25 C; note 1 Note 1. Thermal resistance is determined under RF operating conditions; tp = 100 s, = 10 %. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 3 mA 75 - - V VGSth gate-source threshold voltage VDS = 10 V; ID = 300 mA 4 - 5 V IDSS drain-source leakage current VGS = 0; VDS = 36 V - - 1 A IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 45 - - A IGSS gate leakage current VGS = 20 V; VDS = 0 - - 1 A gfs forward transconductance VDS = 10 V; ID = 10 A - 9 - S RDSon drain-source on-state resistance VGS = 9 V; ID = 10 A - 60 - m 2003 Oct 24 3 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 APPLICATION INFORMATION RF performance in common source class-AB circuit. Ths = 25C; ZTH = 0.15 K/W; unless specified otherwise. PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTES Supply voltage VDS - - 36 V - Frequency fR 960 - 1215 MHz - Output power PL 250 - - W tp = 100 s - = 10% Gain GP 12 13 - dB @ POUT = 250 W Drain efficiency D 40 50 - % tp = 100 s - = 10% Thermal impedance ZTH - - 0.2 K/W tp = 100 s - = 10% Rise time tR - 25 50 ns - Fall time tF - 6 25 ns - Pulse droop PD - 0.1 0.5 dB tp = 100 s - = 10% Spurious - - - -60 dBc VSWRL 2 : 1 Operating Temp. Ths - 55 +70 C - Ruggedness in class-AB operation The BLA0912-250 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 36 V; f = 960 to 1215 MHz at rated load power. Typical impedance values FREQUENCY (MHz) ZS () ZL () 960 0.89 -j1.70 1.53 -j1.13 1030 1.37 -j1.23 1.47-j0.99 1090 2.09 -j1.27 1.38 -j0.85 1140 2.40 -j1.97 1.30 -j0.71 1215 1.51 -j2.61 1.17 -j0.47 2003 Oct 24 4 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 18 15 Gp (dB) 55 D 13 D (%) (2) 14 45 GP (5) GP 16 (dB) (1) 12 (4) (3) 10 11 35 9 25 8 6 4 2 15 7 0 0 5 940 990 5 1040 1090 1140 1190 1240 f (MHz) 100 150 (3) f = 1090 MHz. (4) f = 1140 MHz. (5) f = 1215 MHz. Fig.3 Power gain as a function of load power; typical values. 60 300 (2) D (%) 50 (5) (1) (1) (5) 200 (2) 40 (4) (3) (3) 150 (4) 30 100 20 50 10 0 0 0 2 4 6 8 10 12 0 14 16 Pi (W) 50 100 150 200 250 300 PL (W) Ths = 25 C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 s; = 10%. (1) f = 960 MHz. Ths = 25 C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 s; = 10%. (1) f = 960 MHz. (2) f = 1030 MHz. (2) f = 1030 MHz. (3) f = 1090 MHz. (4) f = 1140 MHz. (3) f = 1090 MHz. (4) f = 1140 MHz. (5) f = 1215 MHz. (5) f = 1215 MHz. Load power as a function of Pi; typical values. 2003 Oct 24 250 300 PL (W) (1) f = 960 MHz. (2) f = 1030 MHz. Power gain and efficiency as functions of load power; typical values. PL (W) 250 Fig.4 200 Ths = 25 C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 s; = 10%. Ths = 25 C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 s; = 10%. Fig.2 50 Fig.5 5 Efficiency as a function of load power; typical values. Philips Semiconductors Preliminary specification Avionics LDMOS transistor C1 C2 C3 C4 BLA0912-250 C8 C9 C10 C5 R1 R2 C7 C6 Fig.6 Component layout for class-AB test circuit. List of components for class-AB test circuit (see Fig.6) COMPONENT DESCRIPTION VALUE C1 ATC 100B 1 nF C2 ATC 100A 22 pF C3 ATC 100B 1 nF C4 KEMET P/N T491D476M020AS 47 F C5 ATC 100A 56 pF C6 ATC 100A 22 pF C7 ATC 100A 47 pF C8 KEMET P/N T491D226M020AS 22 F C9 ATC 100B 1 nF C10 ATC 100A 22 pF R1 SMD 0805 51 R2 Philips 2333 156 14999 49.9 PCB Material Rodgers Duroid 6010. R = 10.2; d = 0.64 mm Note: Layout files available on internet in gerber and dxf format. 2003 Oct 24 6 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PCB INFO PCB Material: Rodgers Duroid 6010. ER = 10.2; Thickness 0.64 mm. L1 C1 L2 L3 C2 L4 C3 C4 L5 L6 C5 Input circuit. L1: C1: L2: L3: C2: L4: C3: 5 mm x 0.8 mm 1.2 mm x 3.5 mm cap. pad : 1 mm x 1mm (1x) curve: width 0.8 mm, angle 90, radius 0.8 mm (10x) vertical: 3.9 mm x 0.8 mm (2x) vertical: 9.4mm x 0.8 mm (3x) horizontal: 0.5 mm x 0.8 mm (4x) 3 mm x 2 mm 4 mm x 6.5 mm 5 mm x 1 mm 8.8 mm x 30 mm + 0.2 mm x 13 mm Output circuit. C4: L5: L6: C5: L7: L8: 2003 Oct 24 0.2 mm x 13 mm + 19 mm x 17.1 mm 2.5 mm x 2.3 mm 4 mm x 1 mm 3 mm x 6.6 mm curve: width 0.8 mm, angle 90, radius 0.8 mm (6x) vertical: 2.2 mm x 0.8 mm (2x) vertical: 6 mm x 0.8 mm (1x) horizontal: 1 mm x 0.8 mm (2x) 2.5 mm x 0.8 mm /4-line curve: width 1 mm, angle 90, radius 0.8 mm vertical: 5 mm x 1 mm horizontal: 19 mm x 1 mm tapered line: WI = 1 mm, L = 12 mm, angle = 60 7 L7 L8 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D1 0.045 0.785 0.035 0.745 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A 2003 Oct 24 0.210 0.133 0.170 0.123 8 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Oct 24 9 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA74 (c) Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/06/pp11 Date of release: 2003 Oct 24 Document order number: 9397 750 12224