IRF9530NSTRLPBF - INFINEON TECHNOLOGIES AG

IRF9530NSPbF

IRF9530NLPbF

VDSS -100V

RDS(on) 0.20

ID -14A

1 2016-5-27



Symbol Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ -10V  -14

ID @ TC = 100°C Continuous Drain Current, VGS @ -10V  -10

IDM Pulsed Drain Current  -56

PD @TA = 25°C Maximum Power Dissipation 3.8 W

PD @TC = 25°C Maximum Power Dissipation 79 W

Linear Derating Factor 0.53 W/°C

VGS Gate-to-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy (Thermally Limited)  250

IAR Avalanche Current  -8.4 A

EAR Repetitive Avalanche Energy  7.9 mJ

dv/dt Peak Diode Recovery dv/dt -5.0 V/ns

TJ Operating Junction and -55 to + 175 

TSTG Storage Temperature Range °C

Soldering Temperature, for 10 seconds (1.6mm from case) 300 

Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) 

Absolute Maximum Ratings

Thermal Resistance 

Symbol Parameter Typ. Max. Units

RJC Junction-to-Case ––– 1.9 °C/W

RJA Junction-to-Ambient ( PCB Mount, steady state)  ––– 40

D2 Pak

IRF9530NSPbF

G D S

Gate Drain Source

Benefits

 Advanced Process Technology

 Surface Mount (IRF9530NS)

 Low-profile through-hole(IRF9530NL)

 175°C Operating Temperature

 Fast Switching

 P-Channel

 Fully Avalanche Rated

 Lead-Free

Description

Fifth Generation HEXFET® Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized device

design that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in any

existing surface mount package. The D2Pak is suitable for high

current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface

mount application.

The through-hole version (IRF9530NL) is available for low-

profile applications.

TO-262 Pak

IRF9530NLPbF

Base part number Package Type Standard Pack

Form Quantity

IRF9530NLPbF TO-262 Tube 50 IRF9530NLPbF (Obsolete)

IRF9530NSPbF D2-Pak Tape and Reel Left 800 IRF9530NSTRLPbF

Orderable Part Number

HEXFET® Power MOSFET

IRF9530NS/LPbF

2 2016-5-27

Notes:

 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)

 starting TJ = 25°C, L = 7.0mH, RG = 25, IAS = -8.4A. (See fig. 12)

 I

SD -8.4A, di/dt -490A/µs, VDD V(BR)DSS, TJ  175°C.

 Pulse width 300µs; duty cycle  2%.

 Uses IRF9530N data and test conditions.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to

application note #AN-994

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA 

RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.20  VGS = -10V, ID = -8.4A 

VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA

gfs Forward Trans conductance 3.2 ––– ––– S VDS = -50V, ID = -8.4A

IDSS Drain-to-Source Leakage Current ––– ––– -25 µA VDS = -100V, VGS = 0V

––– ––– -250 VDS = -80V,VGS = 0V,TJ =150°C

IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -20V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

Qg Total Gate Charge ––– ––– 58

nC 

ID = -8.4A

Qgs Gate-to-Source Charge ––– ––– 8.3 VDS = -80V

Qgd Gate-to-Drain Charge ––– ––– 32 VGS = -10V See Fig.6 and 13 

td(on) Turn-On Delay Time ––– 15 –––

VDD = -50V

tr Rise Time ––– 58 ––– ID = -8.4A

td(off) Turn-Off Delay Time ––– 45 ––– RG= 9.1

tf Fall Time ––– 46 ––– RD= 6.2See Fig.6 

LS Internal Source Inductance ––– 7.5 ––– nH Between lead,

and center of die contact

Ciss Input Capacitance ––– 760 ––– VGS = 0V

Coss Output Capacitance ––– 260 ––– VDS = -25V

Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

IS Continuous Source Current ––– ––– -14

MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current ––– ––– -56 integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C,IS = -8.4A,VGS = 0V 

trr Reverse Recovery Time ––– 130 190 ns TJ = 25°C ,IF = -8.4A

Qrr Reverse Recovery Charge ––– 650 970 nC di/dt = -100A/µs 

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

pF 

IRF9530NS/LPbF

3 2016-5-27

Fig. 2 Typical Output Characteristics

Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance

vs. Temperature

Fig. 1 Typical Output Characteristics

IRF9530NS/LPbF

4 2016-5-27

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage



Fig 8. Maximum Safe Operating Area

Fig. 7 Typical Source-to-Drain Diode

Forward Voltage

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

IRF9530NS/LPbF

5 2016-5-27

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

IRF9530NS/LPbF

6 2016-5-27

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

Fig 12a. Unclamped Inductive Test Circuit

Fig 12b. Unclamped Inductive Waveforms

Fig 13b. Gate Charge Test Circuit

Fig 13a. Gate Charge Waveform

IRF9530NS/LPbF

7 2016-5-27



Fig 14. Peak Diode Recovery dv/dt Test Circuit for PChannel HEXFET® Power MOSFETs

IRF9530NS/LPbF

8 2016-5-27



Note: For the most current drawing please refer to Infineon’s web site www.infineon.com

D2-Pak (TO-263AB) Part Marking Information

D2-Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))

DATE CODE

YEAR 0 = 2000

WEEK 02

A = ASSEMBLY SITE CODE

RECTIFIER

INTERNATIONAL PART NUMBER

P = DESIGNATES LEAD - FREE

PRODUCT (OPTIONAL)

F530S

IN THE ASSEMBLY LINE "L"

ASSEMBLED ON WW 02, 2000

THIS IS AN IRF530S WITH

LOT CODE 8024 INTERNATIONAL

LOGO

RECTIFIER

LOT CODE

ASSEMBLY YEAR 0 = 2000

PART NUMBER

DATE CODE

LINE L

WEEK 02

F530S

LOGO

ASSEMBLY

LOT CODE

IRF9530NS/LPbF

9 2016-5-27

TO-262 Part Marking Information

TO-262 Package Outline (Dimensions are shown in millimeters (inches)

Note: For the most current drawing please refer to Infineon’s web site www.infineon.com

LOGO

RECTI FIER

INTERNATIONAL

LOT CODE

ASSEMBLY

LOGO

RECTI FIER

INTERNATIONAL

DATE CODE

WEEK 19

YEAR 7 = 1997

PART NUMBER

A = ASSEMBLY SITE CODE

PRODUCT ( OPTIONAL)

P = DESIGNATES LEAD- FREE

EXAMPLE: THIS IS AN IRL3103L

LOT CODE 1789

ASSEMBLY

PART NUMBER

DATE CODE

WEEK 19

LINE C

LOT CODE

YEAR 7 = 1997

ASSEMBLED ON WW 19, 1997

IN THE ASSEMBLY LI NE "C"

IRF9530NS/LPbF

10 2016-5-27

D2-Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))

Note: For the most current drawing please refer to Infineon’s web site www.infineon.com

TRR

FEED DIRECTION

1.85 (.073)

1.65 (.065)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

TRL

FEED DIRECTION

10.90 (.429)

10.70 (.421)

16.10 (.634)

15.90 (.626)

1.75 (.069)

1.25 (.049)

11.60 (.457)

11.40 (.449) 15.42 (.609)

15.22 (.601)

4.72 (.136)

4.52 (.178)

24.30 (.957)

23.90 (.941)

0.368 (.0145)

0.342 (.0135)

1.60 (.063)

1.50 (.059)

13.50 (.532)

12.80 (.504)

330.00

(14.173)

MAX.

27.40 (1.079)

23.90 (.941)

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

26.40 (1.039)

24.40 (.961)

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

IRF9530NS/LPbF

11 2016-5-27



Revision History

Date Comments

5/27/2016

 Updated datasheet with corporate template.

 Added disclaimer on last page.

 TO-262 package was removed from ordering information since it is EOL on page 1.

Qualification Information† 

Qualification Level Industrial

(per JEDEC JESD47F) ††

D2-Pak MSL1

(per JEDEC J-STD-020D) ††

TO-262 N/A

RoHS Compliant Yes

Moisture Sensitivity Level

† Qualification standards can be found at Inﬁneon’swebsitewww.inﬁneon.com

†† Applicable version of JEDEC standard at the time of product release.

TrademarksofInﬁneonTechnologiesAG

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