CLA50E1200HB
2 1
3
Single Thyristor
High Efficiency Thyristor
Part number
CLA50E1200HB
Backside: anode
TAV
T
V V1.27
RRM
50
1200
=
V=V
I=A
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms and Conditions of Usage
IXYS reserves the right to change limits, conditions and dimensions. 20150827hData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
CLA50E1200HB
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.32
R0.25 K/W
min.
50
VV
50T = 25°C
VJ
T = °C
VJ
mA4V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
125
P
tot
500 WT = 25°C
C
50
1200
forward voltage drop
total power dissipation
Conditions
1.60
T = 25°C
VJ
125
V
T0
V0.88T = °C
VJ
150
r
T
7.7 mΩ
V1.27T = °C
VJ
I = A
T
V
50
1.65
I = A100
I = A100
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1200T = 25°C
VJ
IA79
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
25
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
650
700
1.54
1.48
A
A
A
A
555
595
2.12
2.04
1200
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 150 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 150°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
150 A
T
P
G
= 0.3
di /dt A/µs;
G
=0.3
DRM
cr
V = ⅔ V
DRM
GK
1000
1.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
50 mA
T = °C-40
VJ
1.6 V
80 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
3 mA
V = ⅔ V
D DRM
150
latching current
T = °C
VJ
125 mA
I
L
25t µs
p
= 10
I A;
G
= 0.3 di /dt A/µs
G
= 0.3
holding current
T = °C
VJ
100 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.3 di /dt A/µs
G
= 0.3
V = ½ V
D DRM
turn-off time
T = °C
VJ
200 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 50 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 50 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
1300
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20150827hData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
CLA50E1200HB
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly Code
Zyyww
Assembly Line
XXXXXXXXX
C
L
A
50
E
1200
HB
Part description
Thyristor (SCR)
High Efficiency Thyristor
(up to 1200V)
Single Thyristor
TO-247AD (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.2
mounting torque
0.8
T
VJ
°C150
virtual junction temperature
-40
Weight g6
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
F
C
N120
mounting force with clip
20
I
RMS
RMS current
70 A
per terminal
125-40
TO-247
Similar Part Package Voltage class
CLA50E1200TC TO-268AA (D3Pak) (2) 1200
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
CLA50E1200HB 503748Tube 30CLA50E1200HBStandard
T
stg
°C150
storage temperature
-40
threshold voltage
V0.88
mΩ
V
0 max
R
0 max
slope resistance *
5.2
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20150827hData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
CLA50E1200HB
S
ØPØ P1 D2
D1
E1
4
1 2 3
L
L1
2x b2
3x b
b4
2x e
2x E2
D
E
Q
A
A2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
2 1
3
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20150827hData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
CLA50E1200HB
0 40 80 120 160
0
10
20
30
40
50
60
70
80
10 100 1000
1
10
100
1000
0.01 0.1 1
100
200
300
400
500
6
0
0
0.0 0.5 1.0 1.5 2.0 2.5
0
30
60
90
120
1
50
0.001 0.01 0.1 1 10
0.0
0.1
0.2
0.3
I
T
[A]
t [s]
V
T
[V]
2 3 4 5 6 7 8 9 011
100
1000
10
0
00
I
2
t
[A
2
s]
t [ms]
I
TSM
[A]
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
= 45°C
V
R
= 0 V
V
G
[V]
I
G
[mA]
I
T(AV)M
[A]
T
case
[°C]
Z
thJC
[K/W]
t [s]
Fig. 1 Forward characteristics Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
Fig. 3 I
2
t versus time (1-10 s)
Fig. 4 Gate voltage & gate current Fig. 6 Max. forward current at
case temperature
Fig. 7 Transient thermal impedance junction to case
t
gd
[µs]
I
G
[mA]
lim.
typ.
Fig. 5 Gate controlled delay time t
gd
0 20 40 60
0
20
40
60
80
100
I
T(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 50 100 150
T
amb
[°C]
T
VJ
= 125°C
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 125°C
1 10 100 1000 10000
0.1
1
10
4: P
GAV
= 0.5 W
5: P
GM
= 1 W
6: P
GM
= 10 W
1: I
GD
, T
VJ
= 150°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
R
thHA
0.4
0.6
0.8
1.0
2.0
4.0
1
23
45
6
i R
thi
(K/W) t
i
(s)
1 0.0075 0.0011
2 0.0170 0.0019
3 0.0570 0.0115
4 0.1580 0.1200
5 0.0105 0.5000
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20150827hData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved