
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
@TA
=
75 C
@T
J
=125 C
1N4001G thru 1N4007G
FEATURES
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.℃
1N
4003G
200
140
200
1N
4001G
50
35
50
1N
4007G
1000
700
1000
1N
4002G
100
70
100
1N
4006G
800
560
800
1N
4005G
600
420
600
1N
4004G
400
280
400
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C
1.0
30
1.1
5
50
T
J
Operating Temperature Range
-55 to +150
T
STG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 2)
R
0JA
45
C/W
C
J
Typical Junction Capacitance (Note 1)
10
pF
uA
V
A
A
V
UNIT
V
V
All Dimensions in millimeter
Max.
Min.
DO-41
Dim.
A
D
C
B
25.4
5.20
-
4.10
0.71
2.00 2.70
0.86
DO-41
A
C
D
A
B
CHARACTERISTICS SYMBOL
GLASS PASSIVATED RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.0 Amperes
SEMICONDUCTOR
LITE-ON
REV. 6, Sep-2012, KDDC01
C