SOT23 RF SCHOTTKY BARRIER DIODE
ISSUE 2 – NOVEMBER 1998
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Power Dissipation at Tamb
= 25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage VBR 3V
IR=10µA
Reverse Leakage Current IR500
100 nA
nA VR=2.5V
VR=1.0V
Forward Voltage VF250 350 mV IF=1mA
Capacitance CT0.9 pF VR=0 V, f=1MHz
Dynamic Resistance (1) RD17 ΩIF=10mA
(1) Sample Test.
RF CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS.
Voltage Sensitivity γ1.3 mV/µWf=2.4GHz; Power input= -20dBm
RL= 100kΩ ; Ibias= 0
Tangential Sensitivity TSS -40
-60 dBm
dBm f=2.4GHz; Video Bandwidth =10kHz
f=1.0GHz; RL= 1MΩ
Video Resistance Rv500 kΩf=2.4GHz; Power input=-20dBm
Ibias
= 0
DIODE PIN CONNECTION
PARTMARKING DETAIL - 510
1
3
2
1
3
ZSS1510
-45
Frequency (GHz)
Output Voltage v Frequency
0.1
Output Voltage v Input Power
and Load Impedance at 2.4 GHz
Input Power(dBm)
-40
0.1
0
Forward Voltage (mV)
Forward Current v Forward Voltage
10n
Input Power (dBm)
Output Voltage v Input Power at 2.4GHz
-40
0.1
Capacitance v Reverse Voltage
Reverse Voltage (V)
0
0
0.1
0.4
-30 -20 -10 0 10
1
10
100
1000
-35 -25 -15 -5 5 15
1
10
100
1000
1
10
100
1000
-30 -20 -10 0 10 123
1
10
100
100 200 300 400
100n
1µ
10µ
100µ
1m
10m
246810
0.5
0.6
0.7
0.8
0.9
-50° C
+25°C
+100°C
Zero Biased Tuned Fixture
Zero Bias Untuned 50ΩFixture
+100°C
10MΩ
+25°C
-50°C
1MΩ
10kΩ
100kΩ
Zero Bias Untuned 50ΩFixture
10MΩ
1MΩ
10kΩ
100kΩ
Zero Bias Untuned 50ΩFixture
10MΩ
1MΩ
10kΩ
100kΩZero Bias Untuned 50ΩFixture
Load Impedance 100kΩ
Output Voltage v Input Power at 2.4GHz
Input Power (dBm)
Load Impedance 100kΩ
Power input -15 dBm
+100°C
+25°C
-50°C
+150°C
TYPICAL CHARACTERISTICS
ZSS1510
SPICE MODEL PARAMETERS
IS 6.7E-08
N1.05
RS 10.6
AKF 0
XTI 2
EG 0.56
CJO 5.5E-13
VJ 0.4
M1
FC 0.5
BV 30.5
IBV 1E-03
NBV 85
IBVL 4E-06
NBVL 200
ZSS1510
EQUIVALENT CIRCUIT MODEL
