November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25C unless otherwise noted 2N7000 2N7002 NDS7002A Symbol Parameter VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS < 1 M) 60 V VGSS Gate-Source Voltage - Continuous 20 V 40 - Non Repetitive (tp < 50s) ID Maximum Drain Current - Continuous PD Maximum Power Dissipation - Pulsed o Derated above 25 C TJ,TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds Units 200 115 280 500 800 1500 400 200 300 3.2 1.6 -55 to 150 2.4 -65 to 150 300 mA mW mW/C C C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (c) 1997 Fairchild Semiconductor Corporation 312.5 625 417 C/W 2N7000.SAM Rev. A1 Electrical Characteristics T Symbol A = 25C unless otherwise noted Parameter Conditions Type Min 60 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 A All IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 2N7000 V TJ=125C VDS = 60 V, VGS = 0 V TJ=125C IGSSF IGSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse 2N7002 NDS7002A 1 A 1 mA 1 A 0.5 mA VGS = 15 V, VDS = 0 V 2N7000 10 nA VGS = 20 V, VDS = 0 V 2N7002 NDS7002A 100 nA VGS = -15 V, VDS = 0 V 2N7000 -10 nA VGS = -20 V, VDS = 0 V 2N7002 NDS7002A -100 nA V ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 A RDS(ON) 2N7000 0.8 2.1 3 2N7002 NDS7002A 1 2.1 2.5 1.2 5 1.9 9 1.8 5.3 1.2 7.5 1.7 13.5 2N7000 Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA TJ =125C VGS = 4.5 V, ID = 75 mA 2N7002 VGS = 10 V, ID = 500 mA TJ =100C VGS = 5.0 V, ID = 50 mA TJ =100C VGS = 10 V, ID = 500 mA NDS7002A TJ =125C VGS = 5.0 V, ID = 50 mA TJ =125C VDS(ON) Drain-Source On-Voltage VGS = 10 V, ID = 500 mA 2N7000 VGS = 4.5 V, ID = 75 mA VGS = 10 V, ID = 500mA 2N7002 VGS = 5.0 V, ID = 50 mA VGS = 10 V, ID = 500mA VGS = 5.0 V, ID = 50 mA NDS7002A 1.7 7.5 2.4 13.5 1.2 2 2 3.5 1.7 3 2.8 5 0.6 2.5 0.14 0.4 0.6 3.75 0.09 1.5 0.6 1 0.09 0.15 V 2N7000.SAM Rev. A1 Electrical Characteristics T Symbol A = 25oC unless otherwise noted Parameter Conditions Type Min Typ Max Units ON CHARACTERISTICS Continued (Note 1) ID(ON) gFS On-State Drain Current Forward Transconductance VGS = 4.5 V, VDS = 10 V 2N7000 75 600 VGS = 10 V, VDS > 2 VDS(on) 2N7002 500 2700 VGS = 10 V, VDS > 2 VDS(on) NDS7002A 500 2700 VDS = 10 V, ID = 200 mA 2N7000 100 320 VDS > 2 VDS(on), ID = 200 mA 2N7002 80 320 VDS > 2 VDS(on), ID = 200 mA NDS7002A 80 320 mA mS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn-On Time toff Turn-Off Time VDS = 25 V, VGS = 0 V, f = 1.0 MHz All 20 50 pF All 11 25 pF All 4 5 pF ns VDD = 15 V, RL = 25 , ID = 500 mA, VGS = 10 V, RGEN = 25 2N7000 10 VDD = 30 V, RL = 150 , ID = 200 mA, VGS = 10 V, RGEN = 25 2N700 NDS7002A 20 VDD = 15 V, RL = 25 , ID = 500 mA, VGS = 10 V, RGEN = 25 2N7000 10 VDD = 30 V, RL = 150 , ID = 200 mA, VGS = 10 V, RGEN = 25 2N700 NDS7002A 20 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 2N7002 115 NDS7002A 280 2N7002 0.8 NDS7002A 1.5 VGS = 0 V, IS = 115 mA (Note 1) 2N7002 0.88 1.5 VGS = 0 V, IS = 400 mA (Note 1) NDS7002A 0.88 1.2 mA A V Note: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. 2N7000.SAM Rev. A1 Typical Electrical Characteristics 2N7000 / 2N7002 / NDS7002A 2 3 V GS =4.0V 8.0 RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 9.0 7.0 1 .5 6.0 1 5.0 0 .5 4.0 I D , DRAIN-SOURCE CURRENT (A) VGS = 10V 3.0 0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5 .0 6 .0 2 7 .0 8 .0 1 .5 9 .0 10 1 0 .5 5 0 0 .8 1 .2 I D , DRA IN CURRENT (A) 1 .6 2 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 2 3 V GS = 10V I D = 500m A R DS(on) , NORMALIZED 1.75 1.5 1.25 1 0.75 0.5 -5 0 -2 5 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C) 125 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0 .4 Figure 1. On-Region Characteristics V GS = 10V 2 .5 TJ = 1 2 5 C 2 1 .5 25C 1 -55C 0 .5 0 150 0 Figure 3. On-Resistance Variation with Temperature 0 .4 0 .8 1 .2 I D , DRAIN CURRENT (A) 1 .6 2 Figure 4. On-Resistance Variation with Drain Current and Temperature 2 T J = -55C 25C 125C 1.6 1.2 0.8 0.4 0 0 2 V GS 4 6 8 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 10 Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1 .1 VDS = 10V ID , DRAIN CURRENT (A) 4 .5 2 .5 V DS = VGS 1 .0 5 I D = 1 mA 1 0 .9 5 0 .9 0 .8 5 0 .8 -50 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (C) 125 150 Figure 6. Gate Threshold Variation with Temperature 2N7000.SAM Rev. A1 Typical Electrical Characteristics (continued) 2N7000 / 2N7002 /NDS7002A 2 I D = 250A 1.05 1.025 1 0.975 0.95 0.925 -50 -25 V GS = 0V 1 1.075 IS , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.1 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (C) 125 0 .5 TJ = 1 2 5 C 0 .1 25C 0 .0 5 -5 5 C 0 .0 1 0 .0 0 5 0 .0 0 1 0 .2 150 0 .6 0 .8 1 1 .2 , BODY DIODE FORW A RD VOLTAGE (V) 1 .4 Figure 8. Body Diode Forward Voltage Variation with Figure 7. Breakdown Voltage Variation with Temperature 10 60 V DS = 2 5 V VGS , GATE-SOURCE VOLTAGE (V) 40 C iss 20 CAPACITANCE (pF) 0 .4 V SD C oss 10 5 C rss f = 1 MHz 2 V GS = 0V 8 6 ID = 5 0 0 m A 4 2 280m A 115m A 1 0 1 2 3 V DS 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50 Figure 9. Capacitance Characteristics 0 0 .4 0 .8 1 .2 Q g , GATE CHARGE (nC) t d(on) VGS R GEN tr RL t d(off) tf 90% 90% V OUT Output, Vout 10% 10% 90% DUT G Input, Vin S Figure 11. t off t on D 2 Figure 10. Gate Charge Characteristics VDD V IN 1 .6 Inverted 50% 50% 10% Pulse Width Figure 12. Switching Waveforms 2N7000.SAM Rev. A1 3 2 3 2 1 1 0.5 S( RD Lim ) ON 10 it 1m 10 ms 10 0m s 1s 0.1 0.05 V GS = 10V s s 10 s DC SINGLE PULSE T A = 25C 0.01 0u ID , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) Typical Electrical Characteristics (continued) 10 0.5 RD 1m 10 0.1 10 0.05 0.01 0m 0u s s ms s 1s 10 s DC VGS = 10V SINGLE PULSE T A = 25C 0.005 0.005 1 2 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 60 80 1 Figure 13. 2N7000 Maximum Safe Operating Area 3 2 1 I D , DRAIN CURRENT (A) S(O Lim N) it RD S(O N) Lim 10 1m 0.5 0.1 10 0.05 V GS = 10V 60 80 0u s s ms s 1s 10 s DC SINGLE PULSE T A = 25C 0.01 0m 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) Figure 14. 2N7002 Maximum Safe Operating Area it 10 2 0.005 1 2 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 60 80 Figure 15. NDS7000A Maximum Safe Operating Area TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 1 D = 0.5 0.5 R JA (t) = r(t) * R JA R JA = (See Datasheet) 0 .2 0.2 0.1 0.1 P(pk) 0.05 t1 0.05 0 .02 Single Pulse 0.02 0.01 0.0001 0.001 t2 TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2 0.01 0.01 0.1 t 1, TIME (sec) 1 10 100 300 Figure 16. TO-92, 2N7000 Transient Thermal Response Curve r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0 .2 0.1 0.05 R JA (t) = r(t) * R JA R JA = (See Datasheet) 0.1 0 .0 5 0 .0 2 P(pk) 0 .0 1 t1 0.01 t2 Single Pulse TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve 2N7000.SAM Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G