DMN26D0UFB4
Document number: DS31775 Rev. 12 - 2
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DMN26D0UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summa r y
BVDSS RDS(on) ID
TA = +25°C
20V
3.0Ω @ VGS = 4.5V
240mA
6.0Ω @ VGS = 1.8V
180mA
Description
This new generation MOSFET is designed to minimize the on-
state
resistance (RDS(ON)
) and yet m aintain superior s witching performance,
making it ideal for high-effici enc y power management applications.
Applications
• DC-DC Converters
• Power Management Functions
Features an d Benef its
• N-Channel MOSFET
• Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Sm al l Surfac e Mount Package, 0. 4mm Maximum Package
Height
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimon y Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X2-DFN1006-3
• Case Material: Molded Plast ic, “Green” Molding Com pound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connecti ons: See Diagram
• Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.001 grams (Approximate)
Ordering Information (Note 4)
Case
Packaging
X2-DFN1006-3
3,000/Tape & Reel
X2-DFN1006-3
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU D irecti v e 200 2/95/EC (Ro H S) & 20 11/ 6 5/E U (R oHS 2) com pli a nt.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead -free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DS
G
ESD PROTECTED
X2-DFN1006-3
Bottom View
Equivalent Circui t
Top View
e4
DMN26D0UFB4
Document number: DS31775 Rev. 12 - 2
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DMN26D0UFB4
Marking Information
DMN26D0UFB4-7
DMN26D0UFB4-7B
Maximum Ratings (@TA = +25°C, unless otherwise specified. )
Characteristic
Symbol
Value
Unit
Drain Source Voltage V
DSS
20 V
Gate-Source Voltage
VGSS
±10
V
Continuous Drain Current (Note 5) VGS = 4.5V Steady
State TA = +25°C
TA = +70°C
ID 240
190 mA
Continuous Drain Current (Note 5) VGS = 1.8V Steady
State TA = +25°C
T
A
= +70°C ID 180
140 mA
Pulsed Drain Current - T
P
= 10µs I
DM
805 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Not e 5) @T
A
= +25°C P
D
350 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
357
°C/W
Operating and Storage Tem perature Range
TJ, TSTG
-55 to +150
°C
Note: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
M1 = Part Marking Code
M1
Top View
Dot Denotes Drain Side
M1
M1
M1
M1
M1
M1
M1
M1
Top View
Bar Denotes Gate and Source Side
M1
M1
Top View
Bar Denotes Gate and Source Side
M1
M1
M1
From date code 1527 (YYWW),
this changes to:
DMN26D0UFB4
Document number: DS31775 Rev. 12 - 2
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DMN26D0UFB4
Electrical Characteristics (@TA = +25°C, unless otherwi se specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CH ARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
20
V
VGS = 0V, ID = 100µA
Zero Gate Voltage Drain Current @ TC = +25°C
IDSS
500 nA
VDS = 20V, VGS = 0V
Gate-Body Leakage IGSS ±1
±100 µA
nA VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
ON CHARACTERISTI CS (Note 6)
Gate Threshold Voltage VGS(TH) 0.6 0.9 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance RDS(ON)
1.8
2.5
3.4
4.7
3.0
4.0
6.0
10.0
Ω
VGS = 4.5 V, ID = 100mA
VGS = 2.5 V, ID = 50mA
VGS = 1.8 V, ID = 20mA
V
GS
= 1.5V, I
D
= 1 0mA
Forward Transconduct ance |Y
fs
| 180 242 mS V
DS
= 10V, I
D
= 0.1A
Source-Drain Diode Forward Volt age
V
SD
0.5
1.4
V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CH ARACTERISTICS (Note 7)
Input Capacitance
Ciss
14.1
28.2
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
2.9 5.8 pF
Reverse Transfer Capacitance
Crss
1.6 3.2 pF
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
tD(ON)
3.8
ns VGS = 4.5 V, VDD = 10V
ID = 200mA, RG = 2.0Ω
Rise Time
tR
7.9
Turn-Off Delay Time
tD(OFF)
13.4
Fall Time
tF
15.2
Notes: 6. Short duration pulse test used to minimize self-heat in g effe c t.
7. Guaranteed by design. Not subject to product testing.
00.5 11.5 22.5 3
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I , DRAIN CURRENT (A)
D
V = 2.0V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8V
GS
V = 2.5V
GS
V = 1.5V
GS
0
0.5
1
1.5
2
2.5
3
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
0
0.1
0.2
0.3
0.4
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 10V
DS
I
D
, DRAIN CURRENT (A)
DMN26D0UFB4
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1
2
3
4
5
0.01 0.1 1
Fig. 3 Typical On-Resistance
vs. Drai n Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON) Ω
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
Fig. 5 On-Resistance Variation with Tem perat ure
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (
癈)
A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = 2.5V
I = 150mA
GS
D
V = 4.5V
I = 500mA
GS
D
Fig. 6 On-Resistance Variation with Temperat ure
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (
癈)
A
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
R , DRAIN-SOURCE
ON-RESISTANCE ( )
DSON
Ω
V = 4.5V
I = 500mA
GS
D
V = 2.5V
I = 150mA
GS
D
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
S
T = 25°C
A
I
S
, SOURCE CURRENT (A)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(
T
H
)
I = 1mA
D
I = 250µA
D
VGS(TH), GATE THRESHOLD VOLTAGE (V)
0.01
0.1
1
I , DRAIN CURRENT (A )
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0
1
2
3
4
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
(oC)
(oC)
DMN26D0UFB4
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Fig. 9 Typical Total Capac itance
V , DRAIN-SOURCE VOLT AGE (V)
DS
0 4 8 12 16
20
0
5
10
15
20
C, CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
0
2
4
6
8
10
12
14
16
18
20
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
V , DRAIN-SOUR CE VOLTAGE (V)
DS
0.1
10
100
1,000
10,000
I
,
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(
n
A
)
D
S
S
1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
I
DSS
, LEAKAGE CURRENT (nA)
0.001
0.01
0.1
1
r(t), TRANSIENT THERMAL RESISTANCE
0.000001 0.001 0.01 0.1 110 100 1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00010.00001
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
12
θ
R (t) = r (t) *
θJA
R
R = 278
癈/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
278oC/W
DMN26D0UFB4
Document number: DS31775 Rev. 12 - 2
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DMN26D0UFB4
Package Ou t lin e Dim en sio ns
Please see http://www.diodes.com/package-outlines.html for the latest version.
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
X2-DFN1006-3
Dim
Min
Max
Typ
A
0.40
A1
0.00
0.05
0.03
b
0.10
0.20
0.15
b2
0.45
0.55
0.50
D
0.95
1.05
1.00
E
0.55
0.65
0.60
e
-
-
0.35
L1
0.20
0.30
0.25
L2
0.20
0.30
0.25
L3
-
-
0.40
z
0.02
0.08
0.05
All Dimensions in mm
Dimensions
Value (in mm)
C
0.70
G1
0.30
G2
0.20
X
0.40
X1
1.10
Y
0.25
Y1
0.70
L3 L1L2
e
b
D
E
A
z
b2
A1
Seating Plane
Pin #1 ID
C
Y1
X1
X
G2
Y
G1
DMN26D0UFB4
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