DM2G50SH12A - MagnaChip Semiconductor

DM2G50SH12A

Mar. 2008

1/6

Absolute Maximum Ratings@ Tj=25℃(Per Leg)

Symbol Parameter Ratings UnitConditions

Equivalent Circuit

Equivalent Circuit and Package

Package : 7DM-1 Series

Please see the package out line information

VCES

VGES

IC

ICM (1)

IF

IFM

TSC

PD

Tj

Tstg

Viso

1200

±20

75

50

100

50

100

10

400

-40 ~ 150

-40 ~ 125

2500

4.0

2.0

V

A

uS

W

℃

V

N.m

-

TC= 25℃

TC= 80℃

-

TC= 100℃

-

TC= 100℃

TC= 25℃

-

AC 1 minute

-

Description

DAWIN’S IGBT 7DM-1 Package devices are optimized to reduce losses and

switching noise in high frequency power conditioning electrical systems.

These IGBT modules are ideally suited for power inverters, motors drives

and other applications where switching losses are significant portion of the

total losses.

Features

☞High Speed Switching

☞BVCES = 1200V

☞Low Conduction Loss : VCE(sat) = 1.8 V (typ.)

☞Fast & Soft Anti-Parallel FWD

☞Short circuit rated : Min. 10uS at TC=100℃

☞Reduced EMI and RFI

☞Isolation Type Package

Applications

Motor Drives, High Power Inverters, Welding Machine,

Induction Heating, UPS , CVCF, Robotics , Servo Controls

6

7

5

4

①②③

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current

Pulsed Co llec tor C u rrent

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Isolation Voltage

Mounting screw Torque :M6

Power terminals screw Torque :M5

High Power SPT+& Lugged Type IGBT Module

DM2G50SH12A

Mar. 2008

2/6

Electrical Characteristics of IGBT @ TC=25℃(unless otherwise specified)

Symbol Parameter Values Unit

Conditions Min. Typ. Max.

C - E Breakdown Voltage

Temperature Coef f. of

Breakdown Voltage

G - E threshold voltage

Collector cutoff Current

G - E leakage Current

Collector to Emitter

saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn on delay time

Turn on rise time

Turn off delay time

Turn off fall time

Turn on Switching Loss

Turn off Switching Loss

Total Switching Loss

Short Circuit Withstand Time

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

1200

-

5

-

10

-

0.6

-

1.8

2.0

4.29

0.3

0.2

270

60

480

60

6.0

3.7

9.7

-

610

35

240

-

8

1.0

±200

2.5

-

V

V/℃

V

mA

nA

V

nF

nS

mJ

uS

nC

VGE = 0V , IC= 1.0mA

IC=2.0mA , VCE = VGE

VCE = 1200V , VGE = 0V

VGE =±20V

IC=50A, VGE=15V @TC= 25℃

IC=50A, VGE=15V @TC=100℃

VGE = 0V , f = 1㎒

VCE = 25V

VCC = 600V , IC= 50A

VGE = ±15V

RG= 18.0Ω

Inductive Load=60nH

VCC = 600V, VGE = ±15V

RG=18.0Ω@TC= 100℃

VCC = 600V

VGE =±15V

IC= 50A

BVCES

ΔBVCES/

ΔTJ

VGE(th)

ICES

IGES

VCE(sat)

Cies

Coes

Cres

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tsc

Qg

Qge

Qgc

DM2G50SH12A

Mar. 2008

3/6

Electrical Characteristics of FRD @ TC=25℃(unless otherwise specified)

Symbol Parameter Values UnitConditions Min. Typ. Max.

IF=50A

IF=50A, VR=600V

di/dt= -200A/uS

Tc =25℃

Tc =100℃

Tc =25℃

Tc =100℃

Tc =25℃

Tc =100℃

Tc =25℃

Tc =100℃

Diode Forward Voltage

Diode Reverse

Recovery Time

Diode Peak Reverse

Recovery Current

Diode Reverse

Recovery Charge

VFM

trr

Irr

Qrr

-

1.5

1.6

120

140

20

30

1100

6300

2.5

-

V

nS

A

nC

Thermal Characteristics and Weight

Symbol Parameter Values UnitConditions Min. Typ. Max.

Junction-to-Case(IGBT Part, Per 1/2 Module)

Junction-to-Case(DIODE Part, Per 1/2 Module)

Case-to-Sink ( Conductive grease applied)

Weight of Module

℃/W

g

-

0.3

0.6

-

200

-

0.05

-

RθJC

RθCS

Weight

DM2G50SH12A

Mar. 2008

4/6

0

10

20

30

40

50

60

0.1 1 10 100

0

4

8

12

16

20

0 4 8 12 16 20

0

4

8

12

16

20

048121620

0

25

50

75

100

125

150

01234

0

25

50

75

100

125

150

0246

0

25

50

75

100

125

150

0246

Performance Curves

10V

Common Emitter

TC=25℃20V 15V

Common Emitter

TC=125℃

TC=25℃

Duty cycle = 50%

TC=125℃

Power Dissipation = 55W

Common Emitter

TC=25℃

100A

50A

IC=25A

Common Emitter

TC=125℃

100A

50A

IC=25A

10V

12V

VGE=8V

12V

15V

20V

VGE=8V

Collector – Emitter Voltage, VCE [V]

Collector Current, IC[A]

Collector – Emitter Voltage, VCE [V]

Collector Current, IC[A]

Collector – Emitter Voltage, VCE [V]

Collector Current, IC[A]

Gate – Emitter Voltage, VGE [V]

Collector – Emitter Voltage, VCE [V]

Gate – Emitter Voltage, VGE [V]

Frequency [KHz]

Load Current [A]

Fig 1. Typical Output characteristics

Fig 3. Typical Saturation Voltage characteristics Fig 4. Load Current vs. Frequency

Fig 5. Typical Saturation Voltage vs. VGE

Fig 2. Typical Output characteristics

Fig 6. Typical Saturation Voltage vs. VGE

DM2G50SH12A

Mar. 2008

0

5

10

15

20

0 0.1 0.2 0.3 0.4 0.5 0 .6

0.1

1

10

0 5 10 15 20 25 30 35

Collector – Emitter Voltage, VCE [V]

Capacitance [ pF ]

Common Emitter

VGE=0V, f=1MHZ

TC=25℃

Cies

Coes

Cres

Gate Charge, Qg [nC]

Gate – Emitter Voltage, VGE [V]

Common Emitter

VCE=600V, IC=50A

TC=25℃

5/6

Fig 7. Capacitance characteristics Fig 8. Gate Charge characteristics

Fig 9. rated Current vs. Case Temperature Fig 10. Power Dissipation

vs. Case Temperature

VCC=600V VCC=800V

Tc [ ℃]

75

60

45

30

15

00 20 40 60 80 100 120 140 160

Ic [ A ]

TJ= 150℃

VGE ≥15V

Tc [ ℃]

500

400

300

200

100

00 20 40 60 80 100 120 140 160

PD[ W ]

TJ≤150℃

PD= f(Tc)

0

25

50

75

100

125

150

01234

0.001

0.01

0.1

1

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

Rectangular Pulse Duration Time [sec]

Thermal Response Zthjc [ /W]

℃

IGBT :

DIODE :

TC=25℃

Forward Drop Voltage, VF[V]

Forward Current, IF[A]

TC=125℃

TC=25℃

Fig 11. Transient Thermal Impedance Fig 12. Forward characteristics

DM2G50SH12A

Mar. 2008

Package Out Line Information

6/6

7DM-1

1

2

3

80±0.3

23±0.5 23±0.5

93±0.3 M5 DP9

Φ6.4 ±0.2

Mounting Hole

4±0.3

17±0.5

LABEL PLATE

6±0.2 16.5±0.2

1±0.05

MAX 31

22±0.5

90±0.5

Dimensions in mm

6.1±0.5

32±0.5

12±0.5

35±0.5

5

4

6

7

18.5±0.2

12±0.2

15.5±0.2

14.5±0.3

35±0.5

5±0.3

4±0.3

D W

2.8±0.05

9.8±0.2

Bolt Depth