© Semiconductor Components Industries, LLC, 2011
February, 2011 − Rev. 5
1Publication Order Number:
MMBFU310LT1/D
MMBFU310LT1G
JFET Transistor
N−Channel
Features
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage VDS 25 Vdc
Gate−Source Voltage VGS 25 Vdc
Gate Current IG10 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Total Device Dissipation FR−5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA 556 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
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MARKING DIAGRAM
SOT−23 (TO−236AB)
CASE 318−08
STYLE 10
2 SOURCE
3
GATE
1 DRAIN
1
2
3
Device Package Shipping†
ORDERING INFORMATION
MMBFU310LT1G SOT−23
(Pb−Free)
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
M6C M G
G
M6C = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
MMBFU310LT1G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage − (IG = −1.0 mAdc, VDS = 0) V(BR)GSS −25 −Vdc
Gate 1 Leakage Current − (VGS = −15 Vdc, VDS = 0) IG1SS − −150 pA
Gate 2 Leakage Current − (VGS = −15 Vdc, VDS = 0, TA = 125°C) IG2SS − − 150 nAdc
Gate Source Cutoff Voltage − (VDS = 10 Vdc, ID = 1.0 nAdc) VGS(off) −2.5 −6.0 Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current − (VDS = 10 Vdc, VGS = 0) IDSS 24 60 mAdc
Gate−Source Forward Voltage − (IG = 10 mAdc, VDS = 0) VGS(f) −1.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance − (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |Yfs| 10 18 mmhos
Output Admittance − (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |yos|−250 mmhos
Input Capacitance − (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Ciss −5.0 pF
Reverse Transfer Capacitance − (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Crss −2.5 pF
70
60
50
40
30
20
-5.0 -4.0 -3.0 -2.0 -1.0 0
ID - VGS, GATE-SOURCE VOLTAGE (VOLTS)
10
0
70
60
50
40
30
20
10
, DRAIN CURRENT (mA)ID
IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
VDS = 10 V
IDSS
+25°C
TA = -55°C
+25°C
+25°C
-55°C
+150°C
+150°C
, SATURATION DRAIN CURRENT (mA)IDSS
Figure 1. Drain Current and Transfer
Characteristics vs Gate−Source Voltage
VGS, GATE-SOURCE VOLTAGE (VOLTS)
5.0 4.0 3.0 2.0 1.0 0
35
30
25
20
15
10
5.0
0
, FORWARD TRANSCONDUCTANCE (mmhos)Y
fs
Figure 2. Forward Transconductance
vs Gate−Source Voltage
VDS = 10 V
f = 1.0 MHz
TA = -55°C
+25°C
+150°C+25°C
-55°C
+150°C
MMBFU310LT1G
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3
ID, DRAIN CURRENT (mA)
100 k
10 k
1.0 k
100
1.0 k
100
10
1.0
0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
, FORWARD TRANSCONDUCTANCE ( mhos)Yfs μ
, OUTPUT ADMITTANCE ( mhos)Y
os μ
VGS(off) = -2.3 V =
VGS(off) = -5.7 V =
Figure 3. Common−Source Output Admittance
and Forward Transconductance vs Drain Current
Yfs Yfs
Yos
VGS, GATE SOURCE VOLTAGE (VOLTS)
5.0 4.0 3.0 2.0 1.0 06.07.08.09.010
CAPACITANCE (pF)
10
7.0
4.0
1.0
0
120
96
72
48
24
0
, ON RESISTANCE (OHMS)RDS
RDS
Cgs
Cgd
Figure 4. On Resistance and Junction
Capacitance vs Gate−Source Voltage
|Y11|, |Y21|, |Y22 | (mmhos)
Y12 (mmhos)
30
24
18
12
6.0
01000100 200 300 500 700
f, FREQUENCY (MHz)
3.0
2.4
1.8
1.2
0.6
|S21|, |S11|
0.45
0.39
0.33
0.27
0.21
0.15
0.85
0.79
0.73
0.67
0.61
0.55
|S12|, |S22|
0.060
0.048
0.036
0.024
0.012
1.00
0.98
0.96
0.94
0.92
0.90
1000100 200 300 500 700
f, FREQUENCY (MHz)
Figure 5. Common−Gate Y Parameter
Magnitude vs Frequency
Figure 6. Common−Gate S Parameter
Magnitude vs Frequency
VDS = 10 V
ID = 10 mA
TA = 25°CY11
Y21
Y22
Y12
S22
S21
S11
S12
VDS = 10 V
ID = 10 mA
TA = 25°C
f, FREQUENCY (MHz)
q21, q11
50°
40°
30°
20°
10°
0°
180°
170°
160°
150°
140°
130°
q12, q22
-20°
-40°
-80°
-120°
-160°
-200°
-20°
-60°
-100°
-140°
-180°
87°
86°
85°
84°
83°
82°
1000100 200 300 500 700
Figure 7. Common−Gate Y Parameter
Phase−Angle vs Frequency
f, FREQUENCY (MHz)
q11, q12
120°
100°
80°
60°
40°
20°
-20°
-40°
-60°
-80°
-100°
-120°
q21, q22
0
-40°
-80°
-20°
-60°
-100°
1000100 200 300 500 700
Figure 8. S Parameter Phase−Angle
vs Frequency
q22
q21
q12
q11 VDS = 10 V
ID = 10 mA
TA = 25°C
q11
q21 q22
q21
q11
q12
VDS = 10 V
ID = 10 mA
TA = 25°C
MMBFU310LT1G
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4
PACKAGE DIMENSIONS
SOT−23 (TO−236AB)
CASE 318−08
ISSUE AN
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBFU310LT1/D
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