13PD100-ST, -SMA, -FC, -SC
829 Flynn Road, Camarillo, CA 93012 • Phone: (805) 445-4500 • Fax: (805) 445-4502
Email: customerservice@telcomdevices.com • Website: www.telcomdevices.com
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The 13PD100-ST, an InGaAs photodiode with a 100µm-diameter photosensitive region packaged in a TO-46
header and aligned in an AT&T ST active device mount, is the largest standard device enabling a 1Ghz
frequency cutoff. Planar semiconductor design and dielectric passivation provide superior low noise
performance. Reliability is assured by hermetic sealing and 100% purge burn-in (200°C, 15 hours, Vr =
20V). The ST receptacle is suitable for bulkhead and PC board mounting.
High Speed InGaAs p-i-n Photodiode
Features:
• Planar Structure
• Dielectric Passivation
• 100% Purge Burn-in
• High Responsivity
Operating Voltage
Dark Current
Capacitance
Responsivity
Rise/Fall
Frequency Response
Volts
nA
pF
A/W
ns
GHz
–20
2
1.9
0.5
0.5
1.15
0.8
1
0.65
–5V
–5V
1300nm
(–3dB)
Parameters Test Conditions Minimum
DEVICE CHARACTERISTICS
Typical Maximum Units
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
30 Volts
10mA
500µA
–40°C to +85°C
–40°C to +85°C
250°C
ABSOLUTE MAXIMUM RATINGS
