ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB91018AAS/A3
APPROVALS
lUL recognised, File No. E91231
DESCRIPTION
The H11F_ series are optically coupled isolators
consisting of infrared light emitting diode and a
symmetrical bilateral silicon photodetector. The
detector is electrically isolated from the input and
performs like an ideal isolated FET designed for
distortion-free control of low level ac and dc
analog signals.The H11F_ series are mounted in a
standard 6pin dual in line plastic package.
FEATURES
ll Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
As a remote variable resistor
l≤100Ω to ≥300MΩ
l≥ 99.9% Linearity
l≤15 pF Shunt Capacitance
l≥100GΩ I/O Isolation Resistance
As an Analog Signal Switch
lExtremely low Offset Voltage
l60V pk-pk Signal Capability
lNo Charge Injection or Latchup
lton, toff ≤15µs
APPLICATIONS
As a remote variable resistor
lIsolated variable attenuator
lAutomatic gain control
lActive filter fine tuning / band switching
H11F1, H11F2, H11F3
Dimensions in mm
2.54
7.0
6.0
8.9
max.
0.5
min. 3.9
3.1
5.1
max.
15°
Max
0.25
0.48
8.3 max.
OPTION G
8.3 max
SURFACE MOUNT
OPTION SM
10.16
10.2
9.5
0.26
1.2
0.6 1.4
0.9
1
3 4
6
2 5
APPLICATIONS (cont.)
As an Analog Signal Switch
lIsolated sample and hold circuit
lMultiplexed, optically isolated A/D conversion
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 100mW
OUTPUT TRANSISTOR
Breakdown Voltage
H11F1, H11F2 ±30V
H11F3 ±15V
Detector Current (continuous) ±100mA
Power Dissipation 300mW
POWER DISSIPATION
Total Power Dissipation 350mW
PHOTON COUPLED BILATERAL
ANALOG FET
DB91018-AAS/A3
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.1 1.75 VIF = 16mA
Reverse Voltage (VR)5VIR = 10µA
Reverse Current (IR)10 µAVR = 5V
Output Breakdown Voltage - V( BR )46 (Note 2)
(either H11F1, H11F2 30 VI46 = 10µA,IF = 0
polarity) H11F3 15 VI46 = 10µA,IF = 0
Off-state Dark Current - I46 50 nA V46 = 15V, IF = 0,
TA= 25°C
50 µAV46 = 15V, IF = 0,
TA = 100°C
Off-state Resistance - r46 300 ΜΩ V46 = 15V, IF = 0
Capacitance - C46 15 pF V46 = 0, IF = 0,
f = 1 MHz
Coupled On-state Resistance - r46 (Note 2)
H11F1200 Ω
H11F2330 ΩIF = 16mA, I46 = 100µA
H11F3470 Ω
On-state Resistance - r64 (Note 2)
H11F1200 Ω
H11F2330 ΩIF = 16mA, I64 = 100µA
H11F3470 Ω
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 1011 ΩVIO = 500V (note 1)
Input-output Capacitance Cf 2pF VIO= 0, f =1MHz
Turn-on Time ton 25 µsIF= 16mA, V46 = 5V,
Turn-off Time toff 25 µsRL = 50Ω
Resistance, non-linearity and asymmetry 0.1 %IF= 16mA, f = 1kHz
I46= 25µA RMS
7/12/00
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
DB91018-AAS/A3
7/12/00
0 50 100 150 200 250 300 350
D.C. bias voltage V46 (mV)
Change in resistance
∆
r (on) (%)
Resistive non-linearity vs.
D.C. Bias
-50 -25 0 25 50 75 100
Ambient temperature TA ( °C )
1
Normalized on-state resistance r (on)
On-state Resistance vs. Ambient Temperature
0.6
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
Forward voltage VF (V)
Input Current vs. Input Voltage
0.4
1
2
4
10
0
1
2
3
4
5
2
3
10
Normalized dark current
Normalized Off-state current vs.
Ambient Temperature
100
0 25 50 75 100
Ambient temperature TA ( °C )
On-state resistance r (on) (Ω)
20
4
2
0
10
100 1000 10k 100k
Region of Linear Resistance
Maximum RMS signal voltage V 46 (mV)
40
100
1.0
20
40
100
Forward current I F (mA)
Ambient temperature TA ( °C )
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Forward Current vs. Ambient Temperature
Forward current I F (mA)
70
80
maximum
RMS voltage
maximum
RMS current
Extrapolated
100
40
20
10
4
2
0
Maximum RMS signal current I 46 (
µ
A)
Normalized to
V46 = 15V
IF = 0
TA = 25 °C
1000
10000
TA = 75°C -25°C
25°C
I46 = 10µA RMS
r (on) = 200Ω
Normalized to
IF = 16mA
I46 = 25µA
TA = 25 °C
observed
range
median
device
0.2
0.1
0.4
0.8
