Darlington Transistors Features: * Designed for general-purpose amplifier and low speed switching applications * Collector-emitter sustaining voltage - VCEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126 100 V (minimum) - TIP122, TIP127 * Collector-emitter saturation voltage - VCE (sat) = 2 V (maximum) at IC = 3 A * Monolithic construction with built-in base-emitter shunt resistors Dimensions Minimum Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) NPN TIP120 TIP121 TIP122 Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.2 2.97 L 0.33 0.55 M 2.48 2.98 O 3.7 3.9 PNP TIP 125 TIP 126 TIP 127 5A Darlington Complementary Silicon Power Transistors 60 to 400 V 65 W TO-220 Dimensions : Millimetres Maximum Ratings Parameter Symbol TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Unit Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO 5 IC ICM 5 8 A Base Current IB 120 mA Total Power Dissipation at TC = 25C Derate above 25C PD 65 0.52 W W / C TJ, TSTG -65 to +150 C Collector Current - Continuous - Peak Operating and Storage Junction Temperature Range 60 80 100 V www.element14.com www.farnell.com www.newark.com Page <1> 16/06/12 V1.1 Darlington Transistors Thermal Characteristics Characteristic Thermal Resistance Junction to Case Symbol Maximum Unit Rjc 1.92 C / W PD, Power Dissipation (W) Power Derating TC, Temperature (C) Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Minimum VCEO (SUS) 60 80 100 - Maximum Unit - V Off Characteristics Collector-Emitter Breakdown Voltage (1) (IC = 30 mA, IB = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 Collector Cut off Current (VCE = 30 V, IB = 0) (VCE = 40 V, IB = 0) (VCE = 50 V, IB = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 ICEO Collector Cut off Current (VCE = 60 V, IB = 0) (VCE = 80 V, IB = 0) (VCE = 100 V, IB = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 ICBO - IEBO - Collector Cut off Current (VEB = 5 V, IC = 0) 0.5 0.5 0.5 0.2 0.2 0.2 mA 2 On Characteristics (1) DC Current Gain (IC = 0.5 A, VCE = 3 V) (IC = 3 A, VCE = 3 V) hFE Collector-Emitter Saturation Voltage (IC = 3 A, IB = 12 mA) (IC = 5 A, IB = 20 mA) VCE Base-Emitter on Voltage (IC = 3 A, VCE = 3 V) VBE (on) (sat) 1,000 1,000 - - - - 2 4 V 2.5 www.element14.com www.farnell.com www.newark.com Page <2> 16/06/12 V1.1 Darlington Transistors Dynamic Characteristics Small-Signal Current Gain (IC = 3 A, VCE = 4 V, f = 1 MHz) hfe 4 - - Output Capacitance (VCB = 10 V, IE = 0, f = 0.1 MHz) TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Cob - 300 250 pF (1) Pulse Test : Pulse width = 300 s, duty cycle 2% Internal Schematic Diagram NPN TIP120 TIP121 TIP122 PNP TIP125 TIP126 TIP127 Figure - 3 Switching Time T, Time (s) T, Time (s) Figure - 2 Switching Time IC, Collector Current (A) IC, Collector Current (A) Figure - 5 Capacitances C, Capacitances (pF) hFE, Small Signal Current Gain Figure - 4 Small Signal Current Gain f, Frequency (KHz) VR, Reverse Voltage (V) www.element14.com www.farnell.com www.newark.com Page <3> 16/06/12 V1.1 Darlington Transistors Figure - 6 Active Region Safe Operating Area IC, Collector Current (A) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC - VCE limits of the transistor that must not be subjected to greater dissipation than the curves indicate The data of Figure - 6 is based on TJ (PK) = 150C; TC is variable depending on power level Second breakdown pulse limits are valid for duty cycles to 10% provided TJ (PK) 150C, At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown VCE, Collector Emitter Voltage (V) hFE, DC Current Gain hFE, DC Current Gain Figure - 7 DC Current Gain IC, Collector Current (A) IC, Collector Current (A) VCE, Collector Emitter Voltage (V) VCE, Collector Emitter Voltage (V) Figure - 8 Collector Saturation Region IB, Base Current (mA) IB, Base Current (mA) www.element14.com www.farnell.com www.newark.com Page <4> 16/06/12 V1.1 Darlington Transistors V, Voltage (V) V, Voltage (V) Figure - 9 "ON" Voltage IC, Collector Current (A) IC, Collector Current (A) Specification Table IC A VCEO (Maximum) V hFE Minimum at IC = 3A Ptot at 25C W 60 5 80 1,000 65 100 Part Number Package TO-220 NPN PNP TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <5> 16/06/12 V1.1