© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 11 1Publication Order Number:
2N5883/D
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
2N5884 and 2N5886 are Preferred Devices
Complementary Silicon
High−Power Transistors
Complementary silicon high−power transistors are designed for
general−purpose power amplifier and switching applications.
Features
•Low Collector−Emitter Saturation Voltage −
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
•Low Leakage Current
ICEX = 1.0 mAdc (max) at Rated Voltage
•Excellent DC Current Gain −
hFE = 20 (min) at IC = 10 Adc
•High Current Gain Bandwidth Product −
ft = 4.0 MHz (min) at IC = 1.0 Adc
•Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎÎÎ
Value
ÎÎ
ÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
2N5883, 2N5885
2N5884, 2N5886
ÎÎÎ
Î
Î
Î
ÎÎÎ
VCEO
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
60
80
ÎÎ
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Base Voltage 2N5883, 2N5885
2N5884, 2N5886
ÎÎÎ
Î
Î
Î
ÎÎÎ
VCB
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
60
80
ÎÎ
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Voltage
ÎÎÎ
ÎÎÎ
VEB
ÎÎÎÎÎ
ÎÎÎÎÎ
5.0
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current −
Continuous
Peak
ÎÎÎ
Î
Î
Î
ÎÎÎ
IC
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
25
50
ÎÎ
ÎÎ
ÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎ
ÎÎÎ
IB
ÎÎÎÎÎ
ÎÎÎÎÎ
7.5
ÎÎ
ÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25°C
Derate above 25°C
ÎÎÎ
Î
Î
Î
ÎÎÎ
PD
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
200
1.15
ÎÎ
ÎÎ
ÎÎ
W
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎ
ÎÎÎ
TJ, Tstg
ÎÎÎÎÎ
ÎÎÎÎÎ
–65 to +200
ÎÎ
ÎÎ
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎÎÎ
Max
ÎÎ
ÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Case
ÎÎÎ
ÎÎÎ
qJC
ÎÎÎÎÎ
ÎÎÎÎÎ
0.875
ÎÎ
ÎÎ
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data. Units and conditions differ on some
parameters and re−registration reflecting these changes has been requested.
All above values most or exceed present JEDEC registered data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
25 AMPERE COMPLEMENTARY
SILICON POWER TRANSISTOR
S
60 − 80 VOLTS, 200 WATTS
MARKING DIAGRAM
TO−204AA (TO−3)
CASE 1−07
STYLE 1
2N588x = Device Code
x = 3, 4, 5, or 6
G = Pb−Free Package
A = Assembly Location
YY = Year
WW = Work Week
MEX = Country of Origin
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
2N588xG
AYYWW
MEX
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (Note 2) (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎ
ÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3) 2N5883, 2N5885
(IC = 200 mAdc, IB = 0) 2N5884, 2N5886
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
60
80
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) 2N5883, 2N5885
(VCE = 40 Vdc, IB = 0) 2N5984, 2N5886
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ICEO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
2.0
2.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N5883, 2N5885
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N5884, 2N5886
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) 2N5883, 2N5885
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C) 2N5884, 2N5886
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
ICEX
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
−
−
−
−
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
1.0
1.0
10
10
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) 2N5883, 2N5885
(VCB = 80 Vdc, IE = 0) 2N5884, 2N5886
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
ICBO
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
−
−
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
1.0
1.0
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
IEBO
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (Note 3)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
(IC = 25 Adc, VCE = 4.0 Vdc)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
hFE
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
35
20
4.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
100
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage (Note 3)
(IC = 15 Adc, IB = 1.5 Adc)
(IC = 25 Adc, IB = 6.25 Adc)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
VCE(sat)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
−
−
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
1.0
4.0
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage (Note 3) (IC = 25 Adc, IB = 6.25 Adc)
ÎÎÎÎ
ÎÎÎÎ
VBE(sat)
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
2.5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (Note 3) (IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
VBE(on)
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
1.5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain − Bandwidth Product (Note 4) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
ÎÎÎÎ
ÎÎÎÎ
fT
ÎÎÎÎ
ÎÎÎÎ
4.0
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance 2N5883, 2N5884
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2N5885, 2N5886
ÎÎÎÎ
ÎÎÎÎ
Cob
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎ
ÎÎÎ
1000
500
ÎÎÎ
ÎÎÎ
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 kHz)
ÎÎÎÎ
ÎÎÎÎ
hfe
ÎÎÎÎ
ÎÎÎÎ
20
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Rise Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
ÎÎÎÎ
ÎÎÎÎ
tr
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
0.7
ÎÎÎ
ÎÎÎ
ms
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Storage Time
ÎÎÎÎ
ÎÎÎÎ
ts
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
ms
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Fall Time
ÎÎÎÎ
ÎÎÎÎ
tf
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
0.8
ÎÎÎ
ÎÎÎ
ms
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT = |hfe| • ftest.
200
00 25 50 75 100 125 150 200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
175
100
75
50
125
150
25
175
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
http://onsemi.com
3
Figure 2. Switching Time Equivalent Test Circuits
2.0
0.3
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (AMPERES)
t, TIME (s)μ
1.0
0.5
0.2
0.07
0.05
0.02 0.5 0.7 1.0 2.0 3.0 5.0 7.0 30
TJ = 25°C
IC/IB = 10
VCC = 30 V
VBE(off) = 2 V
0.03
0.3
20
0.1
10
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
tr
td
0.7
+2.0 V
0
tr ≤
20ns
−11V
10 to 100 ms
DUTY CYCLE ≈ 2.0%
RB
RL
VCC −30 V
TO SCOPE
tr ≤ 20 ns
VCC −30 V
TO SCOPE
tr ≤ 20 ns
RL
RB
+9.0V
0
−11V
10 to 100 ms
DUTY CYCLE ≈ 2.0%
tr ≤ 20ns
VBB +7.0 V
3.0
10
3.0
10
TURN−ON TIME
TURN−OFF TIME
FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.5
0.2
0.1
0.05
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2000500
qJC(t) = r(t) qJC
qJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
SINGLE PULSE
0.1
1000
0.01
100
1.0
Figure 5. Active−Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
50
20
10
5.0
0.1 2.0 3.0 7.0 10 20 30 50 10
0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
(SINGLE PULSE)
70
2.0
IC, COLLECTOR CURRENT (AMPERES)
TJ = 200°C
CURVES APPLY BELOW RATED VCEO
dc
500 ms
1ms
1.0
0.5
0.2
5.0
2N5883, 2N5885
2N5884, 2N5886
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I C − V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200°C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
http://onsemi.com
4
10
0.3
Figure 6. Turn−Off Time
IC, COLLECTOR CURRENT (AMPERES)
5.0
3.0
0.7
0.5
0.1 0.5 0.7 1.0 2.0 5.0 10 30
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
0.2
t, TIME (s)μ
ts
3.0
3000
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
300 2.0 5.0 10 20 100500.2 0.5 1.0
C, CAPACITANCE (pF)
2000
700
500
TJ = 25°C
Cib
Cob
1.0
7.0
20
1000
7.0
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
tf
Cib
Cob
ts
tf
2.0
0.3
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1000
0.3
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMPERES)
10 0.5 0.7 1.0 3.0 5.0 7.0 10 30
70
30
20
100
50
hFE, DC CURRENT GAIN
200
300
VCE = 4.0 V
2.0 20
PNP DEVICES
2N5883 and 2N5884
IC, COLLECTOR CURRENT (AMPERES)
hFE, DC CURRENT GAIN
NPN DEVICES
2N5885 and 2N5886
2.0
0.01
IB, BASE CURRENT (AMPERES)
00.02 0.1 0.2 1.0 10
0.8
0.4
IC = 2.0 A
TJ = 25°C
5.0 A
1.2
1.6
0.05 0.5
10 A
IB, COLLECTOR CURRENT (AMPERES)
TJ = 25°C
700
500 TJ = 150°C
25°C
−55 °C
0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 302.0 20
VCE = 4.0 V
TJ = 150°C
25°C
−55 °C
2.0 5.0
20 A IC = 2.0 A 5.0 A 10 A 20 A
1000
10
70
30
20
100
50
200
300
700
500
2.0
0.01
00.02 0.1 0.2 1.0 10
0.8
0.4
1.2
1.6
0.05 0.5 2.0 5.0
Figure 9. DC Current Gain
Figure 10. Collector Saturation Region Figure 11. Collector Saturation Region
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
http://onsemi.com
5
2.0
0.3
IC, COLLECTOR CURRENT (AMPERES)
0.5 0.7 1.0 2.0 3.0 7.0 10 30
1.6
1.2
0.8
0.4
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V
,
VOLTAGE
(VOLTS)
20
VBE @ VCE = 4 V
5.0
IC, COLLECTOR CURRENT (AMPERES)
TJ = 25°C
V, VOLTAGE (VOLTS)
2.0
0.3 0.5 0.7 1.0 2.0 3.0 7.0 10 30
1.6
1.2
0.8
0.4
0205.0
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 4 V
Figure 12. “On” Voltages Figure 13. “On” Voltages
ORDERING INFORMATION
Device Package Shipping
2N5883 TO−204
100 Units / Tray
2N5883G TO−204
(Pb−Free)
2N5884 TO−204
2N5884G TO−204
(Pb−Free)
2N5885 TO−204
2N5885G TO−204
(Pb−Free)
2N5886 TO−204
2N5886G TO−204
(Pb−Free)
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
http://onsemi.com
6
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B−−− 1.050 −−− 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N−−− 0.830 −−− 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
−T− SEATING
PLANE
2 PLD
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
−Q−
−Y−
2
1
UL
GB
V
H
TO−204 (TO−3)
CASE 1−07
ISSUE Z
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its of ficers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
2N5883/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
