NTE159
Silicon PNP Transistor
Audio Amplifier, Switch
(Compl to NTE123AP)
Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-Base Voltage, VCBO 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter-Base Voltage, VEBO 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, IC800mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TA = 25°C), PD625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ-55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg -55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Case, RθJC 83.3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Ambient, RθJA 200°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched com‐
plementary pairs have their gain specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 2 80 - - V
Collector-Base Breakdown Voltage V(BR)CBO IC = 10μA, IE = 0 80 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10μA, IC = 0 5 - - V
Collector Cutoff Current ICBO VCB = 50V, IE = 0 - - 50 nA
VCB = 50V, IE = 0, TA = +75°C - - 5 μA
Emitter Cutoff Current IEBO - - 100 nA
ON Characteristics (Note 2)
DC Current Gain hFE VCE = 10V, IC = 100μA 25 - -
VCE = 10V, IC = 1mA 40 - -
VCE = 10V, IC = 10mA 50 - 250
VCE = 10V, IC = 100mA 40 - -
VCE = 10V, IC = 500mA 30 - -
Collector-Emitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA - - 0.15 V
IC = 500mA, IB = 50mA - - 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC = 150mA, IB = 15mA - - 0.9 V
IC = 500mA, IB = 50mA - - 1.1 V
Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic Characteristics
Output Capacitance Cob VCB = 20V, IE = 0, f = 1MHz - - 30 pF
Input Capacitance CibVBE = 500mV, f = 1MHz - - 110 pF
Small-Signal Current Gain hfe IC = 500mA, VCE = 10V, f = 100MHz 1 - 5
Noise Figure NF IC = 100mA, VCE = 10V, RS = 1kΩ,
f = 1kHz, BW = 1Hz
- - 3 dB
Switching Characteristics
Turn-On Time ton VCC = 30V, IC = 500mA,
IB1 = IB2 = 50mA
- - 100 ns
Turn-Off Time toff - - 400 ns
.021 (.445) Dia Max
E B C
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
