SEMICONDUCTORS INC OE D B sisueso Ooo0es? 5 i T- 5 Sy OF DO35 PACKAGE Silicon Switching Diodes TH DO-35 Package i- ows ABSOLUTE MAXIMUM RATINGS @250C Storage Temperature .,.......:cscccsecceeeececrseeeeeeseeeseseees -65C to +175C 8 Operating Temperature ......-.--. ww. -65C to +150C Ty Power Dissipation ..........ccccseceesscocaeeeeececttensetenetsenenes 500 mW we CHARACTERISTICS @ 25C ( UNLESS OTHERWISE NOTED ) L | po? BV 1g (ma) [MAXIMUM REVERSE CURRENT |MAX.CaP.|,_ | AVE. RECTIFIED TYPE equivacent| MIN "HA! lary ovi Tega 2sec | 150C [evaiv! tot |insee) ror AO AL RRENT 1n4148 | 1N914) | 75x) | 5 10 025 | 65} 20 4 alt 75 1N4149 1N916 75(X} 5 10 025 .05 20 2 4(1)} 75 1N4150 1N3600 50 100 20011) 0.1 0.1 50 2.5 10(2 150 1N4151 1N3604 75 5 50 .05 .05 50 2 2(1) 150 1N4152 1N3605 40 5 50 .05 .05 30 2 2(1 150 1N4153 1N3606 75 5 50 .0S .05 50 2 2(1 150 1N4154 1N4009 35 5 30 0.1 0.1 25 4 21) 25 1N4305 1N4063 75 5 50 0.1 0.1 50 2 2(1) 150 1N4444 - 70 5 100 .05 05 50 2 _ 200 1N4446 IN914A 75(X) 5 20 .025 05 20 4 4(1) 150 1N4447 IN916A 75(X) 5 20 .025 .O5 20 2 4(1) 150 1N4448 1N914B 75(X) 5 100 .025 .05 20 4 4(1) 150 1N4449 1N916B 75(X) 5 30 .025 .05 20 2 4(1) 150 1N4450 - 40(X) 5 200 .05 .05 30 4 41 200 1N4451 ~ 40 5 300 .05 .05 30 6 - 200 1N4452 - 40 5 | 600 05 05 | 30 30 |so(1) 200 1N4453 - 30 5 100 05 05 20 30 _ 100 1N4454 IN3064 75 5 10 0.1 01 50 2 2(1) 75 TrR TEST CONDITIONS (1) p= 10mA Recover to mA (2) Ip =!R = 10 to 200mA VR=6V RL = 1000HMS ire = 0.1 General Puroose Varactor Tuning Diodes ELECTRICAL CHARACTERISTICS @ Ta=25C DEVICE | CAPACITANCE | TYPICAL CAPACITANCE} QUALITY FACTOR | REVERSE |MAXIMUM TYPE @ -4Vdc RANGE Q @ -4Vdc f=50Mc;j VOLTAGE | WORKING 0.1Vdc to MWV MIN, @100 uA |VOLTAGE X Also Tested At 100V @ 100uA Capacitance Tolerance: DO-7 PACKAGE 107 DIA MAX Standard Device.......20% ns er SUTFIX Alec see eee e eee tL0% =| PS Suffix Be. cs ccc cece eae t5S a SUFFIX Corse eee ee cenees 42% | anu <p 8 Suffix Di... cc. ce ee ee HLS