Me 4496205 0013079 S77 MBHITY 2SK551 HITACHI/(C OPTOELECTRONICS) b&1E D SILICON N-CHANNEL MOS FET A HIGH SPEED POWER SWITCHING m@ FEATURES @ Low On-Resistance @ High Speed Switching @ Low Drive Current 3 @ No Secondary Breakdown y pate @ Suitable for Switching Regulator, DC-DC Converter 3 ri lange) . be urce and Motor Driver (JEDEC TO-220AB) (Dimensions in mm) B ABSOLUTE MAXIMUM RATINGS (7.=25 C) POWER VS. TEMPERATURE DERATING Item Symbol Rating Unit 6 Drain-Source Voltage Voss 120 Vv Gate-Source Voltage Vass +20 v Drain Current Io 10 A = Drain Peak Current Toxpuises* 40 A 2 -Drain Diode 5 Reverse Drain Current ton 10 A : Channel Dissipation Pu** 50 Ww 1 2 Channel Temperature Ton 150 C 5 Storage Temperature Tag 55 ~ +150 c *PW<l0us, duty cycles 1% **Value at T=25 C 0 50 100 150 Case Temperaure Tc (TC) @ ELECTRICAL CHARACTERISTICS (7.=25 C) Item Symbol Test Condition min. | typ. | max. | Unit Drain-Source Breakdown Voltage Viarspss Ip=10mA, Ves=0 120 ~ - Vv Gate-Source Breakdown Voltage Vianess Ig=+100pA, Vos=0 +20 _ - v Gate-Source Leak Current Toss Ves=t16V, Vos=0 _ | +10] w#A Zero Gate Voltage Drain Current Toss Vos=100V, Vis=0 _- ! 250] pA Gate-Source Cutoff Voltage Vasvoff) Tp=1mA, Vos=10V 2.0 - 4.0 v Static Drain-Source On State Rostom Ip=BA, Ves=10V" | owl 02 0 Resistance Forward Transfer Admittance lyr Ip=5A, Vos=10V* 3.0) 5.0 - s Input Capacitance Cus { 730 j| pF Output Capacitance Cass Vos=10V, Ves=0, f=1MHz j| 330 | pF Reverse Transfer Capacitance Cus - 40 | pF Turn-on Delay Time taom - 15 j] ns Rise Time t, - 40 j| ns Turn-off Delay Time tacn To=BA, Vis=10V R60 70 | ns Fall Time t - 45 | ns Body-Drain Diode Forward Voltage Vor T=10A, Vos=0 - 12 - v Body-Drain Diode ty 1=10A, Ves=0 | 200 _ ns Reverse Recovery Time di-/dt=50A/us *Pulse Test 301 BLE D MM 4496205 0013080 299 MHITY 28K551 AREA OF SAFE OPERATION TYPICAL OUTPUT CHARACTERISTICS 100 20 15V gv Ww 10V 16 Pulse Test = z <= 2 iW 5 3 8 < E 3 oo = 10 & 4 5 03 0.) 0 = Drain to Source Voltage Vos (V) Drain to Source Voltage Vos (V) HITACHI/( OPTOELECTRONICS ) DRAIN TO SOURCE SATURATION VOLTAGE TYPICAL TRANSFER CHARACTERISTICS VS. GATE TO SOURCE VOLTAGE 10 5 Vas=10V < 8 Tes 6 4 > z 5 s 6 3 3 <4 Bo & g 8 2 gs ! & 9 4 10 0 4 8 16 20 Gate to Source Voltage Ves (V) Gate to Source Voltage Ves (V) STATIC DRAIN TO SOURCE ON STATE STATIC DRAIN TO SOURCE ON STATE RESISTANCE VS. DAIN CURRENT RESISTANCE VS. CASE TEMPERATURE 05 Pulse cs=10V Pulse Test 04 03 05 02 02 01 01 0.05 Static Drain-Source On State Resistance Rosies (2) Static Drain-Source On State Resistance Rosier) (Q) 10 20 50 Drain Current Io (A) Case Temperature Tc (C) 302 Forward Transfer Admittance |y,| (S) Capacitance C (pF) Switching Time (ns) BLE D MM 4496205 0013081 eS MHHITY HITACHI/ (OPTOELECTRONICS ) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT Vos = Forward Transfer Admittance |yy.| (S) Drain Current Io (A) CAPACITANCE VS. DRAIN TO SOURCE VOLTAGE Ves=0 {=IMHz Drain to Source Voltage Vos (V) Drain to Source Voltage Vos (V) SWITCHING TIME VS. DRAIN CURRENT Ves= PW=2us, duty<1% Reverse Drain Current Inx (A} Drain Current Io (A) FORWARD TRANSFER ADMITTANCE VS. FREQUENCY 2SK551 Frequency f (Hz) DYNAMIC INPUT CHARACTERISTICS 100 Gate Charge Q, (ne) REVERSE DRAIN CURRENT VS. SOURCE TO DRAIN VOLTAGE Source to Drain Voltage Vso (V) Gate to Source Voltage Vcs (V) 303 bLE D WM 4496205 0013082 Ob] MBHIT4 2SK551 HITACHI/ (OPTOELECTRONICS) NORMALIZED TRANSIENT THERMAL IMPEDANCE VS. PULSE WIDTH Sch-e( t) = Yel t)- Beh-e Och-c=2 5T/W, Te =25T Normalized Transient Thermal Impedance 7, (t) Pulse Width PW (s) SWITCHING TIME TEST CIRCUIT WAVEFORM Ve 10% \ Vent \. 10% 90% 90% batons te teusp ty Vin Monitor 304