DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 14
2004 Nov 22
DISCRETE SEMICONDUCTORS
PXT4403
PNP switching transistor
db
ook, halfpage
M3D109
2004 Nov 22 2
NXP Semiconductors Product data sheet
PNP switching transistor PXT4403
FEATURES
High current (max. 600 mA)
Low voltage (max. 40 V).
APPLICATIONS
Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a SOT89 plastic package.
NPN complement: PXT4401.
MARKING
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
PXT4403 *2T
PIN DESCRIPTION
1emitter
2collector
3base
321 sym07
9
1
2
3
Fig.1 Simplified outline (SOT89 ) and symbo l .
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
PXT4403 SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads SOT89
2004 Nov 22 3
NXP Semiconductors Pr oduct data shee t
PNP switching transistor PXT4403
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Notes
1. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and standard footprint.
2. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and mounting pad for collector 1 cm2.
3. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and mounting pad for collector 6 cm2.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter 40 V
VCEO collector-emitter voltage open base 40 V
VEBO emitter-base voltage open collector 5 V
ICcollector current (DC) 600 mA
ICM peak collector current 800 mA
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C
note 1 0.5 W
note 2 0.8 W
note 3 1.1 W
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb ambient temperature 65 +150 °C
Tamb (°C)
75 17512525 7525
006aaa238
800
400
1200
1600
Ptot
(mW)
0
(1)
(2)
(3)
Fig.2 Power derating curves.
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4 PCB; standard footprint .
2004 Nov 22 4
NXP Semiconductors Pr oduct data shee t
PNP switching transistor PXT4403
THERMAL CHARACTE RISTICS
Notes
1. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and standard footprint.
2. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and mounting pad for collector 1 cm2.
3. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and mounting pad for collector 6 cm2.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to
ambient in free air
note 1 250 K/W
note 2 156 K/W
note 3 113 K/W
Rth(j-s) thermal resistance from juncti on to
soldering point 30 K/W
006aaa235
10510102
104102
101tp (s)
103103
1
102
10
103
Zth
(K/W)
1
(6)
(7)
(8)
(9)
(10)
(1)
(5)
(4)
(3) (2)
Fig.3 Transient thermal impeda nc e as a function of pulse time; typical values.
(1) δ = 1.
(2) δ = 0.75. (3) δ = 0.5.
(4) δ = 0.33. (5) δ = 0.2.
(6) δ = 0.1. (7) δ = 0.05.
(8) δ = 0.02. (9) δ = 0.01.
(10) δ = 0.
Mounted on FR4 printed -circuit bo ard; standard footprint.
2004 Nov 22 5
NXP Semiconductors Pr oduct data shee t
PNP switching transistor PXT4403
006aaa236
10510102
104102
101tp (s)
103103
1
102
10
103
Zth
(K/W)
1
(6)
(7)
(8)
(5)
(1)
(10)
(9)
(4)
(3)
(2)
Fig.4 Transient thermal impeda nc e as a function of pulse time; typical values.
(1) δ = 1.
(2) δ = 0.75. (3) δ = 0.5.
(4) δ = 0.33. (5) δ = 0.2.
(6) δ = 0.1. (7) δ = 0.05.
(8) δ = 0.02. (9) δ = 0.01.
(10) δ = 0.
Mounted on F R4 printed-circuit board; mounting pad for collector 1 cm 2.
006aaa237
10510102
104102
101tp (s)
103103
1
102
10
103
Zth
(K/W)
1
(6)
(7)
(8)
(10)
(1)
(5)
(4)
(3)
(9)
(2)
Fig.5 Transient thermal impeda nc e as a function of pulse time; typical values.
(1) δ = 1.
(2) δ = 0.75. (3) δ = 0.5.
(4) δ = 0.33. (5) δ = 0.2.
(6) δ = 0.1. (7) δ = 0.05.
(8) δ = 0.02. (9) δ = 0.01.
(10) δ = 0.
Mounted on F R4 printed-circuit board; mounting pad for collector 6 cm 2.
2004 Nov 22 6
NXP Semiconductors Pr oduct data shee t
PNP switching transistor PXT4403
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector-base cut-off current IE = 0 A; VCB = 40 V 50 nA
IEBO emitter-base cu t-off current IC = 0 A; VEB = 5 V 50 nA
hFE DC current gain IC = 0.1 mA; VCE = 1 V 30
IC = 1 mA; VCE = 1 V 60
IC = 10 mA; VCE = 1 V 100
IC = 150 mA; VCE = 2 V 100 300
IC = 500 mA; VCE = 2 V 20
VCEsat collector-emitter saturation
voltage IC = 150 mA; IB = 15 mA 400 mV
IC = 500 mA; IB = 50 mA 750 mV
VBEsat base-emitt er saturation voltage IC = 150 mA; IB = 15 mA 950 mV
IC = 500 mA; IB = 50 mA 1.3 V
Cccollector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz 8.5 pF
Ceemitter cap a citance IC = ic = 0 A; VEB = 500 mV; f = 1 MHz 35 pF
fTtransition freque ncy IC = 20 mA; VCE = 10 V; f = 100 MHz 200 MHz
Switching times (between 10% and 90% levels); (see Fig.7)
ton turn-on time ICon = 150 mA; IBon = 15 mA;
IBoff = 15 mA 40 ns
tddelay time 15 ns
trrise time 30 ns
toff turn-off time 350 ns
tsstorage time 300 ns
tffall time 50 ns
2004 Nov 22 7
NXP Semiconductors Pr oduct data shee t
PNP switching transistor PXT4403
Fig.6 DC current gain; typical values.
nd
book, full pagewidth
0
300
100
200
MGD812
101110 102103
hFE
IC mA
VCE = 1 V
Fig.7 Test circuit for switching times.
handbook, full pagewidth
RC
R2
R1
DUT
MGD624
Vo
RB(probe)
450
(probe)
450
oscilloscope oscilloscope
V
BB
Vi
V
CC
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf 3 ns.
R1 = 68 ; R2 = 325 ; RB = 325 ; RC = 160 .
VBB = 3.5 V; VCC = 29.5 V.
Oscilloscope input impedance Zi = 50 .
2004 Nov 22 8
NXP Semiconductors Pr oduct data shee t
PNP switching transistor PXT4403
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 04-08-03
06-03-16
wM
e1
e
EHE
B
0 2 4 mm
scale
bp3
bp2
bp1
c
D
Lp
A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
9
123
UNIT A
mm 1.6
1.4 0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
HELp
4.25
3.75
e
3.0
w
0.13
e1
1.5 1.2
0.8
bp2
bp1
0.53
0.40
bp3
1.8
1.4
2004 Nov 22 9
NXP Semiconductors Pr oduct data shee t
PNP switching transistor PXT4403
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed
and may differ in case of multiple devices. The latest product status information is available on the Inter net at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
General Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
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reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, au thorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
the customer’s own risk .
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any incons istency or conflict betw een information
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Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/04/pp10 Date of release: 2004 Nov 22 Document orde r number: 9397 750 13899