VS-ST333C..C Series
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Inverter Grade Thyristors
(Hockey PUK Version), 720 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case E-PUK (TO-200AB)
• High surge current capability
• Low thermal impedance
• High speed performance
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
Package E-PUK (TO-200AB)
Circuit configuration Single SCR
IT(AV) 720 A
VDRM/VRRM 400 V, 800 V
VTM 1.96 V
ITSM at 50 Hz 11 000 A
ITSM at 60 Hz 11 500 A
IGT 200 mA
TC/Ths 55 °C
E-PUK (TO-200AB)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
720 A
Ths 55 °C
IT(RMS)
1435 A
Ths 25 °C
ITSM
50 Hz 11 000 A
60 Hz 11 500
I2t50 Hz 605 kA2s
60 Hz 553
VDRM/VRRM 400 to 800 V
tqRange 10 to 30 μs
TJ-40 to +125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
VS-ST333C..C 04 400 500 50
08 800 900
VS-ST333C..C Series
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CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 1630 1420 2520 2260 7610 6820
A
400 Hz 1630 1390 2670 2330 4080 3600
1000 Hz 1350 1090 2440 2120 2420 2100
2500 Hz 720 550 1450 1220 1230 1027
Recovery voltage Vr50 50 50 V
Voltage before turn-on VdVDRM VDRM VDRM
Rise of on-state current dI/dt 50 - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 /µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV)
180° conduction, half sine wave
Double side (single side) cooled
720 (350) A
55 (75) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 1435
A
Maximum peak, one half cycle,
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
11 000
t = 8.3 ms 11 500
t = 10 ms 100 % VRRM
reapplied
9250
t = 8.3 ms 9700
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
605
kA2s
t = 8.3 ms 553
t = 10 ms 100 % VRRM
reapplied
428
t = 8.3 ms 391
Maximum I2t for fusing I2tt = 0.1 to 10 ms, no voltage reapplied 6050 kA2s
Maximum peak on-state voltage VTM ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.96
VLow level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.91
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.93
Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.58 m
High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.58
Maximum holding current IHTJ = 25 °C, IT > 30 A 600 mA
Typical latching current ILTJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
MIN. MAX.
Maximum non-repetitive rate of rise
of turned on current dI/dt TJ = TJ maximum, VDRM = Rated VDRM; ITM = 2 x dI/dt 1000 A/µs
Typical delay time tdTJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source 1.1
µs
Maximum turn-off time tq
TJ = TJ maximum,
ITM = 550 A, commutating dI/dt = 40 A/μs
VR = 50 V, tp = 500 μs, dV/dt: See table in device code
10 30
180° el
ITM
180° el
ITM
100 µs
ITM
VS-ST333C..C Series
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Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request 500 V/µs
Maximum peak reverse and off-state leakage current IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, f = 50 Hz, d% = 50 60 W
Maximum average gate power PG(AV) 10
Maximum peak positive gate current IGM
TJ = TJ maximum, tp 5 ms
10 A
Maximum peak positive gate voltage +VGM 20 V
Maximum peak negative gate voltage -VGM 5
Maximum DC gate current required to trigger IGT TJ = 25 °C, VA = 12 V, Ra = 6 200 mA
Maximum DC gate voltage required to trigger VGT 3V
Maximum DC gate current not to trigger IGD TJ = TJ maximum, rated VDRM applied 20 mA
Maximum DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range TJ-40 to +125 °C
Maximum storage temperature range TStg -40 to +150
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled 0.09
K/W
DC operation double side cooled 0.04
Maximum thermal resistance, case to heatsink RthC-hs
DC operation single side cooled 0.020
DC operation double side cooled 0.010
Mounting force, ± 10 % 9800
(1000)
N
(kg)
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet E-PUK (TO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.010 0.011 0.007 0.007
TJ = TJ maximum K/W
120° 0.012 0.012 0.012 0.013
90° 0.015 0.015 0.016 0.017
60° 0.022 0.022 0.023 0.023
30° 0.036 0.036 0.036 0.037
VS-ST333C..C Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
30°
60°
90° 120° 180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST333C..C Series
(Single Side Cooled)
R (D C ) = 0 .09 K/ W
th J- hs
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800 900
DC
30° 60°
90°
120° 180°
A ve ra ge O n -sta te C urre nt (A )
Cond uction P eriod
Maximum Allowable Heatsink Tem perature (°C)
ST333C ..C Series
(Single Side C oo led)
R (D C) = 0 .09 K/W
th J-hs
10
20
30
40
50
60
70
80
90
100
110
120
130
0 200 4 00 600 800 1000
30°
60°
90°
120° 180°
Average O n-state C urrent (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST333 C..C S er ies
(D ouble Side C oo le d)
R (D C ) = 0.04 K/W
thJ-h s
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400 1600
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST333C..C Series
( Double Side Cooled )
R (DC) = 0.04 K/W
th J-hs
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0 200 400 600 800 1000
180°
120°
90°
60°
30° RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average O n-state Curren t (A)
ST333 C ..C Serie s
T = 125°C
J
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
0 200 400 600 800 1000 1200 1400 1600
DC
180°
120°
90°
60°
30° RMS Limit
Conduction Period
M axim um Average On-state Pow er Loss (W )
Average O n-state Curren t (A)
ST333C..C Series
T = 125°C
J
VS-ST333C..C Series
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
001011
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At An y Rated L oad Con dition And W ith
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
In it i al T = 125 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST333C..C Series
4000
5000
6000
7000
8000
9000
10000
11000
12000
0.01 0.1 1
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be M aintained.
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST333C..C Series
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
T = 25°C
J
Instantaneous On-state Current (A)
Instan tan eous O n-state Voltage (V)
T = 125°C
J
ST3 33C..C Serie s
80
100
120
140
160
180
200
220
240
260
280
300
320
10 20 30 40 50 60 70 80 90 100
I = 500 A
300 A
200 A
100 A
50 A
Rate Of Fall Of On-state Current - di/dt (A/µs)
Maximum Reverse Recovery Charge - Qrr (µC)
TM
ST333C..C Series
T = 125 °C
J
20
40
60
80
100
120
140
160
180
10 20 30 40 50 60 70 80 90 100
M ax im um Reve rse Rec ove ry C urren t - Irr (A )
Rate Of Fall O f Forw a rd C urren t - d i/d t (A /µs)
I = 5 00 A
300 A
200 A
100 A
50 A
TM
ST333C ..C Series
T = 125 ° C
J
VS-ST333C..C Series
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Fig. 13 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Basewidth (µs)
Peak On-state Current (A)
1000
1500
3000
200
500
5000
ST333C..C Series
Sinusoidal pulse
T = 40°C
C
Snubb er circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
DDRM
tp
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Ba sew id th (µs)
1000
1500
3000
200
500
5000 ST333C..C Series
Sinusoidal pulse
T = 55°C
C
Snubb er circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
DDRM
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
2000
200
500
Pulse Basewidth (µs)
Peak On-state C urrent (A)
ST333C..C Series
Trap ezoidal p ulse
T = 40°C
di/dt = 50A/µs
3000
Snubber circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
DDRM
C
tp
5000
1E11E21E31E4
50 Hz
400 100
Pulse Basewidth (µs)
1000
1500
2000
200
500
2500
Snubber circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
DRM
s
s
D
ST333C..C Series
Tr a pezo id al p uls e
T = 55°C
di/dt = 100A/µs
C
3000
5000 tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
2000
3000
200
500
Pulse Basew idth (µs)
Pea k O n-sta te Curre nt (A )
ST333C..C Series
Trapezoidal pulse
T = 40°C
d i/dt = 100A/µs
Snubb er circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
DDRM
C
5000
tp
1E1 1E2 1 E3 1E4
50 Hz
400 10 0
Pulse Basew idth (µs)
1000
1500
2000
200
500
ST333C..C Series
Tr a pezo id a l p uls e
T = 55°C
di/dt = 100A/µs
C
2500
Snubber circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
DDR M
tp
3000
5000
VS-ST333C..C Series
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Fig. 16 - Maximum On-State Energy Power Loss Characteristics
Fig. 17 - Gate Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
20 joules per p ulse
2
1
0.5
0.3
0.2
10
5
Peak On-state Current (A)
3
ST33 3C ..C Series
Sinusoidal pulse
tp
1E4
1E1 1E2 1E3 1E4
Pulse Basew idth (µs)
20 joules per pulse
2
1
0.5
0.3
0.2
10
3
ST3 33 C Se ries
Rec ta ng ula r p u ls e
di/dt = 50A/µs
0.4
t p 5
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IG D
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1) (2)
Instanta ne ous G ate C urrent (A )
Instantan eous G ate Vo ltage (V )
Rectangular gate pulse
a ) R e c o m m en d e d lo a d lin e fo r
b ) Re c o m m e n d e d lo a d lin e f o r
<=30% rated di/dt : 10V, 10ohms
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W , tp = 20 m s
(2) PGM = 20W , tp = 10 m s
(3) PGM = 40W , tp = 5m s
(4) PGM = 60W, tp = 3.3ms
(3 )
Device: ST333C ..C Series Frequen cy Lim ited by PG(A V )
(4)
VS-ST333C..C Series
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ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95075
3 = fast-on terminal
(gate and aux. cathode soldered leads)
- Thyristor
-Essential part number
- 3 = fast turn off
- C = ceramic PUK
- Voltage code x 100 = VRRM (see Voltage Ratings table)
- C = PUK case E-PUK (TO-200AB)
- Reapplied dV/dt code (for tq test condition)
-t
q code
- 0 = eyelet terminal
(gate and aux. cathode unsoldered leads)
1 = fast-on terminal
(gate and aux. cathode unsoldered leads)
2 = eyelet terminal
(gate and aux. cathode soldered leads)
- Critical dV/dt:
None = 500 V/μs (standard value)
L = 1000 V/μs (special selection)
* Standard part number.
All other types available only on request.
tq (µs)
dV/dt - tq combinations available
dV/dt (V/µs)
20 50 100 200 400
10 CN DN EN -- --
12 CM DM EM FM* --
15 CL DL EL FL* HL
18 CP DP EP FP HP
20 CK DK EK FK HK
25 -- -- -- FJ HJ
30 -- -- -- -- HH
Device code
51 32 4 6 7 8 9 10 11
VS-ST33 3 C08C H K 1 -
1
2
3
4
5
10
6
7
8
9
11
-Vishay Semiconductors product
Outline Dimensions
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E-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
4.75 (0.19)
28 (1.10)
6.5 (0.26)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
25.3 (0.99)
DIA. MAX.
14.1/15.1
(0.56/0.59)
25° ± 5°
25.3 (0.99)
DIA. MAX.
40.5 (1.59) DIA. MAX.
42 (1.65) MAX.
Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
C
A
G
Note:
A = Anode
C = Cathode
G = Gate
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