VS-ST333C..C Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Hockey PUK Version), 720 A FEATURES * Metal case with ceramic insulator * All diffused design * Center amplifying gate * Guaranteed high dV/dt * Guaranteed high dI/dt * International standard case E-PUK (TO-200AB) E-PUK (TO-200AB) * High surge current capability * Low thermal impedance * High speed performance PRIMARY CHARACTERISTICS Package E-PUK (TO-200AB) Circuit configuration Single SCR * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 IT(AV) 720 A VDRM/VRRM 400 V, 800 V VTM 1.96 V ITSM at 50 Hz 11 000 A ITSM at 60 Hz 11 500 A * Induction heating IGT 200 mA * All types of force-commutated converters TC/Ths 55 C TYPICAL APPLICATIONS * Inverters * Choppers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 C 1435 A 25 C 11 000 60 Hz 11 500 50 Hz 605 60 Hz 553 Range TJ UNITS 720 50 Hz VDRM/VRRM tq VALUES A kA2s 400 to 800 V 10 to 30 s -40 to +125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST333C..C VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50 Revision: 13-Sep-17 Document Number: 93678 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST333C..C Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM ITM 180 el UNITS 100 s 180 el 50 Hz 1630 1420 2520 2260 7610 400 Hz 1630 1390 2670 2330 4080 3600 1000 Hz 1350 1090 2440 2120 2420 2100 2500 Hz 720 550 1450 1220 1230 Recovery voltage Vr Voltage before turn-on Vd 50 50 VDRM VDRM VDRM Equivalent values for RC circuit 50 40 55 10/0.47 40 A 1027 50 Rise of on-state current dI/dt Heatsink temperature 6820 V 55 40 10/0.47 A/s 55 C /F 10/0.47 ON-STATE CONDUCTION PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t A 55 (75) C t = 8.3 ms t = 10 ms t = 8.3 ms 1435 11 000 No voltage reapplied 100 % VRRM reapplied No voltage reapplied UNITS 720 (350) DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current VALUES 180 conduction, half sine wave Double side (single side) cooled 11 500 A 9250 9700 Sinusoidal half wave, initial TJ = TJ maximum 605 553 428 100 % VRRM reapplied kA2s 391 Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 6050 Maximum peak on-state voltage VTM ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.96 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.91 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.93 Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.58 High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.58 Maximum holding current IH TJ = 25 C, IT > 30 A 600 Typical latching current IL TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A 1000 kA2s V m mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned on current SYMBOL dI/dt TEST CONDITIONS VALUES MIN. MAX. TJ = TJ maximum, VDRM = Rated VDRM; ITM = 2 x dI/dt Typical delay time td TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source Maximum turn-off time tq TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/s VR = 50 V, tp = 500 s, dV/dt: See table in device code 1000 UNITS A/s 1.1 s 10 30 Revision: 13-Sep-17 Document Number: 93678 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST333C..C Series www.vishay.com Vishay Semiconductors BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 500 V/s Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM Maximum DC gate current required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD 60 TJ = TJ maximum, f = 50 Hz, d% = 50 10 10 TJ = TJ maximum, tp 5 ms 20 5 200 TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, rated VDRM applied W A V mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range TEST CONDITIONS TJ -40 to +125 TStg -40 to +150 Maximum thermal resistance, junction to heatsink RthJ-hs Maximum thermal resistance, case to heatsink RthC-hs DC operation single side cooled 0.09 DC operation double side cooled 0.04 DC operation single side cooled 0.020 DC operation double side cooled 0.010 Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet C K/W 9800 (1000) N (kg) 83 g E-PUK (TO-200AB) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION SINGLE SIDE DOUBLE SIDE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE 180 0.010 0.011 0.007 0.007 120 0.012 0.012 0.012 0.013 90 0.015 0.015 0.016 0.017 60 0.022 0.022 0.023 0.023 30 0.036 0.036 0.036 0.037 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 13-Sep-17 Document Number: 93678 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST333C..C Series www.vishay.com Vishay Semiconductors 130 ST333C..C Series (Single Side Cooled) Rth J- hs (DC) = 0.09 K/W 120 110 100 90 C o nd uc tio n A ng le 80 70 60 50 30 60 40 90 30 120 180 20 0 100 200 300 400 500 600 Maxim um Allowable Heatsin k Tem perature (C) Maximum Allowable Heatsink Temperature (C) 130 ST333C..C Series ( Double Side Cooled ) Rth J-hs (DC) = 0.04 K/W 120 110 100 90 C o ndu ctio n Pe riod 80 70 30 60 60 50 90 40 120 180 30 DC 20 0 Average On -state Current (A) Average O n-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 2 2 00 ST 3 3 3 C ..C S e rie s (Sin g le S id e C o o le d ) R th J-hs ( D C ) = 0 .0 9 K / W 1 20 1 10 1 00 90 80 Co nd uc tio n P e rio d 70 60 50 30 40 6 0 90 12 0 30 20 0 1 80 DC 10 0 2 00 30 0 40 0 5 00 6 0 0 70 0 80 0 9 00 M a x im um A v e r a g e O n - st a t e Po w e r L o ss (W ) M a xim u m A llo w ab le H e a t sin k T e m p e ra t u re (C ) 1 30 2 0 00 1 8 0 1 2 0 90 60 30 1 8 00 1 6 00 1 4 00 1 0 00 8 00 C o ndu ctio n A ng le 6 00 4 00 ST 3 3 3 C ..C S e r ie s TJ = 1 2 5C 2 00 0 0 100 90 80 C o nd uctio n A ng le 60 50 30 60 40 90 30 1 2 0 20 1 8 0 10 0 2 00 4 00 60 0 800 A v e ra g e O n - st a t e C u rre n t (A ) Fig. 3 - Current Ratings Characteristics 1 00 0 M a x im u m A v e ra g e O n - st a t e P o w e r Lo ss (W ) ST 3 3 3 C ..C S e r ie s (D o ub le Sid e C o o le d ) R thJ-h s (D C ) = 0 .0 4 K /W 70 400 60 0 80 0 1 00 0 Fig. 5 - On-State Power Loss Characteristics 130 110 20 0 A v e ra g e O n -st a t e C u rre n t (A ) Fig. 2 - Current Ratings Characteristics 120 R M S Lim it 1 2 00 A v e ra g e O n -st a te C u rre n t (A ) M a xim u m A llo w a b le H e at sin k T e m p e ra t u re (C ) 200 400 600 800 1000 1200 1400 1600 26 0 0 24 0 0 22 0 0 20 0 0 18 0 0 16 0 0 14 0 0 12 0 0 10 0 0 800 600 400 200 0 DC 1 8 0 1 2 0 90 60 30 R M S L im it C o ndu ctio n Pe rio d S T3 3 3 C ..C Se rie s TJ = 1 2 5C 0 20 0 4 0 0 6 0 0 8 0 0 1 0 00 1 2 00 14 0 0 1 60 0 A v e ra g e O n -st a t e C u rre n t (A ) Fig. 6 - On-State Power Loss Characteristics Revision: 13-Sep-17 Document Number: 93678 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST333C..C Series www.vishay.com 0 .1 At An y Rated L oad Con dition And W ith Rated V RR M Applied Following Surge. In itial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 9500 9000 8500 8000 7500 7000 6500 6000 5500 ST333C..C Series 5000 4500 1 10 100 T ran sie n t T h e rm a l Im p e d a n c e Z thJ-hs (K / W ) Peak Half Sine W ave O n-state Current (A) 10000 Vishay Semiconductors S T3 3 3 C ..C Se r ie s S te a d y St a t e V a lu e R th J-hs = 0 .0 9 K /W (S in gle Sid e C o o le d ) 0 .0 1 R thJ-h s = 0 .0 4 K /W (D o u b le S id e C o o le d ) (D C O p e ra t io n ) 0 .0 0 1 0 .0 0 1 0 .0 1 Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 7000 6000 ST333C..C Series 1 Maximum Reverse Recovery Charge - Q rr (C) Peak Half Sine Wave O n-state Curren t (A) 8000 0.1 Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 280 260 240 220 200 180 160 140 ST333C..C Series TJ = 125 C 120 100 80 10 20 30 40 50 60 70 80 90 100 Fig. 11 - Reverse Recovered Charge Characteristics 10000 180 T = 25C J T = 125C J ST333C..C Series 100 0.5 1 1.5 2 2. 5 3 3. 5 4 4.5 5 5.5 6 6.5 Instan tan eous O n-state V oltage (V) Fig. 9 - On-State Voltage Drop Characteristics M ax im u m R e v e rse R e c o v e ry C u rre n t - Irr (A ) Instantaneous On-state Current (A) I TM = 50 0 A 3 00 A 2 00 A 10 0 A 50 A 300 Rate O f Fall O f O n-state Current - di/dt (A/s) Pulse T rain Duration (s) 1000 10 320 Maxim um Non Repetitive Surge Current V ersus Pulse Train Duration. C ontrol 11000 O f Con duction May Not Be M ain tained. Initial TJ = 125C 10000 No Voltage Reapplied Rated V RR MReapplied 9000 4000 0.01 1 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 12000 5000 0. 1 Sq u a re W a v e P u ls e D ur at io n (s) N um b e r O f E q ual A m plitud e Half C yc le C urrent Pulse s (N ) IT M = 5 00 A 3 00 A 20 0 A 1 00 A 50 A 160 140 120 100 80 ST 3 3 3 C ..C S e rie s TJ = 1 2 5 C 60 40 20 10 20 30 40 50 60 70 80 9 0 1 00 R a te O f Fa ll O f Fo rw a rd C ur re n t - d i/ d t (A / s) Fig. 12 - Reverse Recovery Current Characteristics Revision: 13-Sep-17 Document Number: 93678 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST333C..C Series www.vishay.com Vishay Semiconductors P e a k O n -st a te C u rre n t (A ) 1 E4 1 000 4 00 20 0 50 0 1 00 50 Hz 50 0 1 50 0 20 0 1 00 50 H z 15 0 0 Snubb er c ircu it R s = 1 0 o hm s C s = 0 .47 F V D = 80 % V D RM 25 00 1 E3 4 00 1 000 3 00 0 Snubb er circ uit R s = 1 0 o hm s C s = 0.4 7 F V D = 80 % V D RM 2 50 0 3 00 0 50 00 tp 1 E2 1 E1 1E2 5 00 0 ST33 3 C..C Serie s Sin uso idal pulse TC = 40C 1E3 1 E4 ST33 3C ..C Serie s Sinuso idal pulse TC = 55C tp 1 E1 1E2 1E3 1E4 Pu lse B a se w id th ( s) P ulse B a se w id th ( s) Fig. 13 - Frequency Characteristics P e a k O n - st a t e C ur re n t (A ) 1E4 Snubbe r circ uit R s = 1 0 o hm s C s = 0.4 7 F V D = 80 % V D RM 100 0 50 0 15 00 20 0 0 2 5 00 1E3 40 0 2 00 10 0 50 Hz 10 00 50 0 Snubbe r circuit R s = 1 0 o hm s C s = 0.47 F V D = 80 % V D RM 3 0 00 10 0 40 0 2 00 1 5 00 20 00 2 50 0 3 00 0 ST3 33 C.. C Se ries Trap ezo id al p ulse TC = 4 0C di/d t = 50 A/s 5 00 0 tp 1E2 1 E1 1E2 1E3 50 Hz tp 50 00 1 E4 1E 1 ST33 3C. .C Se ries Trapezo idal p ulse TC = 55C di/dt = 1 00A /s 1 E2 1 E3 1 E4 P u lse Ba se w id th (s) P u lse Ba se w id t h ( s) Fig. 14 - Frequency Characteristics P e a k O n - st a te C u rre n t (A ) 1 E4 Snubbe r circ uit R s = 1 0 o hm s C s = 0.4 7 F V D = 80 % V DR M 5 00 4 00 200 10 0 5 0 Hz 4 00 2 00 15 00 20 00 1 E3 2 50 0 1 50 0 20 00 2 50 0 tp 1E3 ST333 C.. C Se ries Trapezo id al p ulse TC = 55C di/dt = 10 0A /s 3 00 0 ST33 3 C..C Serie s Trape zoidal pulse TC = 40C d i/dt = 100 A/s 50 00 1 E2 5 0 Hz 10 0 0 Snubb er c ircuit R s = 10 o hm s C s = 0 .47 F V D = 80 % V D RM 3 00 0 1 E2 1 E1 10 0 50 0 100 0 tp 5 00 0 1E4 1E1 1E 2 1 E3 1 E4 P u lse Ba se w id th ( s) P u lse B ase w id t h ( s) Fig. 15 - Frequency Characteristics Revision: 13-Sep-17 Document Number: 93678 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST333C..C Series www.vishay.com Vishay Semiconductors 1E4 20 jo ule s pe r p ulse P e a k O n - sta t e C u rre n t (A ) 3 5 ST3 33 C Se ries Rec tang ula r pulse di/dt = 50A /s 10 tp 2 2 0 jou les p er pulse 10 5 3 1 1E3 2 0.5 1 0 .3 0 .5 0.2 0.4 0.3 1E2 0.2 tp 1E1 1E1 ST33 3C ..C Se ries Sinuso idal pulse 1E2 1 E1 1 E14E 4 1E3 1E2 1 E3 1E4 P u lse Ba se w id t h ( s) P u lse B ase w id t h ( s) Fig. 16 - Maximum On-State Energy Power Loss Characteristics Re c t a n g ula r g a t e p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< =1 s (1) (2) (3) (4) PGM PGM PGM PGM = = = = 1 0W , 2 0W , 4 0W , 6 0W , tp tp tp tp = = = = 20 m s 10 m s 5m s 3 .3 m s (a ) (b ) Tj=- 40 C Tj=12 5 C 1 Tj=25 C In st a n ta n e o u s G at e V o lt a ge ( V ) 1 00 (1) (2) (3 ) ( 4 ) VGD IG D 0 .1 0 .0 0 1 0 .0 1 D e v ic e : ST 3 3 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V ) 0 .1 1 10 1 00 In sta n t a n e o u s G at e C u rr e n t (A ) Fig. 17 - Gate Characteristics Revision: 13-Sep-17 Document Number: 93678 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST333C..C Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- ST 33 3 C 08 C H K 1 - 1 2 3 4 5 6 7 8 9 10 11 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 3 = fast turn off 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case E-PUK (TO-200AB) 8 - Reapplied dV/dt code (for tq test condition) 9 - 10 - dV/dt - tq combinations available 50 100 200 400 dV/dt (V/s) 20 10 CN DN EN --0 = eyelet terminal 12 CM DM EM FM* -15 CL DL EL FL* HL (gate and aux. cathode unsoldered leads) tq (s) 18 CP DP EP FP HP 1 = fast-on terminal 20 CK DK EK FK HK 25 ---FJ HJ (gate and aux. cathode unsoldered leads) 30 ----HH 2 = eyelet terminal * Standard part number. (gate and aux. cathode soldered leads) All other types available only on request. tq code 3 = fast-on terminal (gate and aux. cathode soldered leads) 11 - Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95075 Revision: 13-Sep-17 Document Number: 93678 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors E-PUK (TO-200AB) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 11.18 (0.44) minimum Strike distance: 7.62 (0.30) minimum 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN. C G 14.1/15.1 (0.56/0.59) A 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. Gate terminal for 1.47 (0.06) DIA. pin receptacle Note: A = Anode C = Cathode G = Gate 40.5 (1.59) DIA. MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25 5 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Revision: 12-Jul-17 Document Number: 95075 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-ST333C04CFL0 VS-ST333C04LFL0 VS-ST333C08CFM0 VS-ST333C04CFL1 VS-ST333C04CFM1 VSST333C08CFL1 VS-ST333C08CFM1 VS-ST333C08LFM1 VS-ST333C08LFL0 VS-ST333C08LFL1 VSST333C04LFL1 VS-ST333C08CFL0 VS-ST333C04LFM1 VS-ST333C04LFM0 VS-ST333C08LFM0