G E SOLID STATE oy def) 3azsoax oorza2a 4 ff T-2S7S T6401, T6411, T6421 Series File Number 459 & 30-A Silicon Triacs TERMINAL DESIGNATIONS For Power-Switching and Power Control Features; @ 800V, 125 Deg. C T; Operating High dv/at and di/dt Capability wn @ Low Switching Losses GATE * @ High Pulse Current Capability = Low Forward and Reverse Leakage @ Sipos Oxide Glass Multilayer Passivation System MTZ & Advanced Unisurface Construction vacfearas @ Precise lon Implanted Diffusion Source vecazergm 92C$-27735R1 PRESS-FIT TYPES STUD TYPES ISOLATED-STUD TYPES . T6401 SERIES T6411 SERIES T6421 SERIES These RCA triacs are gate-controlled full-wave silicon ac tions such as heating controls, motor controls, arc-welding switches. They are designed to switch from an off-state to an equipment, light dimmers, and power switching systems. on-state for either polarity of applied voltage with positive or They can also be used in air-conditioning and photocopy- nagative gate triggering voltages. ing equipment. These triacs are intended for contro! of ac loads in applica- MAXIMUM RATINGS, Absolut-Maximum Values: T6401B T6401D T6401M T6401N T6411B T6411D T6411M T6411N 64218 T6421D T6423M _ REPETITIVE PEAK OF STATE VC VOLTAGE:* Gate open, Ty = -50 t0 125C cov peevercceee cece Vorom 200 400 600 800 v RMS ON-STATE CURRENT (Conduction angle = 360); Case temperature \tiams) Te = 90C (Press-fit types) co.cc eee ree eet ecenecanee 30 A =BSC (Stud types) wi see ccc cceneseerenvee bac 30 A = B0G (Isolated-stud types) 22... .. cece eee bees 30 A For other conditions ...... . ______. See Fig. 3 PEAK SURGE (NON-REPETITIVE} ON STATE CURRENT: lism For one cycle of applied principal voltage GO Hz (sinusoidal) 20... eee cc ee eee teens 300 A 50 Hz (Sinusoidal)... ccc ccc r seer ere vee teeane 265 A For more than one cycle of applied principal vollage vveene ____-_____. See Fig. 4 RATE-OF-CHANGE OF ON-STATE CURRENT: di/dt Vom = Vornom: gr = 200 mA, t, = 0.1 ws (See Fig. 18) ....... 100 Alus FUSING CURRENT (for triac protection): Ty = -40 to 100C, t= 1.251010 MS wo cece ree reece reeee rt 450 As PEAK GATE-TRIGGER CURRENT: let For tus max., See Fig. 7 css scer sec receeteeeesacrenee 12 A GATE POWER DISSIPATION: PEAK (For 1 ys max., Ion = 4 A, See Fig. 7)... . eee eee Pou 40 Ww AVERAGE wo ccc cst ee nee ece nerve ree teeteneeneneenne Poy 0.75 Ww TEMPERATURE RANGE:4 ESS 5) -\ 6 | - Tig . -65 to & 160 C Operating (Case) ....cs eee peeve ease neeeens Tc a. -65 10 100 S TERMINAL TEMPERATURE (During soldering): Tr For 10s max. (terminals and case) .....ecscecrceee noes 225 C STUD TORQUE: Recommended ...ceecccscecsreone Lee eee enero eee 35 in-lb Maximum (DO NOT EXCEED) 2... ccc reece uceee eeeee 50 __* in-Ib *For either polarity of main terminal 2 voltage (Var) with reference to main terminal 1. "For either polarity to gate voltage (V.,) with reference to main terminal 1. 4For temperature measurement reference point, sea Dimensional Outline, 830 _ 1366 6-033875081 GE SOLID STATE gy pe) 3a750a1 0017824 b f-25-/5 Trlacs T6401, T6411, T6421 Series ELECTRICAL CHARACTERISTICS, At Maximum Ratings Unless Otherwise Specified, and at Indicated Temperature LIMITS For All Types CHARACTERISTIC SYMBOL Unless Otherwise Specified UNITS Min. Typ. Max. Peak Off-Stale Current:* Gate open, T, =125C, Vorom = Max. rated value lprom _ 02 4 mA Maximum On-State Voltage: For iy = 100 A (peak), To= 25C vo. .cccecccsccsneeueveaues Vim - 21 25 Vv DC Holding Current:* Gate open, Initial principal current = 150 mA (DC), vp = 12V: Te 25 vices icc ceeceec erect eee eeueeseusenentuneas tho _ 25 60 mA For other case temperatures ..........0.005 veer eeeoeens See Fig. 6 Critical Rate-of-Rise of Commutation Voltage:* For Vo = Vorom I riams)= 30 A, commutating di/dt = 16 A/ms, gate unenergized (See Fig. 14): Te 2 90C (Press-fit types) ...... 0. ccc eee vcecees 3 20 =B5C (Stud types) ...... cece esse cee ees dv/dt 3 20 _ Vips = 80C (Isolated-stud types) 3 20 Critical Rate-of-Rise of Off-State Voltage:* For Vo = Vonow exponential voltage rise, gate open, Te =125C: T6401B, T6411B, T6421B ............, seb eevaveneveeens 40 200 ~ T6401D, T6441D, T6421D oo. ccc cece cece ees bv eeeenees dv/at 25 150 - V/us T6401M, T6411M, T6421M voice cece cess eucecuseuscues 20 100 - T6401N, TE41N occ cece cece aeeeeneesavnes baseeneee 10 50 DC Gate-Trigger Current:*8 Mode Vente Ve For vp = 12 V (DC), + positive positive 15 50 R. = 309, Wir negative negative _ 20 50 Te = 25C I- positive negative ler _ 30 80 mA in* negative _ positive _ 40 80 For other case temperatures ............00. se eeecerrnses See Figs. 8 & 9 DC Gate-Trigger Voltage:*# For vp = 12 V(DC), R, = 309, Tez AEG ci ccccccccteneerecveves Ce eneenae pene teres Vv _ 1,35 2.5 Vv For other case temperatures .........cccseeeves beeeeas or See Fig. 10 FOr Vo = Vorom AL = 125 2, Te= 100C 0.2 _ _ Gate-Controtled Turn-On Time: (Delay Time = Rise Time) For Vo = Vorom lor = 200 mA, t,= 0.1 ys, ir= 45 A (peak), Te = 25C (See Figs. 7& 12) oo... eee ee cans foe 1.7 3 us Thermal Resistance, Junction-to-Case: Steady-State Press-fit types ....... Danner cnace eee senetracees bees - ad 0.8 Stud Lo. cece eee e cece ev ecnsteeesnans Leen Raic ~ _ 0.9 CAV Transient (Press-fit & stud types) ,..... deeeeee Dad eeeeenaee See Fig. 2 Thermal Resistance, Junction-to-Hex (Stud, See Dim. Outline): Steady-State (Isolated-stud types) ........ cc cp cece cue ees Ran _ 1 For either polarity of main terminal 2 voltage (Visr2) with reference to main terminal 1, : "For either polarity of gate voltage (Vg) with reference to main terminal 1. 831 1367 6-04 es Bt ee soe OS3875081 GE SOLID STATE Triace OL DEM 3875081 0017825 & I +-2s-/s T6401, T6411, T6421 Series CURRENT WAVEFORM: SINUSOIDAL LOAD: RESISTIVE OR JNOUCTIVE CONDUCTION ANGLE = 360 a ao CONDUCTION ANGLE <0; 68 a o y # n A a Zt wu = WV, uo we ot $ 7S ne 5 w o Ww a JUNCTION - TO-CASE THERMAL RESISTANCE ny oS AVERAGE POWER DISSIPATIONW 3 72 =I 30 40 0 10 0 ' FULL-CYCLE RMS ON-STATE CURRENT [t TIME AFTER APPLICATION OF RECTANGULAR POWER PULSE ~SECONOS TiRMS}}4 92L5-2263R! 9288-3ei0 : vet ge, Fig, 2 Transient junction-to-case thermal resistance vs. Fig. | Power dissipation vs, on-state current, time. LOAD: RESISTIVE : RMS ON-STATE CURRENT [trtamsil*304 AT ? LOAD: RESISTIVE OR INDUCTIVE SPECIFIED CASE TEMP. | CONDUCTION ANGLE = 360 300 +, | CASE TEMPERATURE? MEASURED iz | | LEY | | | | | | AS SHOWN ON DIMENSIONAL OUTLINES y > aN GATE CONTROL MAY BE LOST i 250-a de OURING ANO MWEDIATELY FOLLOWING } CONDUCTION ANGLE AK SURGE CURRENT INTERVAL. @ fret I SN OVERLOAD. MAY NOT BE REPEATED} = YN UNTIL JUNCTION TEMPERATURE HAS pe R ORL RETURNED TO STEADY-STATE r a Tey fi R. LUE, 5 Th. 12 15 x ty w SoH: aA SS st ; oy Z mM RL 5 FULL CYCLE RMS ON-STATE CURRENT (triamsi] A 4 2 4 3 92$S-38i2R3 | to 0 'o SURGE CURRENT DURATION FULL CYCLES 9258-3815R2 Fig. 3 Maximum allowable case temperature vs. on-state Fig. 4 Peak surge on-state current vs. surge current current. duration. E TEMPERATURE (Tc) = 25C tiga DC HOLDING CURRENT (POSITIVE OR INSTANTANEOUS ON-STATE CURRENT (POSITIVE OR NEGATIVE) 1 2 25 =30 - INSTANTANEOUS ON-STATE VOLTAGE (yy)-V CASE TEMPERATURE (Tc }-*C ATIVE . {POSITIVE OR NEGATIVE) 92ss-3et 92S~)s200A1 Fig. 5 On-state current vs. on-state voltage. Fig. 6 DC holding current vs. case temperature. 832 __ 1368 G-053875081 G E SOLID STATE 2254/5 + O1E 17826 OD G E SOLID STATE O11 GATE=CONTROLLED TURN-ON TIME (197}ps OC GATE-TRIGGER CURRENT {Igy)mA 92LS-2266R2 Fig. 7 Turn-on lime vs, gate trigger current. eT PRINCIPAL OG VOLTAGE 12 V LOAD < 12 SL, RESISTIVE < i : oO we E z i e 2 3 = ww o 9 = e w w < o CASE TEMPERATURE (To }-~*C 925 ~15201 Fig. 9 DC gate-trigger current vs. case temperature (1- and lii* modes). Triacs DE 3a7soai O01782b O 16401, T6411, T6421 Series DC GATE TRIGGER CURRENT (Igq7)mA 770 -60 -50-40 -30-20-10 0 10 20 30 40 CASE TEMPERATURE (Tc}*C 92CS- 15199 Fig. 8 OC gate-trigger current vs. case temperature (1* and lll- modes). PRINCIPAL DG VOLTAGE #12 V LOAD =12 2, RESISTIVE TRIGGERING MODES: ALL i & @ 8 3 2 = z 2 ze w YL z a = 2 t = 6 CASE TEMPERATURE (T}*C. 928-1S202At Fig. 10 DC gate-trigger voltage vs. case temperature. AC INPUT 120v |asov | 240v VOLTAGE GOH: | GOH: | S0Hz c O.1uF | 0.4 Om) . _RELFIUTER ' gon |souy. | aay Re roy Pa | O.1ue foe | ote WN t rity oe Es 82 ToWv | tow | tov RCA to ! R 100k 2}200K 2 |260K 2 Ay TRIACH Age, ! ' 0 1 aw |W Ww iste | m4 cpt AC INPUT TAGLEN ta Fant VOLTAGE R 2.2KN13.3KR | 3.3K2 i) teett t \ 2 Viaw | aw | 1aw I poset | R IKE | 18KO | KN ' It I 3 Vow | aw | 2w o1Ac + + Lypeew Cone ee J Our 10.1 1 0.1 I snuseen |S | 200v | 40ov tony cy Crs SNUSBER NETWORK FOR INOUCTIVE NETWORK 10082 [ 1008) | LOADS OR WHEN COMMUTATING VOLTAGE As Taw | 1/2 Va idvidt} CHARACTERISTIC IS EXCEEDED, Ieee] OAL | Our | Our AFI 200V | 400V Vv FILTER 92CS. 1520984 Let} 100QuH POG. | 200uH 64018 | T40;D| 164010 . . noes os ae RCA TRIACS | Teaisa | Teati0} Tes110 Fig. 11 - Typical phase-control circuit for lamp dimming, heat Tea2ie | re42iD} Te421D control, and universal-moior speed control. Typical values for lamp dimming circuits. . 833aay -- 3875081 GE SOLID STATE iriacs T6401, T6411, T6421 Series tgt * tg +t, 92CS-13366R2 Fig. 12 Relationship between off-state voltage, on-state currant, and gate-trigger voltage showing reference points for definition of turn-on time (t,:). SUPPLY VOLTAGE CUARENT COMMUTATING ~ dat PRINCIPAL VOLTAGE I i 1 | | | | 92LS-2409A3 Fig. 14 Relationship between supply voltage and principle currant {inductive load) Showing reference points for definition of commutating voltage (dv/dt). 634 O1 Dey 347508) 0017827 1 T2ZS-/5 s2ce (Toes Fig. 138 Rate of change of on-state current with time (defining di/dt}. MOUNTING CONSIDERATIONS Mounting of press-fit package types depends upon an interference fit between the thyristor case and the heat sink. As the thyristor is forced into the heat-sink hole, metal from the heat sink flows into the knuri voids of the thyristor case. The resultant close contact between the heat sink and the thyristor case assures low thermai and electrical resistances. A recommended mounting method shows press-fit knurl and heat-sink hole dimensions. !f these dimensions are maintained, a worst-case condition of 0.0085 in. (0.2159 mm) interference fit will allow press-fit insertion below the maximum allowable insertion force of 800 pounds. A slight chamfer in the heat-sink hole will help center and guide the press-fit package properly into the heat sink. The insertion tool should be a hollow shaft having an Inner diameter of 0.380 + 0.010 in. (9.65 + 0.254 mm) and an outer diameter of 0.500 in. (12.70 mm). These dimensions provide sufficient clearance for the leads and assure that no direct force will be applied to the glass seal of the thyristor. The press-fit package Is not restricted to a single mounting arrangement; direct soldering and the use of epoxy adhesives have been successfully employed. The press-tit case is tin-plated to facilitate direct soldering to the heat sink. A 60-40 solder should be used and heat should be applied only long enough to allow the solder to flow freely, 1370 G~0?7