MBR12020CT thru MBR12040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 120 A Features * High Surge Capability * Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Symbol Conditions MBR12020CT (R) MBR12030CT (R) MBR12035CT (R) MBR12040CT (R) Unit VRRM 20 30 35 40 V VRMS 14 21 25 28 V VDC 20 30 35 40 V 120 120 120 120 A 800 800 800 800 A -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 C C IF TC 140 C Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms Operating temperature Storage temperature Tj Tstg Electrical characteristics, at Tj = 25 C, unless otherwise specified Symbol Conditions Diode forward voltage VF Reverse current IR IF = 60 A, Tj = 25 C VR = 20 V, Tj = 25 C VR = 20 V, Tj = 125 C Parameter MBR12020CT (R) MBR12030CT (R) MBR12035CT (R) MBR12060CT (R) 0.65 3 200 0.65 3 200 0.65 3 200 0.65 3 200 0.8 0.8 0.8 0.8 Unit V mA Thermal characteristics Thermal resistance, junction - case www.genesicsemi.com RthJC 1 C/W MBR12020CT thru MBR12040CTR www.genesicsemi.com 2