V
RRM
= 20 V - 100 V
I
F
= 120 A
Features
• High Surge Capability Twin Tower Package
• Types up to 100 V V
RR
M
Parameter Symbol MBR12020CT (R) MBR12030CT (R) Unit
Repetitive peak reverse
V
20
30
V
Silicon Power
Schottk
y
Diode
Conditions
40
MBR12020CT thru MBR12040CTR
MBR12040CT (R)
35
MBR12035CT (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
voltage
V
RRM
20
30
V
RMS reverse voltage V
RMS
14 21 V
DC blocking voltage V
DC
20 30 V
Continuous forward
current I
F
120 120 A
Operating temperature T
j
-40 to 175 -40 to 175 °C
Storage temperature T
stg
-40 to 175 -40 to 175 °C
Parameter Symbol MBR12020CT (R) MBR12030CT (R) Unit
Diode forward voltage 0.65 0.65
33
200 200
Thermal characteristics
Thermal resistance,
junction - case R
thJC
0.8 0.8 °C/W
-40 to 175 -40 to 175
T
C
= 25 °C, t
p
= 8.3 m
s
40
28
4035
-40 to 175
MBR12060CT (R)
33
MBR12035CT (R)
0.8
V
R
= 20 V, T
j
= 125 °C
0.8
0.65 0.65
200 mA
V
V
R
= 20 V, T
j
= 25 °C
I
F
= 60 A, T
j
= 25 °C
T
C
≤ 140 °C
Conditions
35
25
800 800
-40 to 175
120 120
800
200
A800
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive
forward current, Half
Sine Wave
I
F,SM
Reverse current I
R
V
F
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MBR12020CT thru MBR12040CTR
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