NEC / PNP SILICON POWER TRANSISTOR 2SA1396 DESCRIPTION FEATURES The 2SA1396 is PNP silicon epitaxial transistor designed for switch- ing regulator, OC-DC converter and high frequency power amplifier application. @ Easy mount by eliminating Insulation Sheet and Bushing. Low Collector Saturation Voltage. PACKAGE DIMENSIONS | in millimeters (inches) 4.7 MAX. @ High Switching Speed. Complementary to 2SC3568. ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature ...... Junction Temperature ..... Leen eee 55 to + 150C eee eee 150C Maximum "Maximum Power Dissipation (T, = 25 C) Total Power Dissipation .......... 0008 ee eee Maximum Voltages and Currents (T,=25 c) Veso VcEO VeBO 'c(pe) Ig(pc) Base Current (DC) ELECTRICAL CHARACTERISTICS (T, = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (OC) le(pulse) Collector Current (pulse)* * PW < 300 us, Duty Cycle = 10% 10.5. MAX. (0.413 MAX) (0.185) 3.0 MAX. 720.2 (0.118) j fozze| h 0 J 1740.2 (0.669) 0.80.1 1350. SED. 2.5401 (0.031) (0.051) (0.098) 254 [ete (0.059) tae I Base tor 2 Collector . a Emi DOG mitter SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT. TEST CONDITIONS fon wee ve Hs I=-5.0 A, Igy =Ig2=-0.5 A @ . tstg oregon Hs Ry =10 2, Vocs50 V tf Fall Time 05 BS heey DC Current Gain** 40 200 - VcE=5.0V,IC=O.5A hee? DC Current Gain** 40 200 _ Vee =5.0 V, 1c =-3.0A hres DC Current Gain** 20 _ VcE=-5.0V,I=-5.0A VCE (sat) Collector Saturation Voltaga** 0.6 Vv Iq=-5.0A,!g=O5A VBE (sat) Base Saturation Voltage** 15 Vv I=-5.0A,Igp=-O5A Collector to Emitter Sustaining - =5, Igp=0.5 A,L=1 mH VcEO (SUS) Voltage 100 Vv i=-5.0A,lg=0O5A,L=1m Collector to Emitter Sustaining _ Ic =5.0 A, 1p, =Ip2=-05 A,Tg=125 C, Vcex (SUS}1 Voltage 100 Vv L=180 nH, Clamped Collector to Emitter Sustaining I=10A, Igy =1.0 A, ~!B2=0.5 A, VCEX (SUS)2 Voitage 100 Vv L = 180 pH, Clamped IcBo Collector Cutoff Current 10 uA Vcopg =100 V,ie=0 ICER Collector Cutoff Current 1.0 mA VcE = 100 V, Ree =51 8, Ta= 125 c IcEx1 Collector Cutoff Current 10 BA Voce =100 V, Vge(oFF) 71.5 V IcEx2 Collector Cutoff Current 10 mA VcE = 100 V, VBE(OFF) 71.5 V, Ta= 125 c lEBO Emitter Cutoff Current 10 BA Veg =5.0V,I=0 wpe gs **PW < 350 us, Duty Cycle < 2 % Classification of hres Rank M L K Range 40 to 80 60 to 120 100 to 200 | +..+ Conditions: Vee =5.0 V, I=-3.0A 154 NEC 2SA1396 TYPICAL CHARACTERISTICS (T, =25 C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE FORWARD BIAS SAFE OPERATING AREA 100 Te =25 C 25 SS Single Pulse 'S \ -10 4g 20 15 N\ 10 N 5 \ 0.01 0 25 50 75 100 125 150 175 , 1 = -1 Te Case TemperatureC OTN -1 2, PT--Total Power DissipationW IcCollector CurrentmA VceECollector to Emitter VoltageV = REVERSE BIAS SAFE OPERATING oO TRANSIENT THERMAL RESISTANCE AREA | Vce=10V 10 3 Single Pulse = -8 1000 <= & = < = 2 6 a y E 100) : Ee <= Tt s 4 5 aC c= 25 C 3 a > oO < ee -2 9 Ao oO 7 ~ 0. Qo -20 40 -60 80-100120-140 + 01 ; = 0.001 0.01 O1 1 10 100 1000 VceEColiector to Emitter VoltageV od PWPulse Widths DC CURRENT GAIN vs. BASE AND COLLECTOR SATURATION COLLECTOR CURRENT _ > : VOLTAGE vs. COLLECTOR CURRENT CE=- 2 > . = B Pulsed s | -50 Q = 2 | oO cs FS # = > -10 VBE (sat = 5 Zs & 6 as 8 BS e lu a a Oo 4 ~ = oa 1 | 2s ao 2 2-00 0.01 -O.1 -1.0 10 Wl uw O0.01 -O1 ~1.0 -10 iCollector CurrentA > > \Collector CurrentA dTPercentage of Rated Current--% IcCollector Current~-A tstg-Storage Timeys DERATING CURVE OF SAFE OPERATING AREA 100 80 NS . Q ny 60 Sp. . Oo, | O v] 40 6S A & 20 0 50 100 150 Te---Case Temperature-~ C COLLECTOR CURRENT vs, COLLECTOR TO EMITTER VOLTAGE S cs / 0 0 -1 -2 -3 -4 ~5 VcECollector to Emitter Voitage --V TURN ON TIME, STORAGE AND FALL TIME vs. COLLECTOR CURRENT 1 I=10-lg=~ 10-igo t-Fall Timejys oS o = 1.0 -10 Ic Collector Current--A i 9 = 155 2SA1396 SWITCHING TIME (ton, tstg, te) TEST CIRCUIT 156 a U ViN PW+50 us Duty Cyclex2 % VBB=5 V RL=10 Q NEC 10 % Ic 90 %|4 ton . tstg tf