SMUN2211T1G - ON Semiconductor

August, 2012 − Rev. 4

1Publication Order Number:

DTC114E/D

MUN2211, MMUN2211L,

MUN5211, DTC114EE,

DTC114EM3, NSBC114EF3

Digital Transistors (BRT)

R1 = 10 kW, R2 = 10 kW

NPN Transistors with Monolithic Bias

Resistor Network

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

Features

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C)

Rating Symbol Max Unit

Collector−Base Voltage VCBO 50 Vdc

Collector−Emitter Voltage VCEO 50 Vdc

Collector Current − Continuous IC100 mAdc

Input Forward Voltage VIN(fwd) 40 Vdc

Input Reverse Voltage VIN(rev) 10 Vdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

PIN 1

BASE

(INPUT)

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

SC−75

CASE 463

STYLE 1

MARKING DIAGRAMS

XXX = Specific Device Code

M = Date Code*

G=Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

SC−59

CASE 318D

STYLE 1

SOT−23

CASE 318

STYLE 6

SC−70/SOT−323

CASE 419

STYLE 3

SOT−723

CASE 631AA

STYLE 1

SOT−1123

CASE 524AA

STYLE 1

XX MG

XXX MG

XX MG

XX M

X M

XX M

PIN CONNECTIONS

MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3

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Table 1. ORDERING INFORMATION

Device Part Marking Package Shipping†

MUN2211T1G, SMUN2211T1G 8A SC−59 3,000 / Tape & Reel

MUN2211T3G, SMUN2211T3G 8A SC−59 10,000 / Tape & Reel

MMUN2211LT1G, SMMUN2211LT1G A8A SOT−23 3,000 / Tape & Reel

MMUN2211LT3G, SMMUN2211LT3G A8A SOT−23 10,000 / Tape & Reel

MUN5211T1G, SMUN5211T1G 8A SC−70/SOT−323 3,000 / Tape & Reel

SMUN5211T3G 8A SC−70/SOT−323 10,000 / Tape & Reel

DTC114EET1G, SDTC114EET1G 8A SC−75 3,000 / Tape & Reel

DTC114EM3T5G 8A SOT−723 8,000 / Tape & Reel

NSBC114EF3T5G A SOT−1123 8,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Figure 1. Derating Curve

AMBIENT TEMPERATURE (°C)

1251007550250−25−50

100

150

200

250

300

PD, POWER DISSIPATION (mW)

150

(1) (2) (3) (4) (5)

(1) SC−75 and SC−70/SOT323; Minimum Pad

(2) SC−59; Minimum Pad

(3) SOT−23; Minimum Pad

(4) SOT−1123; 100 mm2, 1 oz. copper trace

(5) SOT−723; Minimum Pad

MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3

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Table 2. THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

THERMAL CHARACTERISTICS (SC−59) (MUN2211)

Total Device Dissipation

TA = 25°C (Note 1)

(Note 2)

Derate above 25°C (Note 1)

(Note 2)

PD230

338

1.8

2.7

mW/°C

Thermal Resistance, (Note 1)

Junction to Ambient (Note 2)

RqJA 540

370

°C/W

Thermal Resistance, (Note 1)

Junction to Lead (Note 2)

RqJL 264

287

°C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS (SOT−23) (MUNN2211L)

Total Device Dissipation

TA = 25°C (Note 1)

(Note 2)

Derate above 25°C (Note 1)

(Note 2)

PD246

400

2.0

3.2

mW/°C

Thermal Resistance, (Note 1)

Junction to Ambient (Note 2)

RqJA 508

311

°C/W

Thermal Resistance, (Note 1)

Junction to Lead (Note 2)

RqJL 174

208

°C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5211)

Total Device Dissipation

TA = 25°C (Note 1)

(Note 2)

Derate above 25°C (Note 1)

(Note 2)

PD202

310

1.6

2.5

mW/°C

Thermal Resistance, (Note 1)

Junction to Ambient (Note 2)

RqJA 618

403

°C/W

Thermal Resistance, (Note 1)

Junction to Lead (Note 2)

RqJL 280

332

°C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS (SC−75) (DTC114EE)

Total Device Dissipation

TA = 25°C (Note 1)

(Note 2)

Derate above 25°C (Note 1)

(Note 2)

PD200

300

1.6

2.4

mW/°C

Thermal Resistance, (Note 1)

Junction to Ambient (Note 2)

RqJA 600

400

°C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS (SOT−723) (DTC114EM3)

Total Device Dissipation

TA = 25°C (Note 1)

(Note 2)

Derate above 25°C (Note 1)

(Note 2)

PD260

600

2.0

4.8

mW/°C

Thermal Resistance, (Note 1)

Junction to Ambient (Note 2)

RqJA 480

205

°C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 Inch Pad.

3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.

4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.

MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3

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Table 2. THERMAL CHARACTERISTICS

Characteristic UnitMaxSymbol

THERMAL CHARACTERISTICS (SOT−1123) (NSBC114EF3)

Total Device Dissipation

TA = 25°C (Note 3)

(Note 4)

Derate above 25°C (Note 3)

(Note 4)

PD254

297

2.0

2.4

mW/°C

Thermal Resistance, (Note 3)

Junction to Ambient (Note 4)

RqJA 493

421

°C/W

Thermal Resistance, Junction to Lead (Note 3) RqJL 193 °C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 Inch Pad.

3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.

4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.

Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

− − 100

nAdc

Collector−Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

− − 500

nAdc

Emitter−Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

− − 0.5

mAdc

Collector−Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO 50 − −

Vdc

Collector−Emitter Breakdown Voltage (Note 5)

(IC = 2.0 mA, IB = 0)

V(BR)CEO 50 − −

Vdc

ON CHARACTERISTICS

DC Current Gain (Note 5)

(IC = 5.0 mA, VCE = 10 V)

hFE 35 60 −

Collector−Emitter Saturation Voltage (Note 5)

(IC = 10 mA, IB = 0.3 mA)

VCE(sat)

− − 0.25

Vdc

Input Voltage (off)

(VCE = 5.0 V, IC = 100 mA)

Vi(off)

−1.2 −

Vdc

Input Voltage (on)

(VCE = 0.2 V, IC = 10 mA)

Vi(on)

−2.0 −

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

VOL

− − 0.2

Vdc

Output Voltage (off)

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

VOH 4.9 − −

Vdc

Input Resistor R1 7.0 10 13 kW

Resistor Ratio R1/R20.8 1.0 1.2

5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3

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TYPICAL CHARACTERISTICS

MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3

Figure 2. VCE(sat) vs. IC

1002030

IC, COLLECTOR CURRENT (mA)

0.1

40 50

Figure 3. DC Current Gain

Figure 4. Output Capacitance

0.1

0.01

0.001

020 4050

IC, COLLECTOR CURRENT (mA)

1000

100

1 10 100

IC, COLLECTOR CURRENT (mA)

Figure 5. Output Current vs. Input Voltage

100

0.1

0.01

0.001 01234

Vin, INPUT VOLTAGE (V)

56 78 910

Figure 6. Input Voltage vs. Output Current

010 203040

3.6

2.8

0.4

1.2

VR, REVERSE VOLTAGE (V)

VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)

IC/IB = 10

TA = −25°C

75°C

25°C

VCE = 10 V

TA = 75°C

−25°C

25°C

hFE, DC CURRENT GAIN

f = 10 kHz

IE = 0 V

TA = 25°C

0.8

1.6

2.0

2.4

3.2

Cob, OUTPUT CAPACITANCE (pF)

VO = 5 V

TA = 75°C−25°C

25°C

IC, COLLECTOR CURRENT (mA)

VO = 0.2 V

Vin, INPUT VOLTAGE (V)

TA = 75°C

−25°C

25°C

MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3

http://onsemi.com

TYPICAL CHARACTERISTICS − NSBC114EF3

Figure 7. VCE(sat) vs. ICFigure 8. DC Current Gain

IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

403020 50100

0.01

0.1

1001010.1

100

1000

Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage

VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V)

50403020100

0.4

0.8

1.2

1.6

2.0

2.4

65743210

0.01

0.1

100

Figure 11. Input Voltage vs. Output Current

IC, COLLECTOR CURRENT (mA)

4030 5020100

0.1

100

VCE(sat), COLLECTOR−EMITTER

VOLTAGE (V)

hFE, DC CURRENT GAIN

Cob, OUTPUT CAPACITANCE (pF)

IC, COLLECTOR CURRENT (mA)

Vin, INPUT VOLTAGE (V)

IC/IB = 10

150°C

−55°C

25°C

VCE = 10 V

150°C

−55°C

25°C

f = 10 kHz

IE = 0 V

TA = 25°C

VO = 5 V

150°C

−55°C

25°C

VO = 0.2 V

150°C

−55°C

25°C

MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3

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PACKAGE DIMENSIONS

SC−59

CASE 318D−04

ISSUE H

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

2.4

0.094

0.95

0.037

0.95

0.037

1.0

0.039

0.8

0.031 ǒmm

inchesǓ

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

MIN NOM MAX MIN

MILLIMETERS

1.00 1.15 1.30 0.039

INCHES

A1 0.01 0.06 0.10 0.001

b0.35 0.43 0.50 0.014

c0.09 0.14 0.18 0.003

D2.70 2.90 3.10 0.106

E1.30 1.50 1.70 0.051

e1.70 1.90 2.10 0.067

L0.20 0.40 0.60 0.008

2.50 2.80 3.00 0.099

0.045 0.051

0.002 0.004

0.017 0.020

0.005 0.007

0.114 0.122

0.059 0.067

0.075 0.083

0.016 0.024

0.110 0.118

NOM MAX

MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3

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PACKAGE DIMENSIONS

SC−70 (SOT−323)

CASE 419−04

ISSUE N

STYLE 3:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

AA2

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.05 (0.002)

1.9

0.075

0.65

0.025

0.65

0.025

0.9

0.035

0.7

0.028 ǒmm

inchesǓ

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

MIN NOM MAX MIN

MILLIMETERS

0.80 0.90 1.00 0.032

INCHES

A1 0.00 0.05 0.10 0.000

A2 0.70 REF

b0.30 0.35 0.40 0.012

c0.10 0.18 0.25 0.004

D1.80 2.10 2.20 0.071

E1.15 1.24 1.35 0.045

e1.20 1.30 1.40 0.047

0.035 0.040

0.002 0.004

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

NOM MAX

2.00 2.10 2.40 0.079 0.083 0.095

e1 0.65 BSC

0.38

0.028 REF

0.026 BSC

0.015

0.20 0.56 0.008 0.022

MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3

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PACKAGE DIMENSIONS

SC−75/SOT−416

CASE 463

ISSUE F

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

0.20 (0.008) D

−E−

−D−

3 PL

0.20 (0.008) E

DIM MIN NOM MAX

MILLIMETERS

A0.70 0.80 0.90

A1 0.00 0.05 0.10

C0.10 0.15 0.25

D1.55 1.60 1.65

e1.00 BSC

0.027 0.031 0.035

0.000 0.002 0.004

0.004 0.006 0.010

0.059 0.063 0.067

0.04 BSC

MIN NOM MAX

INCHES

0.15 0.20 0.30 0.006 0.008 0.012

L0.10 0.15 0.20

1.50 1.60 1.70

0.004 0.006 0.008

0.061 0.063 0.065

0.70 0.80 0.90 0.027 0.031 0.035

0.787

0.031

0.508

0.020 1.000

0.039

ǒmm

inchesǓ

SCALE 10:1

0.356

0.014

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

1.803

0.071

MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3

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PACKAGE DIMENSIONS

SOT−723

CASE 631AA−01

ISSUE D

DIM MIN NOM MAX

MILLIMETERS

A0.45 0.50 0.55

b0.15 0.21 0.27

b1 0.25 0.31 0.37

C0.07 0.12 0.17

D1.15 1.20 1.25

E0.75 0.80 0.85

e0.40 BSC

H1.15 1.20 1.25

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

−Y−

−X−

X0.08 Y

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

L2 0.15 0.20 0.25

0.29 REF

TOP VIEW

BOTTOM VIEW

SIDE VIEW

RECOMMENDED

DIMENSIONS: MILLIMETERS

0.40

1.50

PACKAGE

OUTLINE

0.27

0.52

3X 0.36

MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3

http://onsemi.com

PACKAGE DIMENSIONS

SOT−1123

CASE 524AA

ISSUE C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH. MINIMUM LEAD THICKNESS IS THE

MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR GATE BURRS.

DIM MIN MAX

MILLIMETERS

A0.34 0.40

b0.15 0.28

c0.07 0.17

D0.75 0.85

E0.55 0.65

0.95 1.05

L0.185 REF

−Y−

−X−

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

b1 0.10 0.20

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

0.35 0.40

TOP VIEW

SIDE VIEW

BOTTOM VIEW

DIMENSIONS: MILLIMETERS

1.20

0.26

3X 0.34

PACKAGE

OUTLINE

2X b1

0.08 XY

L2 0.05 0.15

0.20

0.38

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