MMBTA13 and MMBTA14 Vishay Semiconductors New Product formerly General Semiconductor Darlington Transistors (NPN) Collector Base TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Emitter Top View .056 (1.43) .052 (1.33) 3 1 2 Mounting Pad Layout 0.031 (0.8) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .016 (0.4) .007 (0.175) .005 (0.125) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95) max. .004 (0.1) 0.035 (0.9) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Features * NPN Silicon Darlington Transistor for switching and amplifier applications. * High collector current * High current gain * These transistors are also available in the TO-92 case with the type designation MPSA13 & MPSA14 0.037 (0.95) 0.037 (0.95) Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: 1M for MMBTA13 1N for MMBTA14 Packaging Codes/Options: E8/10K per 13" reel (8mm tape), 30K/box E9/3K per 7" reel (8mm tape), 30K/box Maximum Ratings and Thermal Characteristics (TC = 25C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V IC 300 mA Collector Current (1) Ptot 225 300(2) mW RJA 556(1) 417(2) C/W Maximum Junction Temperature Tj 150 C Storage Temperature Range TS -55 to +150 C Power Dissipation at TA = 25C(3) Thermal Resistance Junction to Ambient Air(3) Notes: (1) On FR-5 board (2) On alumina substrate (3) Valid provided that leads are kept at ambient temperature Document Number 88229 10-May-02 www.vishay.com 1 MMBTA13 and MMBTA14 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TC = 25C unless otherwise noted) Parameter Symbol Minimum Maximum Unit Collector-Emitter Breakdown Voltage at IC = 100 A, IB = 0 V(BR)CEO 30 - V Emitter Cutoff Current VEB = 10 V, IC = 0 IEBO - 100 nA Collector Cutoff Current VCB = 30 V, IE = 0 ICBO - 100 nA Collector-Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA VCEsat - 1.5 V Base-Emitter On Voltage at IC = 100 mA, VCE = 5.0V VBE(on) - 2.0 V hFE 5000 10000 - - - - 10000 20000 - - - - 125 - MHZ DC Current Gain at VCE = 5.0 V, IC = 10 mA at VCE = 5.0 V, IC = 100 mA MMBTA13 MMBTA14 MMBTA13 MMBTA14 Gain-Bandwidth Product at VCE = 5.0 V, IC = 10 mA, f = 100 MHZ www.vishay.com 2 fT Document Number 88229 10-May-02