MMBTA13 and MMBTA14
Vishay Semiconductors
for merly General Semiconductor
Document Number 88229 www.vishay.com
10-May-02 1
New Product
Darlington T ransistors (NPN)
Mounting Pad Layout
Collector
Base
Emitter
Features
• NPN Silicon Darlington Transistor for
switching and amplifier applications.
• High collector current • High current gain
• These transistors are also available in the TO-92
case with the type designation MPSA13 & MPSA14
Maximum Ratings and Thermal Characteristics(TC= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCES 30 V
Emitter-Base Voltage VEBO 10 V
Collector Current IC300 mA
225(1)
Power Dissipation at TA= 25°C(3) Ptot 300(2) mW
556(1)
Thermal Resistance Junction to Ambient Air(3) RΘJA 417(2) °C/W
Maximum Junction Temperature Tj150 °C
Storage Temperature Range TS–55 to +150 °C
Notes:
(1) On FR-5 board
(2) On alumina substrate
(3) Valid provided that leads are kept at ambient temperature
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code:
1M for MMBTA13
1N for MMBTA14
Packaging Codes/Options:
E8/10K per 13”reel (8mm tape), 30K/box
E9/3K per 7”reel (8mm tape), 30K/box
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
.016 (0.4)
.056 (1.43)
.037(0.95).037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
12
3Top Vie w
.102 (2.6)
.007 (0.175)
.045 (1.15)
.110 (2.8)
.052 (1.33)
.005 (0.125)
.094 (2.4)
.037 (0.95)
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
MMBTA13 and MMBTA14
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88229
210-May-02
Electrical Characteristics(TC= 25°C unless otherwise noted)
Parameter Symbol Minimum Maximum Unit
Collector-Emitter Breakdown Voltage
at IC= 100 µA, IB= 0 V(BR)CEO 30 –V
Emitter Cutoff Current
VEB = 10 V, IC= 0 IEBO –100 nA
Collector Cutoff Current
VCB = 30 V, IE= 0 ICBO –100 nA
Collector-Emitter Saturation Voltage
at IC= 100 mA, IB= 0.1 mA VCEsat –1.5 V
Base-Emitter On Voltage
at IC= 100 mA, VCE = 5.0V VBE(on) –2.0 V
DC Current Gain
at VCE = 5.0 V, IC= 10 mA MMBTA13 5000 ––
MMBTA14 hFE 10000 ––
at VCE = 5.0 V, IC = 100 mA MMBTA13 10000 ––
MMBTA14 20000 ––
Gain-Bandwidth Product
at VCE = 5.0 V, IC= 10 mA, f = 100 MHZfT125 –MHZ
