Bipolar Transistor NPN Description: This is a silicon NPN transistor in a TO-18 type case designed primarily for amplifier and switching applications. The device features high breakdown voltage, Low leakage current, low capacity, and beta useful over an extremely wide current range. Pin Configuration: 1. Emitter 2. Base 3. Collector Maximum Ratings: Symbol Rating Collector-Base Voltage Characteristic VCBO 140 Collector-Emitter Voltage VCEO 80 Emitter Base Voltage VEBO 7 IC 1 Continuous Collector Current Total Device Dissipation -(TA = +25C), Derate Above 25C Total Device Dissipation -(TA = +25C), Derate Above 25C PD Operating Junction Temperature Range TJ Storage Temperature Range, Tstg 0.5 2.85 1.8 10.6 -65 to +200 Thermal Resistance, Junction-to-Case RthJC 97 Thermal Resistance, Junction-to-Ambient RthJA 350 TL 300 Lead Temperature (During Soldering, 1/16" from case, 60sec max) Unit V A W mW/C C C/W C www.element14.com www.farnell.com www.newark.com Page <1> 29/04/13 V1.0 Bipolar Transistor Electrical Characteristics: (TA = +25C Unless otherwise specified) Symbol Test Conditions Min. Collector-Emitter Breakdown Voltage Parameter V(BR)CEO lC = 30mA, IB = 0 80 Collector-Base Breakdown Voltage V(BR)CBO lC= 100A. IE = 0 140 Emitter-Base Breakdown Voltage V(BR)EBO IE = 100A. lC= 0 7 Collector Cut-Off Current lCBO Emitter Cut-Off Current lEBO VCB = 90V, IE = 0 VCB = 90V, IE= 0, TA = +150C Max. Unit - V 0.01 - VBE = 5V, lc = 0 10 0.01 A A ON Characteristics DC Current Gain (Note 1) hFE VCE = 10V, lC = 0.1mA 50 VCE = 10V, lC = 10mA 90 VCE = 10V, lC = 150mA 100 VCE = 10V, lC = 150mA, TA = -55C 40 VCE = 10V, lC = 500mA 50 VCE = 10V, lC = 1A 15 lC = 150mA, IB = 15mA Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) lC = 150mA, IB = 15mA lC = 500mA, IB = 50mA 300 - 0.2 - 0.5 V 1.1 Small - Signal Characteristics Current Gain-Bandwidth Product fT VCE = 10V, lC = 50mA, f = 20MHz Output Capacitance Cobo VCB = 10V, lE = 0, f = 1MHz Input Capacitance CIbo VBE = 500mV, lC = 0, f = 1MHz Small-Signal Current Gain Collector-Base Time Constant Noise Figure hfe VCE = 5V, lC = 1mA, f = 1kHz rb'Cc VCB = 10V, IE = 10mA, f = 79.8MHz NF VCE = 10V, lC- 100A. f = 1kHz, RS= 1k 100 80 - 400 12 60 400 4 MHz pF ps dB Note: 1. Pulse Test : Pulse Width %300s, Duty Cycle %2% www.element14.com www.farnell.com www.newark.com Page <2> 29/04/13 V1.0 Bipolar Transistor Pin Configuration: 1. Emitter 2. Base 3. Collector Dim A B C D E F G H J K Min. 5.24 4.52 4.31 0.4 - - - 0.91 0.71 12.7 Max. 5.84 4.97 5.33 0.53 0.76 1.27 2.97 1.17 1.21 - L 45 Dimensions : Millimetres Part Number Table Description Part Number Transistor, NPN, 1A, 80V, TO-18 2N3700 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <3> 29/04/13 V1.0